{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2015:FPQ5ULPQCQD5SV2JCWR6Z45NWK","short_pith_number":"pith:FPQ5ULPQ","schema_version":"1.0","canonical_sha256":"2be1da2df01407d9574915a3ecf3adb2b0748b49535b6419ac2dd54f72b2aa69","source":{"kind":"arxiv","id":"1505.05196","version":1},"attestation_state":"computed","paper":{"title":"Layer-Transferred MoS2/GaN PN Diodes","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Aaron Arehart, Choong Hee Lee, Edwin W. Lee II, Lu Ma, Pran K. Paul, Siddharth Rajan, Sriram Krishnamoorthy, William D. McCulloch, Yiying Wu","submitted_at":"2015-05-19T21:37:30Z","abstract_excerpt":"Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2 grown by chemical vapor deposition (CVD) on hexagonal sapphire substrates. The processed devices were transferred onto GaN/sapphire substrates, and the transferred films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). On-axis XRD spectra and surface topology obtained from AFM scans were consistent with previously grown high-quali"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1505.05196","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2015-05-19T21:37:30Z","cross_cats_sorted":[],"title_canon_sha256":"bc7dffabdcf3080482849907348cfedd9ae870ff3a568976798609c1af60e5c9","abstract_canon_sha256":"298a65d0baaeae11abf3340b946f17bd967707d4b585a50d6cc6ba71e7bf01d7"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T01:31:38.979418Z","signature_b64":"/xG59geZXvQo4gL8QD/oHjAARYQQE+jg1Tgx74r6yyJXPM15+qJIcWUUrky8lIjJt4ZSWCSBYKXVwEvNEHVUBg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"2be1da2df01407d9574915a3ecf3adb2b0748b49535b6419ac2dd54f72b2aa69","last_reissued_at":"2026-05-18T01:31:38.978908Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T01:31:38.978908Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Layer-Transferred MoS2/GaN PN Diodes","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Aaron Arehart, Choong Hee Lee, Edwin W. Lee II, Lu Ma, Pran K. Paul, Siddharth Rajan, Sriram Krishnamoorthy, William D. McCulloch, Yiying Wu","submitted_at":"2015-05-19T21:37:30Z","abstract_excerpt":"Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2 grown by chemical vapor deposition (CVD) on hexagonal sapphire substrates. The processed devices were transferred onto GaN/sapphire substrates, and the transferred films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). On-axis XRD spectra and surface topology obtained from AFM scans were consistent with previously grown high-quali"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1505.05196","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1505.05196","created_at":"2026-05-18T01:31:38.978996+00:00"},{"alias_kind":"arxiv_version","alias_value":"1505.05196v1","created_at":"2026-05-18T01:31:38.978996+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1505.05196","created_at":"2026-05-18T01:31:38.978996+00:00"},{"alias_kind":"pith_short_12","alias_value":"FPQ5ULPQCQD5","created_at":"2026-05-18T12:29:19.899920+00:00"},{"alias_kind":"pith_short_16","alias_value":"FPQ5ULPQCQD5SV2J","created_at":"2026-05-18T12:29:19.899920+00:00"},{"alias_kind":"pith_short_8","alias_value":"FPQ5ULPQ","created_at":"2026-05-18T12:29:19.899920+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/FPQ5ULPQCQD5SV2JCWR6Z45NWK","json":"https://pith.science/pith/FPQ5ULPQCQD5SV2JCWR6Z45NWK.json","graph_json":"https://pith.science/api/pith-number/FPQ5ULPQCQD5SV2JCWR6Z45NWK/graph.json","events_json":"https://pith.science/api/pith-number/FPQ5ULPQCQD5SV2JCWR6Z45NWK/events.json","paper":"https://pith.science/paper/FPQ5ULPQ"},"agent_actions":{"view_html":"https://pith.science/pith/FPQ5ULPQCQD5SV2JCWR6Z45NWK","download_json":"https://pith.science/pith/FPQ5ULPQCQD5SV2JCWR6Z45NWK.json","view_paper":"https://pith.science/paper/FPQ5ULPQ","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1505.05196&json=true","fetch_graph":"https://pith.science/api/pith-number/FPQ5ULPQCQD5SV2JCWR6Z45NWK/graph.json","fetch_events":"https://pith.science/api/pith-number/FPQ5ULPQCQD5SV2JCWR6Z45NWK/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/FPQ5ULPQCQD5SV2JCWR6Z45NWK/action/timestamp_anchor","attest_storage":"https://pith.science/pith/FPQ5ULPQCQD5SV2JCWR6Z45NWK/action/storage_attestation","attest_author":"https://pith.science/pith/FPQ5ULPQCQD5SV2JCWR6Z45NWK/action/author_attestation","sign_citation":"https://pith.science/pith/FPQ5ULPQCQD5SV2JCWR6Z45NWK/action/citation_signature","submit_replication":"https://pith.science/pith/FPQ5ULPQCQD5SV2JCWR6Z45NWK/action/replication_record"}},"created_at":"2026-05-18T01:31:38.978996+00:00","updated_at":"2026-05-18T01:31:38.978996+00:00"}