{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2013:7J6WSWMKRONU7PBWBORUSFHMPV","short_pith_number":"pith:7J6WSWMK","schema_version":"1.0","canonical_sha256":"fa7d69598a8b9b4fbc360ba34914ec7d6cb95bacd832d7230fda02408ff3c5ea","source":{"kind":"arxiv","id":"1311.1628","version":1},"attestation_state":"computed","paper":{"title":"Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["hep-ex"],"primary_cat":"physics.ins-det","authors_text":"(2) Fondazione Bruno Kessler, (3) Universit\\`a di Trieste, 4), (4) Dipartimento di Fisica E. Fermi, (5) Section de Physique (DPNC), A. Bagolini (2), A. La Rosa (5), Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (TN), Dipartimento di Fisica, France, G. Calderini (1, Gen\\`eve, G. Giacomini (2), G. Marchori (1), INFN, INFN Sez. di Pisa, Italy, J. Chauveau (1), L. Bosisio (3), M. Bomben (1), M. Boscardin (2), N. Zorzi (2) ((1) Laboratoire de Physique Nucleaire et de Hautes \\'Energies (LPNHE) Paris, Pisa, Switzerland), Trieste, Universit\\`a di Pisa, Universit\\'e de Gen\\`eve","submitted_at":"2013-11-07T10:39:40Z","abstract_excerpt":"In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulatio"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1311.1628","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.ins-det","submitted_at":"2013-11-07T10:39:40Z","cross_cats_sorted":["hep-ex"],"title_canon_sha256":"62a8db4723b92bef0ea5fb34a03e4be588bbae2667e0b5fdd86c716c60d68012","abstract_canon_sha256":"fc82f4154e77c8a7695db9c25f825cf0f2843cef27c529c4cb40e3f1d059b7e7"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T01:46:33.345019Z","signature_b64":"SvAgKCcqtKE8xkBHuCMijYsTVSj5SP0QtNY7rHgYB8p+AxumcP5mjYzF9c0xNVIg9byhHKrTOqNwkCt9nncAAw==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"fa7d69598a8b9b4fbc360ba34914ec7d6cb95bacd832d7230fda02408ff3c5ea","last_reissued_at":"2026-05-18T01:46:33.344499Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T01:46:33.344499Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["hep-ex"],"primary_cat":"physics.ins-det","authors_text":"(2) Fondazione Bruno Kessler, (3) Universit\\`a di Trieste, 4), (4) Dipartimento di Fisica E. Fermi, (5) Section de Physique (DPNC), A. Bagolini (2), A. La Rosa (5), Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (TN), Dipartimento di Fisica, France, G. Calderini (1, Gen\\`eve, G. Giacomini (2), G. Marchori (1), INFN, INFN Sez. di Pisa, Italy, J. Chauveau (1), L. Bosisio (3), M. Bomben (1), M. Boscardin (2), N. Zorzi (2) ((1) Laboratoire de Physique Nucleaire et de Hautes \\'Energies (LPNHE) Paris, Pisa, Switzerland), Trieste, Universit\\`a di Pisa, Universit\\'e de Gen\\`eve","submitted_at":"2013-11-07T10:39:40Z","abstract_excerpt":"In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulatio"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1311.1628","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1311.1628","created_at":"2026-05-18T01:46:33.344579+00:00"},{"alias_kind":"arxiv_version","alias_value":"1311.1628v1","created_at":"2026-05-18T01:46:33.344579+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1311.1628","created_at":"2026-05-18T01:46:33.344579+00:00"},{"alias_kind":"pith_short_12","alias_value":"7J6WSWMKRONU","created_at":"2026-05-18T12:27:36.564083+00:00"},{"alias_kind":"pith_short_16","alias_value":"7J6WSWMKRONU7PBW","created_at":"2026-05-18T12:27:36.564083+00:00"},{"alias_kind":"pith_short_8","alias_value":"7J6WSWMK","created_at":"2026-05-18T12:27:36.564083+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/7J6WSWMKRONU7PBWBORUSFHMPV","json":"https://pith.science/pith/7J6WSWMKRONU7PBWBORUSFHMPV.json","graph_json":"https://pith.science/api/pith-number/7J6WSWMKRONU7PBWBORUSFHMPV/graph.json","events_json":"https://pith.science/api/pith-number/7J6WSWMKRONU7PBWBORUSFHMPV/events.json","paper":"https://pith.science/paper/7J6WSWMK"},"agent_actions":{"view_html":"https://pith.science/pith/7J6WSWMKRONU7PBWBORUSFHMPV","download_json":"https://pith.science/pith/7J6WSWMKRONU7PBWBORUSFHMPV.json","view_paper":"https://pith.science/paper/7J6WSWMK","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1311.1628&json=true","fetch_graph":"https://pith.science/api/pith-number/7J6WSWMKRONU7PBWBORUSFHMPV/graph.json","fetch_events":"https://pith.science/api/pith-number/7J6WSWMKRONU7PBWBORUSFHMPV/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/7J6WSWMKRONU7PBWBORUSFHMPV/action/timestamp_anchor","attest_storage":"https://pith.science/pith/7J6WSWMKRONU7PBWBORUSFHMPV/action/storage_attestation","attest_author":"https://pith.science/pith/7J6WSWMKRONU7PBWBORUSFHMPV/action/author_attestation","sign_citation":"https://pith.science/pith/7J6WSWMKRONU7PBWBORUSFHMPV/action/citation_signature","submit_replication":"https://pith.science/pith/7J6WSWMKRONU7PBWBORUSFHMPV/action/replication_record"}},"created_at":"2026-05-18T01:46:33.344579+00:00","updated_at":"2026-05-18T01:46:33.344579+00:00"}