{"bundle_type":"pith_open_graph_bundle","bundle_version":"1.0","pith_number":"pith:2018:GAQTQDFEFFVAGSFW4GPUHSJMDI","short_pith_number":"pith:GAQTQDFE","canonical_record":{"source":{"id":"1801.06469","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2018-01-19T15:50:47Z","cross_cats_sorted":["cond-mat.mtrl-sci"],"title_canon_sha256":"c1570fe580549a4d3b12fe914923136849eaa0bee7f053ff94e5f7aed8bba817","abstract_canon_sha256":"1b86a0745f0b7f73b062ad41fecf1c91c1cb18c037f76c2944d8c608d7092b9b"},"schema_version":"1.0"},"canonical_sha256":"3021380ca4296a0348b6e19f43c92c1a23f5a907aac92b626512adbc4c7f672c","source":{"kind":"arxiv","id":"1801.06469","version":1},"source_aliases":[{"alias_kind":"arxiv","alias_value":"1801.06469","created_at":"2026-05-18T00:17:41Z"},{"alias_kind":"arxiv_version","alias_value":"1801.06469v1","created_at":"2026-05-18T00:17:41Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1801.06469","created_at":"2026-05-18T00:17:41Z"},{"alias_kind":"pith_short_12","alias_value":"GAQTQDFEFFVA","created_at":"2026-05-18T12:32:25Z"},{"alias_kind":"pith_short_16","alias_value":"GAQTQDFEFFVAGSFW","created_at":"2026-05-18T12:32:25Z"},{"alias_kind":"pith_short_8","alias_value":"GAQTQDFE","created_at":"2026-05-18T12:32:25Z"}],"events":[{"event_type":"record_created","subject_pith_number":"pith:2018:GAQTQDFEFFVAGSFW4GPUHSJMDI","target":"record","payload":{"canonical_record":{"source":{"id":"1801.06469","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2018-01-19T15:50:47Z","cross_cats_sorted":["cond-mat.mtrl-sci"],"title_canon_sha256":"c1570fe580549a4d3b12fe914923136849eaa0bee7f053ff94e5f7aed8bba817","abstract_canon_sha256":"1b86a0745f0b7f73b062ad41fecf1c91c1cb18c037f76c2944d8c608d7092b9b"},"schema_version":"1.0"},"canonical_sha256":"3021380ca4296a0348b6e19f43c92c1a23f5a907aac92b626512adbc4c7f672c","receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T00:17:41.078972Z","signature_b64":"B/BeCBb3+osBzgtedGcuzUKp1aDNAk6pOWLX5vwrQ7hTUF4r6rKFwG3SOnY1GSBJP3mtdldascQaFJ5RS5XaDQ==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"3021380ca4296a0348b6e19f43c92c1a23f5a907aac92b626512adbc4c7f672c","last_reissued_at":"2026-05-18T00:17:41.078298Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T00:17:41.078298Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"source_kind":"arxiv","source_id":"1801.06469","source_version":1,"attestation_state":"computed"},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-05-18T00:17:41Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"fbbbPdoy87OZ0GIsFOyGaF5G7Ex5wrDMq6bBBr+69L8XP3L1EOU4EPNT95KEE9TMKJPhTL0lcGtLCAkwW2mWCQ==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-07-07T13:22:07.854518Z"},"content_sha256":"21f4bf75d01f9cf226576ba429a22651d2969089a8cee39569fff0ddae7520f0","schema_version":"1.0","event_id":"sha256:21f4bf75d01f9cf226576ba429a22651d2969089a8cee39569fff0ddae7520f0"},{"event_type":"graph_snapshot","subject_pith_number":"pith:2018:GAQTQDFEFFVAGSFW4GPUHSJMDI","target":"graph","payload":{"graph_snapshot":{"paper":{"title":"Highly selective dry etching of GaP in the presence of Al$_\\textrm{x}$Ga$_{1-\\textrm{x}}$P","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"physics.app-ph","authors_text":"Herwig Hahn, Lukas Czornomaz, Paul Seidler, Simon H\\\"onl, Yannick Baumgartner","submitted_at":"2018-01-19T15:50:47Z","abstract_excerpt":"We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum gallium phosphide (Al$_\\textrm{x}$Ga$_{1-\\textrm{x}}$P). Utilizing mixtures of silicon tetrachloride (SiCl$_4$) and sulfur hexafluoride (SF$_6$), selectivities exceeding 2700:1 are achieved at GaP etch rates above 