{"bundle_type":"pith_open_graph_bundle","bundle_version":"1.0","pith_number":"pith:2019:GCKIHHSYU6KIV7TT26JYCUESB3","short_pith_number":"pith:GCKIHHSY","canonical_record":{"source":{"id":"1902.10076","kind":"arxiv","version":1},"metadata":{"license":"http://creativecommons.org/licenses/by/4.0/","primary_cat":"physics.app-ph","submitted_at":"2019-02-26T17:35:36Z","cross_cats_sorted":["cond-mat.mtrl-sci"],"title_canon_sha256":"01e5c067dfe5a347fd4d8b6351011861031c5816d1760a31738baee28e270b14","abstract_canon_sha256":"ea7f3d1faea5efa4abdb844e10fa628ac6ceaff3f07b52451b0a7c6cff0ac24a"},"schema_version":"1.0"},"canonical_sha256":"3094839e58a7948afe73d7938150920ecc4c88a35bdea118993b9d0bf41745b1","source":{"kind":"arxiv","id":"1902.10076","version":1},"source_aliases":[{"alias_kind":"arxiv","alias_value":"1902.10076","created_at":"2026-05-17T23:43:03Z"},{"alias_kind":"arxiv_version","alias_value":"1902.10076v1","created_at":"2026-05-17T23:43:03Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1902.10076","created_at":"2026-05-17T23:43:03Z"},{"alias_kind":"pith_short_12","alias_value":"GCKIHHSYU6KI","created_at":"2026-05-18T12:33:18Z"},{"alias_kind":"pith_short_16","alias_value":"GCKIHHSYU6KIV7TT","created_at":"2026-05-18T12:33:18Z"},{"alias_kind":"pith_short_8","alias_value":"GCKIHHSY","created_at":"2026-05-18T12:33:18Z"}],"events":[{"event_type":"record_created","subject_pith_number":"pith:2019:GCKIHHSYU6KIV7TT26JYCUESB3","target":"record","payload":{"canonical_record":{"source":{"id":"1902.10076","kind":"arxiv","version":1},"metadata":{"license":"http://creativecommons.org/licenses/by/4.0/","primary_cat":"physics.app-ph","submitted_at":"2019-02-26T17:35:36Z","cross_cats_sorted":["cond-mat.mtrl-sci"],"title_canon_sha256":"01e5c067dfe5a347fd4d8b6351011861031c5816d1760a31738baee28e270b14","abstract_canon_sha256":"ea7f3d1faea5efa4abdb844e10fa628ac6ceaff3f07b52451b0a7c6cff0ac24a"},"schema_version":"1.0"},"canonical_sha256":"3094839e58a7948afe73d7938150920ecc4c88a35bdea118993b9d0bf41745b1","receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-17T23:43:03.244954Z","signature_b64":"MNisCH80NJyfCqqrbEKUBOlsXzGueooiP8lu35/v/zjnyOlgLYpkXodB0nWkXfXGbrIT9RXN8AqMAtY/4xOBDA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"3094839e58a7948afe73d7938150920ecc4c88a35bdea118993b9d0bf41745b1","last_reissued_at":"2026-05-17T23:43:03.244302Z","signature_status":"signed_v1","first_computed_at":"2026-05-17T23:43:03.244302Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"source_kind":"arxiv","source_id":"1902.10076","source_version":1,"attestation_state":"computed"},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-05-17T23:43:03Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"g8GJq85h9iFF8GOOiE3noIdXjM2SyGC1OkNKq9tdUB6LqhaUjOp0RNmOmFFqAwJSRU09eyjpePpAg1/PMUqjAg==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-07-03T08:35:36.003717Z"},"content_sha256":"a2f5b8859f2dc067501dd69128074d8c88ceaf0ca7b1d218c8fa022d16d930ba","schema_version":"1.0","event_id":"sha256:a2f5b8859f2dc067501dd69128074d8c88ceaf0ca7b1d218c8fa022d16d930ba"},{"event_type":"graph_snapshot","subject_pith_number":"pith:2019:GCKIHHSYU6KIV7TT26JYCUESB3","target":"graph","payload":{"graph_snapshot":{"paper":{"title":"Low temperature (< 200{\\deg}C) solution processed tunable flash memory device without tunneling and blocking layer","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"physics.app-ph","authors_text":"Sandip Mondal, V Venkataraman","submitted_at":"2019-02-26T17:35:36Z","abstract_excerpt":"Intrinsic charge trap capacitive non-volatile flash memories take a significant share of the semiconductor electronics market today. It is a challenge to create intrinsic traps in the dielectric layer without high temperature processing steps. While low temperature processed memory devices fabricated from polymers have been demonstrated as an alternative, their performance degrade rapidly after a few cycles of operation. Moreover conventional memory devices need the support of tunneling and blocking layers since the memory dielectric or polymer is incapable of preventing memory leakage. The