{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2018:FTA4GCW74WMWNTQVSW6GMAUCP2","short_pith_number":"pith:FTA4GCW7","schema_version":"1.0","canonical_sha256":"2cc1c30adfe59966ce1595bc6602827e84d02195532f897df9f01d656461e9f6","source":{"kind":"arxiv","id":"1809.10479","version":1},"attestation_state":"computed","paper":{"title":"p-GaAs nanowire MESFETs with near-thermal limit gating","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A.P. Micolich, A.R. Ullah, F. Meyer, J.G. Gluschke, J. Nygard, P. Caroff, P. Krogstrup, S. Naureen","submitted_at":"2018-09-27T12:16:33Z","abstract_excerpt":"Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire metal-semiconductor field-effect transistor (MESFET) that eliminates the need for a gate insulator by exploiting the Schottky barrier at the metal-GaAs interface. Our device beats the best-performing p-GaSb nanowire metal-oxide-semiconductor field effect transistor (MOSFET), giving a typical sub-threshold swing of 62 mV/dec, within 4% of the thermal limit, on-off ra"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1809.10479","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mes-hall","submitted_at":"2018-09-27T12:16:33Z","cross_cats_sorted":[],"title_canon_sha256":"e9aecb390689d8f7ab45f86a9d6c1e49fe481fb04a5f9815f2ad10a52f9d90d9","abstract_canon_sha256":"605e1b860aa879ccb3e9b6db2c5fe490e9faacb2cb4592fd49359b9695e1fb25"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T00:04:38.275906Z","signature_b64":"t2v75DmGa/ELYrtOsQ5wSoygu34o+3sxbgF5CvbdeFKEnySHgGPGLtbvIhTSQn+ZJwsOqxk2FDZnq0G53a9gDQ==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"2cc1c30adfe59966ce1595bc6602827e84d02195532f897df9f01d656461e9f6","last_reissued_at":"2026-05-18T00:04:38.275480Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T00:04:38.275480Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"p-GaAs nanowire MESFETs with near-thermal limit gating","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A.P. Micolich, A.R. Ullah, F. Meyer, J.G. Gluschke, J. Nygard, P. Caroff, P. Krogstrup, S. Naureen","submitted_at":"2018-09-27T12:16:33Z","abstract_excerpt":"Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire metal-semiconductor field-effect transistor (MESFET) that eliminates the need for a gate insulator by exploiting the Schottky barrier at the metal-GaAs interface. Our device beats the best-performing p-GaSb nanowire metal-oxide-semiconductor field effect transistor (MOSFET), giving a typical sub-threshold swing of 62 mV/dec, within 4% of the thermal limit, on-off ra"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1809.10479","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1809.10479","created_at":"2026-05-18T00:04:38.275540+00:00"},{"alias_kind":"arxiv_version","alias_value":"1809.10479v1","created_at":"2026-05-18T00:04:38.275540+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1809.10479","created_at":"2026-05-18T00:04:38.275540+00:00"},{"alias_kind":"pith_short_12","alias_value":"FTA4GCW74WMW","created_at":"2026-05-18T12:32:25.280505+00:00"},{"alias_kind":"pith_short_16","alias_value":"FTA4GCW74WMWNTQV","created_at":"2026-05-18T12:32:25.280505+00:00"},{"alias_kind":"pith_short_8","alias_value":"FTA4GCW7","created_at":"2026-05-18T12:32:25.280505+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/FTA4GCW74WMWNTQVSW6GMAUCP2","json":"https://pith.science/pith/FTA4GCW74WMWNTQVSW6GMAUCP2.json","graph_json":"https://pith.science/api/pith-number/FTA4GCW74WMWNTQVSW6GMAUCP2/graph.json","events_json":"https://pith.science/api/pith-number/FTA4GCW74WMWNTQVSW6GMAUCP2/events.json","paper":"https://pith.science/paper/FTA4GCW7"},"agent_actions":{"view_html":"https://pith.science/pith/FTA4GCW74WMWNTQVSW6GMAUCP2","download_json":"https://pith.science/pith/FTA4GCW74WMWNTQVSW6GMAUCP2.json","view_paper":"https://pith.science/paper/FTA4GCW7","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1809.10479&json=true","fetch_graph":"https://pith.science/api/pith-number/FTA4GCW74WMWNTQVSW6GMAUCP2/graph.json","fetch_events":"https://pith.science/api/pith-number/FTA4GCW74WMWNTQVSW6GMAUCP2/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/FTA4GCW74WMWNTQVSW6GMAUCP2/action/timestamp_anchor","attest_storage":"https://pith.science/pith/FTA4GCW74WMWNTQVSW6GMAUCP2/action/storage_attestation","attest_author":"https://pith.science/pith/FTA4GCW74WMWNTQVSW6GMAUCP2/action/author_attestation","sign_citation":"https://pith.science/pith/FTA4GCW74WMWNTQVSW6GMAUCP2/action/citation_signature","submit_replication":"https://pith.science/pith/FTA4GCW74WMWNTQVSW6GMAUCP2/action/replication_record"}},"created_at":"2026-05-18T00:04:38.275540+00:00","updated_at":"2026-05-18T00:04:38.275540+00:00"}