3000 nm/min. A design of experiments has been employed to investigate the influence of the inductively coupled-plasma power, the chamber pressure, the DC bias and the ratio of SiC"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1801.06469","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"verdict_id":null},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-05-18T00:17:41Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"6p7AHINPzBvuZwi4KKUKbQ9c3rbx2kVdkceCgR+pcU3XeI3hSuXmzbg76ffe8AElp5IVQdJ+eKtI9gi8tIgtDw==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-07-07T13:22:07.854871Z"},"content_sha256":"99eb9bdac88105856957d86747d33fb803c19419564ea6ae5f00d861479fb31e","schema_version":"1.0","event_id":"sha256:99eb9bdac88105856957d86747d33fb803c19419564ea6ae5f00d861479fb31e"}],"timestamp_proofs":[],"mirror_hints":[{"mirror_type":"https","name":"Pith Resolver","base_url":"https://pith.science","bundle_url":"https://pith.science/pith/GAQTQDFEFFVAGSFW4GPUHSJMDI/bundle.json","state_url":"https://pith.science/pith/GAQTQDFEFFVAGSFW4GPUHSJMDI/state.json","well_known_bundle_url":"https://pith.science/.well-known/pith/GAQTQDFEFFVAGSFW4GPUHSJMDI/bundle.json","status":"primary"}],"public_keys":[{"key_id":"pith-v1-2026-05","algorithm":"ed25519","format":"raw","public_key_b64":"stVStoiQhXFxp4s2pdzPNoqVNBMojDU/fJ2db5S3CbM=","public_key_hex":"b2d552b68890857171a78b36a5dccf368a953413288c353f7c9d9d6f94b709b3","fingerprint_sha256_b32_first128bits":"RVFV5Z2OI2J3ZUO7ERDEBCYNKS","fingerprint_sha256_hex":"8d4b5ee74e4693bcd1df2446408b0d54","rotates_at":null,"url":"https://pith.science/pith-signing-key.json","notes":"Pith uses this Ed25519 key to sign canonical record SHA-256 digests. Verify with: ed25519_verify(public_key, message=canonical_sha256_bytes, signature=base64decode(signature_b64))."}],"merge_version":"pith-open-graph-merge-v1","built_at":"2026-07-07T13:22:07Z","links":{"resolver":"https://pith.science/pith/GAQTQDFEFFVAGSFW4GPUHSJMDI","bundle":"https://pith.science/pith/GAQTQDFEFFVAGSFW4GPUHSJMDI/bundle.json","state":"https://pith.science/pith/GAQTQDFEFFVAGSFW4GPUHSJMDI/state.json","well_known_bundle":"https://pith.science/.well-known/pith/GAQTQDFEFFVAGSFW4GPUHSJMDI/bundle.json"},"state":{"state_type":"pith_open_graph_state","state_version":"1.0","pith_number":"pith:2018:GAQTQDFEFFVAGSFW4GPUHSJMDI","merge_version":"pith-open-graph-merge-v1","event_count":2,"valid_event_count":2,"invalid_event_count":0,"equivocation_count":0,"current":{"canonical_record":{"metadata":{"abstract_canon_sha256":"1b86a0745f0b7f73b062ad41fecf1c91c1cb18c037f76c2944d8c608d7092b9b","cross_cats_sorted":["cond-mat.mtrl-sci"],"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2018-01-19T15:50:47Z","title_canon_sha256":"c1570fe580549a4d3b12fe914923136849eaa0bee7f053ff94e5f7aed8bba817"},"schema_version":"1.0","source":{"id":"1801.06469","kind":"arxiv","version":1}},"source_aliases":[{"alias_kind":"arxiv","alias_value":"1801.06469","created_at":"2026-05-18T00:17:41Z"},{"alias_kind":"arxiv_version","alias_value":"1801.06469v1","created_at":"2026-05-18T00:17:41Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1801.06469","created_at":"2026-05-18T00:17:41Z"},{"alias_kind":"pith_short_12","alias_value":"GAQTQDFEFFVA","created_at":"2026-05-18T12:32:25Z"},{"alias_kind":"pith_short_16","alias_value":"GAQTQDFEFFVAGSFW","created_at":"2026-05-18T12:32:25Z"},{"alias_kind":"pith_short_8","alias_value":"GAQTQDFE","created_at":"2026-05-18T12:32:25Z"}],"graph_snapshots":[{"event_id":"sha256:99eb9bdac88105856957d86747d33fb803c19419564ea6ae5f00d861479fb31e","target":"graph","created_at":"2026-05-18T00:17:41Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"graph_snapshot":{"author_claims":{"count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","strong_count":0},"builder_version":"pith-number-builder-2026-05-17-v1","claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"paper":{"abstract_excerpt":"We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum