films are proposed as temperature sensors of monolithic uncooled microbolometer IR focal plane arrays. Structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as multi-phase compound composed by 20 to 40% of Ni3Si, 30 to 60% of Ni2Si and 10 to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from ~100 "},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1301.7010","kind":"arxiv","version":3},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2013-01-29T18:19:17Z","cross_cats_sorted":["physics.ins-det","physics.optics"],"title_canon_sha256":"10d6e3344118e64fa1f521212ade86e135279b7ffba82d009d2eb3c24acb83a3","abstract_canon_sha256":"9c8c21133ee9f7384b9ad4f3ac0667c0a5aebb697362931dcaca580b567e7146"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T03:27:32.080051Z","signature_b64":"S+NULHYfavuXttCvBeLIbcaZPr2GrT/tsryYkd7gEGpYMyd1+faTpJ/POfttbaa3jlHPr4p74u/KtXN++pb1Cw==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"2b60e592abe42d0d27d0b4e82d77034773d67e2f8f4c21719cca8c26570622db","last_reissued_at":"2026-05-18T03:27:32.079373Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T03:27:32.079373Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Metal silicide/poly-Si Schottky diodes for uncooled microbolometers","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["physics.ins-det","physics.optics"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"K. V. Chizh, M. S. Storozhevykh, V. A. Chapnin, V. A. Yuryev, V. P. Kalinushkin, V. Ya. Resnik","submitted_at":"2013-01-29T18:19:17Z","abstract_excerpt":"Nickel silicide Schottky diodes formed on polycrystalline Si
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