{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2026:E3SSSKQRXUOPH6M6PAFFCMLXYO","short_pith_number":"pith:E3SSSKQR","schema_version":"1.0","canonical_sha256":"26e5292a11bd1cf3f99e780a513177c3ae59f0af6db4a67288727b0a5a10a3b5","source":{"kind":"arxiv","id":"2608.04418","version":1},"attestation_state":"computed","paper":{"title":"Monolithic integration of optically anisotropic GeSe-based films on GaAs by templated solid-phase epitaxy","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Aaron M. Lindenberg, Ashlee M. Garc\\'ia, Autumn Y. Lee, Kelly Xiao, Kira J. Martin, Kunal Mukherjee, Pooja D. Reddy, Pranav Mahaadev, Tri Nguyen","submitted_at":"2026-08-05T03:55:01Z","abstract_excerpt":"Layered IV-VI semiconductors such as GeSe exhibit strong in-plane optical anisotropy, making them promising candidates for polarization-sensitive photonic devices. However, realizing these properties in scalable platforms requires heteroepitaxial integration on technologically relevant substrates like GaAs. Direct growth of GeSe is complicated by its glass formation at low temperatures and high vapor pressure at elevated temperatures. To overcome this, we develop a method for ex-situ solid-phase epitaxy utilizing a SnSe buffer and offcut GaAs substrate to enable single-orientation crystalline "},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2608.04418","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2026-08-05T03:55:01Z","cross_cats_sorted":[],"title_canon_sha256":"bb4c20cd5cd9ced66d69866b6bb03cf84ce3a6473f72ec6f64afb797a6be8857","abstract_canon_sha256":"571af2d0294ffcba84f948078b476cf14ca4cdbaf24db835e0eb7c0ed025df2d"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-08-06T01:35:22.898058Z","signature_b64":"6RfKFtMLqTdkMuKlg6z9G/DnMeXCaPaXnbHlO1pYDsbwBQP/Yq9tbFWwHox8wzIUBSXO6AHRxD2AC98NO8I5CA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"26e5292a11bd1cf3f99e780a513177c3ae59f0af6db4a67288727b0a5a10a3b5","last_reissued_at":"2026-08-06T01:35:22.896579Z","signature_status":"signed_v1","first_computed_at":"2026-08-06T01:35:22.896579Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Monolithic integration of optically anisotropic GeSe-based films on GaAs by templated solid-phase epitaxy","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Aaron M. Lindenberg, Ashlee M. Garc\\'ia, Autumn Y. Lee, Kelly Xiao, Kira J. Martin, Kunal Mukherjee, Pooja D. Reddy, Pranav Mahaadev, Tri Nguyen","submitted_at":"2026-08-05T03:55:01Z","abstract_excerpt":"Layered IV-VI semiconductors such as GeSe exhibit strong in-plane optical anisotropy, making them promising candidates for polarization-sensitive photonic devices. However, realizing these properties in scalable platforms requires heteroepitaxial integration on technologically relevant substrates like GaAs. Direct growth of GeSe is complicated by its glass formation at low temperatures and high vapor pressure at elevated temperatures. To overcome this, we develop a method for ex-situ solid-phase epitaxy utilizing a SnSe buffer and offcut GaAs substrate to enable single-orientation crystalline "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2608.04418","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2608.04418/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2608.04418","created_at":"2026-08-06T01:35:22.898444+00:00"},{"alias_kind":"arxiv_version","alias_value":"2608.04418v1","created_at":"2026-08-06T01:35:22.898444+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2608.04418","created_at":"2026-08-06T01:35:22.898444+00:00"},{"alias_kind":"pith_short_12","alias_value":"E3SSSKQRXUOP","created_at":"2026-08-06T01:35:22.898444+00:00"},{"alias_kind":"pith_short_16","alias_value":"E3SSSKQRXUOPH6M6","created_at":"2026-08-06T01:35:22.898444+00:00"},{"alias_kind":"pith_short_8","alias_value":"E3SSSKQR","created_at":"2026-08-06T01:35:22.898444+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/E3SSSKQRXUOPH6M6PAFFCMLXYO","json":"https://pith.science/pith/E3SSSKQRXUOPH6M6PAFFCMLXYO.json","graph_json":"https://pith.science/api/pith-number/E3SSSKQRXUOPH6M6PAFFCMLXYO/graph.json","events_json":"https://pith.science/api/pith-number/E3SSSKQRXUOPH6M6PAFFCMLXYO/events.json","paper":"https://pith.science/paper/E3SSSKQR"},"agent_actions":{"view_html":"https://pith.science/pith/E3SSSKQRXUOPH6M6PAFFCMLXYO","download_json":"https://pith.science/pith/E3SSSKQRXUOPH6M6PAFFCMLXYO.json","view_paper":"https://pith.science/paper/E3SSSKQR","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2608.04418&json=true","fetch_graph":"https://pith.science/api/pith-number/E3SSSKQRXUOPH6M6PAFFCMLXYO/graph.json","fetch_events":"https://pith.science/api/pith-number/E3SSSKQRXUOPH6M6PAFFCMLXYO/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/E3SSSKQRXUOPH6M6PAFFCMLXYO/action/timestamp_anchor","attest_storage":"https://pith.science/pith/E3SSSKQRXUOPH6M6PAFFCMLXYO/action/storage_attestation","attest_author":"https://pith.science/pith/E3SSSKQRXUOPH6M6PAFFCMLXYO/action/author_attestation","sign_citation":"https://pith.science/pith/E3SSSKQRXUOPH6M6PAFFCMLXYO/action/citation_signature","submit_replication":"https://pith.science/pith/E3SSSKQRXUOPH6M6PAFFCMLXYO/action/replication_record"}},"created_at":"2026-08-06T01:35:22.898444+00:00","updated_at":"2026-08-06T01:35:22.898444+00:00"}