gallium phosphide (Al$_\\textrm{x}$Ga$_{1-\\textrm{x}}$P). Utilizing mixtures of silicon tetrachloride (SiCl$_4$) and sulfur hexafluoride (SF$_6$), selectivities exceeding 2700:1 are achieved at GaP etch rates above 3000 nm/min. A design of experiments has been employed to investigate the influence of the inductively coupled-plasma power, the chamber pressure, the DC bias and the ratio of SiC","authors_text":"Herwig Hahn, Lukas Czornomaz, Paul Seidler, Simon H\\\"onl, Yannick Baumgartner","cross_cats":["cond-mat.mtrl-sci"],"headline":"","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2018-01-19T15:50:47Z","title":"Highly selective dry etching of GaP in the presence of Al$_\\textrm{x}$Ga$_{1-\\textrm{x}}$P"},"references":{"count":0,"internal_anchors":0,"resolved_work":0,"sample":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1801.06469","kind":"arxiv","version":1},"verdict":{"created_at":null,"id":null,"model_set":{},"one_line_summary":"","pipeline_version":null,"pith_extraction_headline":"","strongest_claim":"","weakest_assumption":""}},"verdict_id":null}}],"author_attestations":[],"timestamp_anchors":[],"storage_attestations":[],"citation_signatures":[],"replication_records":[],"corrections":[],"mirror_hints":[],"record_created":{"event_id":"sha256:21f4bf75d01f9cf226576ba429a22651d2969089a8cee39569fff0ddae7520f0","target":"record","created_at":"2026-05-18T00:17:41Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"attestation_state":"computed","canonical_record":{"metadata":{"abstract_canon_sha256":"1b86a0745f0b7f73b062ad41fecf1c91c1cb18c037f76c2944d8c608d7092b9b","cross_cats_sorted":["cond-mat.mtrl-sci"],"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2018-01-19T15:50:47Z","title_canon_sha256":"c1570fe580549a4d3b12fe914923136849eaa0bee7f053ff94e5f7aed8bba817"},"schema_version":"1.0","source":{"id":"1801.06469","kind":"arxiv","version":1}},"canonical_sha256":"3021380ca4296a0348b6e19f43c92c1a23f5a907aac92b626512adbc4c7f672c","receipt":{"algorithm":"ed25519","builder_version":"pith-number-builder-2026-05-17-v1","canonical_sha256":"3021380ca4296a0348b6e19f43c92c1a23f5a907aac92b626512adbc4c7f672c","first_computed_at":"2026-05-18T00:17:41.078298Z","key_id":"pith-v1-2026-05","kind":"pith_receipt","last_reissued_at":"2026-05-18T00:17:41.078298Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","receipt_version":"0.3","signature_b64":"B/BeCBb3+osBzgtedGcuzUKp1aDNAk6pOWLX5vwrQ7hTUF4r6rKFwG3SOnY1GSBJP3mtdldascQaFJ5RS5XaDQ==","signature_status":"signed_v1","signed_at":"2026-05-18T00:17:41.078972Z","signed_message":"canonical_sha256_bytes"},"source_id":"1801.06469","source_kind":"arxiv","source_version":1}}},"equivocations":[],"invalid_events":[],"applied_event_ids":["sha256:21f4bf75d01f9cf226576ba429a22651d2969089a8cee39569fff0ddae7520f0","sha256:99eb9bdac88105856957d86747d33fb803c19419564ea6ae5f00d861479fb31e"],"state_sha256":"f74e8d3ca9c581ea1548e7afd1cde047d8d804162c40238a89e79c09540f557b"},"bundle_signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"nR6hfssTRgBu6xOLgzllQz/nKuVRK60GBDom7WDF5vesTlI4FRiXS4lRdZgPXo1In9YjXh4wjT8bEjbO2UWdDQ==","signed_message":"bundle_sha256_bytes","signed_at":"2026-07-07T13:22:07.856980Z","bundle_sha256":"1da4b94316688cceb9b98a1d9ac26d0a61f6b163d2a8c826191197ee6053fe71"}}