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At ambient pressure and high temperatures, CaMn$_{2}$Bi$_{2}$ behaves as a single-band semimetal hosting N\\'{e}el order at $T_{N}=150$~K. At low temperatures, multi-band behavior emerges along with an activated behavior typical of degenerate semiconductors. The activation gap is estimated to be $\\Delta \\sim 20$~K. Applied pressure not only favors the antiferromagnetic order at a rate of 0.40(2)~K/kbar, but also enhances the activation gap at $20$~kbar by about $70$~\\%. This gap enhancement"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1907.09984","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.str-el","submitted_at":"2019-07-23T16:30:14Z","cross_cats_sorted":[],"title_canon_sha256":"5cd5cfd118a3ab3f70b3638d88c73178a941e4590eaab6cf8b04a0123946985b","abstract_canon_sha256":"3556bd891c02e8b648c57010ab4c7375e09da1e5052ba6a6fa899db816bed7e3"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-17T23:39:49.495833Z","signature_b64":"ydQ1cp82QYz6l3u+h9ynjDjyYJ/wfkXewFd8xJcVT0BTqw1LvoW+QprjddAy6AG3YeR9muTnkmXTWG4H6yNpCg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"1e1cda9f654cc4b26dea7ba1075cfe1a8b07297da53b522f3e878d5b0549ec5b","last_reissued_at":"2026-05-17T23:39:49.495135Z","signature_status":"signed_v1","first_computed_at":"2026-05-17T23:39:49.495135Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Putative hybridization gap in CaMn$_{2}$Bi$_{2}$ under applied pressure","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.str-el","authors_text":"J. D. Thompson, J.-X. Zhu, M. M. Piva, P. F. S. Rosa, P. G. Pagliuso, S. M. Thomas, Z. Fisk","submitted_at":"2019-07-23T16:30:14Z","abstract_excerpt":"We report electrical transport measurements on CaMn$_{2}$Bi$_{2}$ single crystals under applied pressure. At ambient pressure and high temperatures, CaMn$_{2}$Bi$_{2}$ behaves as a single-band semimetal hosting N\\'{e}el order at $T_{N}=150$~K. At low temperatures, multi-band behavior emerges along with an activated behavior typical of degenerate semiconductors. The activation gap is estimated to be $\\Delta \\sim 20$~K. Applied pressure not only favors the antiferromagnetic order at a rate of 0.40(2)~K/kbar, but also enhances the activation gap at $20$~kbar by about $70$~\\%. 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