{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2011:FEVJ2FSUFXRWML73EGKTBONDN7","short_pith_number":"pith:FEVJ2FSU","schema_version":"1.0","canonical_sha256":"292a9d16542de3662ffb219530b9a36fdf84a5ba31a0f818d834f89fa9940d8b","source":{"kind":"arxiv","id":"1108.1333","version":1},"attestation_state":"computed","paper":{"title":"Atomic-Layer-Deposited Al2O3 on Bi2Te3 for Topological Insulator Field-Effect Transistors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Han Liu, Peide D. Ye","submitted_at":"2011-08-05T14:25:21Z","abstract_excerpt":"We report dual-gate modulation of topological insulator field-effect transistors (TI FETs) made on Bi2Te3 thin flakes with integration of atomic-layer-deposited (ALD) Al2O3 high-k dielectric. Atomic force microscopy study shows that ALD Al2O3 is uniformly grown on this layer-structured channel material. Electrical characterization reveals that the right selection of ALD precursors and the related surface chemistry play a critical role in device performance of Bi2Te3 based TI FETs. We realize both top-gate and bottom-gate control on these devices, and the highest modulation rate of 76.1% is ach"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1108.1333","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2011-08-05T14:25:21Z","cross_cats_sorted":["cond-mat.mes-hall"],"title_canon_sha256":"5943901c321f131013eb679e6139dc50fec37cdbecae765d54807bd112df9ea6","abstract_canon_sha256":"770de4913c50300575166471665912431ecd7d7d23abe7b277378d29a411c0c8"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T04:16:11.166522Z","signature_b64":"Dw4yS9aDLgdZy0xJ0VuEmZy7XusE5Ro8AAaLxpRuOAFJGW+1cBa3NcgEdgVqIKbngjktXKp38wd9LCfSqkWiBA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"292a9d16542de3662ffb219530b9a36fdf84a5ba31a0f818d834f89fa9940d8b","last_reissued_at":"2026-05-18T04:16:11.166014Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T04:16:11.166014Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Atomic-Layer-Deposited Al2O3 on Bi2Te3 for Topological Insulator Field-Effect Transistors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Han Liu, Peide D. Ye","submitted_at":"2011-08-05T14:25:21Z","abstract_excerpt":"We report dual-gate modulation of topological insulator field-effect transistors (TI FETs) made on Bi2Te3 thin flakes with integration of atomic-layer-deposited (ALD) Al2O3 high-k dielectric. Atomic force microscopy study shows that ALD Al2O3 is uniformly grown on this layer-structured channel material. Electrical characterization reveals that the right selection of ALD precursors and the related surface chemistry play a critical role in device performance of Bi2Te3 based TI FETs. We realize both top-gate and bottom-gate control on these devices, and the highest modulation rate of 76.1% is ach"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1108.1333","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1108.1333","created_at":"2026-05-18T04:16:11.166088+00:00"},{"alias_kind":"arxiv_version","alias_value":"1108.1333v1","created_at":"2026-05-18T04:16:11.166088+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1108.1333","created_at":"2026-05-18T04:16:11.166088+00:00"},{"alias_kind":"pith_short_12","alias_value":"FEVJ2FSUFXRW","created_at":"2026-05-18T12:26:28.662955+00:00"},{"alias_kind":"pith_short_16","alias_value":"FEVJ2FSUFXRWML73","created_at":"2026-05-18T12:26:28.662955+00:00"},{"alias_kind":"pith_short_8","alias_value":"FEVJ2FSU","created_at":"2026-05-18T12:26:28.662955+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/FEVJ2FSUFXRWML73EGKTBONDN7","json":"https://pith.science/pith/FEVJ2FSUFXRWML73EGKTBONDN7.json","graph_json":"https://pith.science/api/pith-number/FEVJ2FSUFXRWML73EGKTBONDN7/graph.json","events_json":"https://pith.science/api/pith-number/FEVJ2FSUFXRWML73EGKTBONDN7/events.json","paper":"https://pith.science/paper/FEVJ2FSU"},"agent_actions":{"view_html":"https://pith.science/pith/FEVJ2FSUFXRWML73EGKTBONDN7","download_json":"https://pith.science/pith/FEVJ2FSUFXRWML73EGKTBONDN7.json","view_paper":"https://pith.science/paper/FEVJ2FSU","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1108.1333&json=true","fetch_graph":"https://pith.science/api/pith-number/FEVJ2FSUFXRWML73EGKTBONDN7/graph.json","fetch_events":"https://pith.science/api/pith-number/FEVJ2FSUFXRWML73EGKTBONDN7/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/FEVJ2FSUFXRWML73EGKTBONDN7/action/timestamp_anchor","attest_storage":"https://pith.science/pith/FEVJ2FSUFXRWML73EGKTBONDN7/action/storage_attestation","attest_author":"https://pith.science/pith/FEVJ2FSUFXRWML73EGKTBONDN7/action/author_attestation","sign_citation":"https://pith.science/pith/FEVJ2FSUFXRWML73EGKTBONDN7/action/citation_signature","submit_replication":"https://pith.science/pith/FEVJ2FSUFXRWML73EGKTBONDN7/action/replication_record"}},"created_at":"2026-05-18T04:16:11.166088+00:00","updated_at":"2026-05-18T04:16:11.166088+00:00"}