{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2024:ENP7BTBQETR5NOK66KNUJSMR3U","short_pith_number":"pith:ENP7BTBQ","schema_version":"1.0","canonical_sha256":"235ff0cc3024e3d6b95ef29b44c991dd1dbe41d35e960b84acb71ee471e4d9a1","source":{"kind":"arxiv","id":"2411.16652","version":2},"attestation_state":"computed","paper":{"title":"Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\\deg}C","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"David C. Moore, Deep Jariwala, Dhiren K. Pradhan, Nicholas R. Glavin, Roy H. Olsson III, Sizhe Ma, Spencer Ware, W. Joshua Kennedy, Xingyu Du, Yubo Wang, Yunfei He, Zekun Hu","submitted_at":"2024-11-25T18:37:16Z","abstract_excerpt":"Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC metal-ferroelectric-semiconductor capacitors for high-temperature non-volatile memory applications. Our 30-nm thick ferroelectric Al0.68Sc0.32N film grown on SiC exhibits stable and robust ferroelectric switching up to 1000{\\deg}C. The coercive field decreases linearly from -6.4/+11.9 MV cm-1 at room temperature to -3.1/+7.8 MV cm-1 at 800{\\deg}C, further reducing to -2.5 MV cm-1"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2411.16652","kind":"arxiv","version":2},"metadata":{"license":"http://creativecommons.org/licenses/by/4.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2024-11-25T18:37:16Z","cross_cats_sorted":[],"title_canon_sha256":"9dbc12b2a44415cf040c623c16ec8c514643857a0271466a365862f99b1aa0a1","abstract_canon_sha256":"4f29d43cd5628f11bccafedf746d6ec4689bcdbe59e480e29e493535478d003e"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T10:34:41.371104Z","signature_b64":"3sHBqeL7ymtPcH7dXAlqXCjIqhFRASLU11QiMmVlJgyPH2imUhK/q3zm0DbD8YIj8Vo1PW2V0HAZdAp6ExygAg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"235ff0cc3024e3d6b95ef29b44c991dd1dbe41d35e960b84acb71ee471e4d9a1","last_reissued_at":"2026-07-05T10:34:41.370554Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T10:34:41.370554Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\\deg}C","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"David C. Moore, Deep Jariwala, Dhiren K. Pradhan, Nicholas R. Glavin, Roy H. Olsson III, Sizhe Ma, Spencer Ware, W. Joshua Kennedy, Xingyu Du, Yubo Wang, Yunfei He, Zekun Hu","submitted_at":"2024-11-25T18:37:16Z","abstract_excerpt":"Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC metal-ferroelectric-semiconductor capacitors for high-temperature non-volatile memory applications. Our 30-nm thick ferroelectric Al0.68Sc0.32N film grown on SiC exhibits stable and robust ferroelectric switching up to 1000{\\deg}C. The coercive field decreases linearly from -6.4/+11.9 MV cm-1 at room temperature to -3.1/+7.8 MV cm-1 at 800{\\deg}C, further reducing to -2.5 MV cm-1"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2411.16652","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2411.16652/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2411.16652","created_at":"2026-07-05T10:34:41.370629+00:00"},{"alias_kind":"arxiv_version","alias_value":"2411.16652v2","created_at":"2026-07-05T10:34:41.370629+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2411.16652","created_at":"2026-07-05T10:34:41.370629+00:00"},{"alias_kind":"pith_short_12","alias_value":"ENP7BTBQETR5","created_at":"2026-07-05T10:34:41.370629+00:00"},{"alias_kind":"pith_short_16","alias_value":"ENP7BTBQETR5NOK6","created_at":"2026-07-05T10:34:41.370629+00:00"},{"alias_kind":"pith_short_8","alias_value":"ENP7BTBQ","created_at":"2026-07-05T10:34:41.370629+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":1,"internal_anchor_count":1,"sample":[{"citing_arxiv_id":"2501.05219","citing_title":"A Thermodynamic Theory of Proximity Ferroelectricity","ref_index":24,"is_internal_anchor":true}]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/ENP7BTBQETR5NOK66KNUJSMR3U","json":"https://pith.science/pith/ENP7BTBQETR5NOK66KNUJSMR3U.json","graph_json":"https://pith.science/api/pith-number/ENP7BTBQETR5NOK66KNUJSMR3U/graph.json","events_json":"https://pith.science/api/pith-number/ENP7BTBQETR5NOK66KNUJSMR3U/events.json","paper":"https://pith.science/paper/ENP7BTBQ"},"agent_actions":{"view_html":"https://pith.science/pith/ENP7BTBQETR5NOK66KNUJSMR3U","download_json":"https://pith.science/pith/ENP7BTBQETR5NOK66KNUJSMR3U.json","view_paper":"https://pith.science/paper/ENP7BTBQ","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2411.16652&json=true","fetch_graph":"https://pith.science/api/pith-number/ENP7BTBQETR5NOK66KNUJSMR3U/graph.json","fetch_events":"https://pith.science/api/pith-number/ENP7BTBQETR5NOK66KNUJSMR3U/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/ENP7BTBQETR5NOK66KNUJSMR3U/action/timestamp_anchor","attest_storage":"https://pith.science/pith/ENP7BTBQETR5NOK66KNUJSMR3U/action/storage_attestation","attest_author":"https://pith.science/pith/ENP7BTBQETR5NOK66KNUJSMR3U/action/author_attestation","sign_citation":"https://pith.science/pith/ENP7BTBQETR5NOK66KNUJSMR3U/action/citation_signature","submit_replication":"https://pith.science/pith/ENP7BTBQETR5NOK66KNUJSMR3U/action/replication_record"}},"created_at":"2026-07-05T10:34:41.370629+00:00","updated_at":"2026-07-05T10:34:41.370629+00:00"}