{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2015:74PI7F4GXPGZFBYT54JSIO4NKG","short_pith_number":"pith:74PI7F4G","schema_version":"1.0","canonical_sha256":"ff1e8f9786bbcd928713ef13243b8d51b88c5476ab7ddbe6371f831e8d62959c","source":{"kind":"arxiv","id":"1508.01590","version":1},"attestation_state":"computed","paper":{"title":"Interplay between O defects and SiC stacking at the SiC/SiO$_2$ interface","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Christopher James Kirkham, Tomoya Ono","submitted_at":"2015-08-07T02:44:09Z","abstract_excerpt":"We investigate the effect of SiC stacking on the 4H-SiC/SiO$_2$ interface, both in the presence and absence of O defects, which appear during thermal oxidation, via first principles calculations. It is known that 4H-SiC(0001) has two different surface types, depending on which of the two lattice sites, $h$ or $k$, is at the surface [K. Arima \\textit{et al}., Appl. Phys. Lett. \\textbf{90}, 202106 (2007)]. We find interlayer states along the conduction band edge of SiC, whose location changes depending on the interface type, and thus too the effect of defects. When $h$ sites are directly at the "},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1508.01590","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2015-08-07T02:44:09Z","cross_cats_sorted":[],"title_canon_sha256":"26abdcdb38edddd1d4b721d0953c93f3d41e388ab46963dc3dd904dcbd0c0edc","abstract_canon_sha256":"7b415abfebe13d541817930a3d767c56e8969977631f52ca8d14db06a75fa955"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T01:35:39.305124Z","signature_b64":"g2lr+ruOj6/VA+Z76EThPMwRrrWLDyBVQBSX7sqlYsNe6hu4BA2ImGO+DrtJty9jSwnXf6EqlTs3csJTmdsDCA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"ff1e8f9786bbcd928713ef13243b8d51b88c5476ab7ddbe6371f831e8d62959c","last_reissued_at":"2026-05-18T01:35:39.304200Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T01:35:39.304200Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Interplay between O defects and SiC stacking at the SiC/SiO$_2$ interface","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Christopher James Kirkham, Tomoya Ono","submitted_at":"2015-08-07T02:44:09Z","abstract_excerpt":"We investigate the effect of SiC stacking on the 4H-SiC/SiO$_2$ interface, both in the presence and absence of O defects, which appear during thermal oxidation, via first principles calculations. It is known that 4H-SiC(0001) has two different surface types, depending on which of the two lattice sites, $h$ or $k$, is at the surface [K. Arima \\textit{et al}., Appl. Phys. Lett. \\textbf{90}, 202106 (2007)]. We find interlayer states along the conduction band edge of SiC, whose location changes depending on the interface type, and thus too the effect of defects. When $h$ sites are directly at the "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1508.01590","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1508.01590","created_at":"2026-05-18T01:35:39.304380+00:00"},{"alias_kind":"arxiv_version","alias_value":"1508.01590v1","created_at":"2026-05-18T01:35:39.304380+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1508.01590","created_at":"2026-05-18T01:35:39.304380+00:00"},{"alias_kind":"pith_short_12","alias_value":"74PI7F4GXPGZ","created_at":"2026-05-18T12:29:07.941421+00:00"},{"alias_kind":"pith_short_16","alias_value":"74PI7F4GXPGZFBYT","created_at":"2026-05-18T12:29:07.941421+00:00"},{"alias_kind":"pith_short_8","alias_value":"74PI7F4G","created_at":"2026-05-18T12:29:07.941421+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/74PI7F4GXPGZFBYT54JSIO4NKG","json":"https://pith.science/pith/74PI7F4GXPGZFBYT54JSIO4NKG.json","graph_json":"https://pith.science/api/pith-number/74PI7F4GXPGZFBYT54JSIO4NKG/graph.json","events_json":"https://pith.science/api/pith-number/74PI7F4GXPGZFBYT54JSIO4NKG/events.json","paper":"https://pith.science/paper/74PI7F4G"},"agent_actions":{"view_html":"https://pith.science/pith/74PI7F4GXPGZFBYT54JSIO4NKG","download_json":"https://pith.science/pith/74PI7F4GXPGZFBYT54JSIO4NKG.json","view_paper":"https://pith.science/paper/74PI7F4G","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1508.01590&json=true","fetch_graph":"https://pith.science/api/pith-number/74PI7F4GXPGZFBYT54JSIO4NKG/graph.json","fetch_events":"https://pith.science/api/pith-number/74PI7F4GXPGZFBYT54JSIO4NKG/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/74PI7F4GXPGZFBYT54JSIO4NKG/action/timestamp_anchor","attest_storage":"https://pith.science/pith/74PI7F4GXPGZFBYT54JSIO4NKG/action/storage_attestation","attest_author":"https://pith.science/pith/74PI7F4GXPGZFBYT54JSIO4NKG/action/author_attestation","sign_citation":"https://pith.science/pith/74PI7F4GXPGZFBYT54JSIO4NKG/action/citation_signature","submit_replication":"https://pith.science/pith/74PI7F4GXPGZFBYT54JSIO4NKG/action/replication_record"}},"created_at":"2026-05-18T01:35:39.304380+00:00","updated_at":"2026-05-18T01:35:39.304380+00:00"}