{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2024:BKB24QGRPXYZJ75724QBXQNSMD","short_pith_number":"pith:BKB24QGR","schema_version":"1.0","canonical_sha256":"0a83ae40d17df194ffbfd7201bc1b260f1841bbb5556e53fe2b03a829016fecb","source":{"kind":"arxiv","id":"2404.19716","version":2},"attestation_state":"computed","paper":{"title":"Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"physics.app-ph","authors_text":"Antoni Wellisz, Christina Wicker, Connor P Horn, Cyrus Zeledon, David D Awschalom, F Joseph Heremans, Pavani Vamsi Krishna Nittala, Supratik Guha","submitted_at":"2024-04-30T17:06:42Z","abstract_excerpt":"We detail several scientific and engineering innovations which enable the controlled spalling of 10 - 50 micron thick films of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an ideal candidate for high-temperature, high-voltage power electronic devices. Moreover, 4H-SiC has been shown to be an excellent host of solid-state atomic defect qubits for quantum computing and quantum networking. Because 4H-SiC single crystal substrates are expensive (due to long growth times and limited yield), tech"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2404.19716","kind":"arxiv","version":2},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2024-04-30T17:06:42Z","cross_cats_sorted":["cond-mat.mtrl-sci"],"title_canon_sha256":"3e236b2b1ec92506c27a045a59f700a05abf673c6c2b5ea3fcc66f02de95ac2e","abstract_canon_sha256":"92c589f9f3572c9a47470a8a4021249e422bdd4e5ee08b3459c45aca9e99b964"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T09:37:52.942131Z","signature_b64":"/krNcqKc00apDuu3CzQHJJKfgz1F5VL0JYt6Uoz/liqCfQnL7/Z+4tqWyyKNxxOQz476vf/KWP2+YNr9L9yeCQ==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"0a83ae40d17df194ffbfd7201bc1b260f1841bbb5556e53fe2b03a829016fecb","last_reissued_at":"2026-07-05T09:37:52.941669Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T09:37:52.941669Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"physics.app-ph","authors_text":"Antoni Wellisz, Christina Wicker, Connor P Horn, Cyrus Zeledon, David D Awschalom, F Joseph Heremans, Pavani Vamsi Krishna Nittala, Supratik Guha","submitted_at":"2024-04-30T17:06:42Z","abstract_excerpt":"We detail several scientific and engineering innovations which enable the controlled spalling of 10 - 50 micron thick films of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an ideal candidate for high-temperature, high-voltage power electronic devices. Moreover, 4H-SiC has been shown to be an excellent host of solid-state atomic defect qubits for quantum computing and quantum networking. Because 4H-SiC single crystal substrates are expensive (due to long growth times and limited yield), tech"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2404.19716","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2404.19716/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2404.19716","created_at":"2026-07-05T09:37:52.941725+00:00"},{"alias_kind":"arxiv_version","alias_value":"2404.19716v2","created_at":"2026-07-05T09:37:52.941725+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2404.19716","created_at":"2026-07-05T09:37:52.941725+00:00"},{"alias_kind":"pith_short_12","alias_value":"BKB24QGRPXYZ","created_at":"2026-07-05T09:37:52.941725+00:00"},{"alias_kind":"pith_short_16","alias_value":"BKB24QGRPXYZJ757","created_at":"2026-07-05T09:37:52.941725+00:00"},{"alias_kind":"pith_short_8","alias_value":"BKB24QGR","created_at":"2026-07-05T09:37:52.941725+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/BKB24QGRPXYZJ75724QBXQNSMD","json":"https://pith.science/pith/BKB24QGRPXYZJ75724QBXQNSMD.json","graph_json":"https://pith.science/api/pith-number/BKB24QGRPXYZJ75724QBXQNSMD/graph.json","events_json":"https://pith.science/api/pith-number/BKB24QGRPXYZJ75724QBXQNSMD/events.json","paper":"https://pith.science/paper/BKB24QGR"},"agent_actions":{"view_html":"https://pith.science/pith/BKB24QGRPXYZJ75724QBXQNSMD","download_json":"https://pith.science/pith/BKB24QGRPXYZJ75724QBXQNSMD.json","view_paper":"https://pith.science/paper/BKB24QGR","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2404.19716&json=true","fetch_graph":"https://pith.science/api/pith-number/BKB24QGRPXYZJ75724QBXQNSMD/graph.json","fetch_events":"https://pith.science/api/pith-number/BKB24QGRPXYZJ75724QBXQNSMD/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/BKB24QGRPXYZJ75724QBXQNSMD/action/timestamp_anchor","attest_storage":"https://pith.science/pith/BKB24QGRPXYZJ75724QBXQNSMD/action/storage_attestation","attest_author":"https://pith.science/pith/BKB24QGRPXYZJ75724QBXQNSMD/action/author_attestation","sign_citation":"https://pith.science/pith/BKB24QGRPXYZJ75724QBXQNSMD/action/citation_signature","submit_replication":"https://pith.science/pith/BKB24QGRPXYZJ75724QBXQNSMD/action/replication_record"}},"created_at":"2026-07-05T09:37:52.941725+00:00","updated_at":"2026-07-05T09:37:52.941725+00:00"}