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To be competitive with conventional spin-transfer-torque (STT) switching, a pure spin current source with large spin Hall angle (${\\theta}_{SH}$ > 1) and high electrical conductivity (${\\sigma} > 10^5 {\\Omega}^{-1}m^{-1}$) is required. Here, we demonstrate such a pure spin current source: BiSb thin films with ${\\sigma}{\\sim}2.5*10^5 {\\Omega}^{-1}m^{-1}$, ${\\theta}_{SH}{\\sim}52$, and spin Hall co"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1709.07684","kind":"arxiv","version":2},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2017-09-22T10:40:20Z","cross_cats_sorted":[],"title_canon_sha256":"aac2ef88373cf91d7e12803daf7e68d14db602510b4ea9ac532c683215e45875","abstract_canon_sha256":"7218914687f0d3f1518fb88235bacb156987030653a9fe4daa47e44ad47904ae"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T00:05:23.993459Z","signature_b64":"gIJZycUyqQ2bSmZNbODwy8egS/aLujgQL2GFd3jo25QjRLc3X6D5ERyiFimx6AJceR3++dAkaOLufvolPjIfBg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"235b913b0274af3c85be3904c984cfdd8f9a0212dc1cc42a31086d62d06e1e81","last_reissued_at":"2026-05-18T00:05:23.992842Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T00:05:23.992842Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Nguyen Huynh Duy Khang, Pham Nam Hai, Yugo Ueda","submitted_at":"2017-09-22T10:40:20Z","abstract_excerpt":"Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavy metals and topological insulators (TIs) has great potential for ultra-low power magnetoresistive random-access memory (MRAM). 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