ma"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1902.10076","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"verdict_id":null},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-05-17T23:43:03Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"hOCYbvuF8qmyACePDZTzkNZWzQM/6Ar96Gxz0UiLr1OzT/KXeA230r4AMdztiBxVRXofDH4nwT5nlBIGDVnYDA==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-07-03T08:35:36.004062Z"},"content_sha256":"ef8964c120abda519e287fd68b5bf77a0494239645e7950859e65ee32795b32f","schema_version":"1.0","event_id":"sha256:ef8964c120abda519e287fd68b5bf77a0494239645e7950859e65ee32795b32f"}],"timestamp_proofs":[],"mirror_hints":[{"mirror_type":"https","name":"Pith Resolver","base_url":"https://pith.science","bundle_url":"https://pith.science/pith/GCKIHHSYU6KIV7TT26JYCUESB3/bundle.json","state_url":"https://pith.science/pith/GCKIHHSYU6KIV7TT26JYCUESB3/state.json","well_known_bundle_url":"https://pith.science/.well-known/pith/GCKIHHSYU6KIV7TT26JYCUESB3/bundle.json","status":"primary"}],"public_keys":[{"key_id":"pith-v1-2026-05","algorithm":"ed25519","format":"raw","public_key_b64":"stVStoiQhXFxp4s2pdzPNoqVNBMojDU/fJ2db5S3CbM=","public_key_hex":"b2d552b68890857171a78b36a5dccf368a953413288c353f7c9d9d6f94b709b3","fingerprint_sha256_b32_first128bits":"RVFV5Z2OI2J3ZUO7ERDEBCYNKS","fingerprint_sha256_hex":"8d4b5ee74e4693bcd1df2446408b0d54","rotates_at":null,"url":"https://pith.science/pith-signing-key.json","notes":"Pith uses this Ed25519 key to sign canonical record SHA-256 digests. Verify with: ed25519_verify(public_key, message=canonical_sha256_bytes, signature=base64decode(signature_b64))."}],"merge_version":"pith-open-graph-merge-v1","built_at":"2026-07-03T08:35:36Z","links":{"resolver":"https://pith.science/pith/GCKIHHSYU6KIV7TT26JYCUESB3","bundle":"https://pith.science/pith/GCKIHHSYU6KIV7TT26JYCUESB3/bundle.json","state":"https://pith.science/pith/GCKIHHSYU6KIV7TT26JYCUESB3/state.json","well_known_bundle":"https://pith.science/.well-known/pith/GCKIHHSYU6KIV7TT26JYCUESB3/bundle.json"},"state":{"state_type":"pith_open_graph_state","state_version":"1.0","pith_number":"pith:2019:GCKIHHSYU6KIV7TT26JYCUESB3","merge_version":"pith-open-graph-merge-v1","event_count":2,"valid_event_count":2,"invalid_event_count":0,"equivocation_count":0,"current":{"canonical_record":{"metadata":{"abstract_canon_sha256":"ea7f3d1faea5efa4abdb844e10fa628ac6ceaff3f07b52451b0a7c6cff0ac24a","cross_cats_sorted":["cond-mat.mtrl-sci"],"license":"http://creativecommons.org/licenses/by/4.0/","primary_cat":"physics.app-ph","submitted_at":"2019-02-26T17:35:36Z","title_canon_sha256":"01e5c067dfe5a347fd4d8b6351011861031c5816d1760a31738baee28e270b14"},"schema_version":"1.0","source":{"id":"1902.10076","kind":"arxiv","version":1}},"source_aliases":[{"alias_kind":"arxiv","alias_value":"1902.10076","created_at":"2026-05-17T23:43:03Z"},{"alias_kind":"arxiv_version","alias_value":"1902.10076v1","created_at":"2026-05-17T23:43:03Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1902.10076","created_at":"2026-05-17T23:43:03Z"},{"alias_kind":"pith_short_12","alias_value":"GCKIHHSYU6KI","created_at":"2026-05-18T12:33:18Z"},{"alias_kind":"pith_short_16","alias_value":"GCKIHHSYU6KIV7TT","created_at":"2026-05-18T12:33:18Z"},{"alias_kind":"pith_short_8","alias_value":"GCKIHHSY","created_at":"2026-05-18T12:33:18Z"}],"graph_snapshots":[{"event_id":"sha256:ef8964c120abda519e287fd68b5bf77a0494239645e7950859e65ee32795b32f","target":"graph","created_at":"2026-05-17T23:43:03Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"graph_snapshot":{"author_claims":{"count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","strong_count":0},"builder_version":"pith-number-builder-2026-05-17-v1","claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"paper":{"abstract_excerpt":"Intrinsic charge trap capacitive non-volatile flash memories take a significant share of the semiconductor electronics market today. It is a challenge to create intrinsic traps in the dielectric layer without high temperature processing steps. While low temperature processed memory devices fabricated from polymers have been demonstrated as an alternative, their performance degrade rapidly after a few cycles of operation. Moreover conventional memory devices need the support of tunneling and blocking layers since the memory dielectric or polymer is incapable of preventing memory leakage. The ma","authors_text":"Sandip Mondal, V Venkataraman","cross_cats":["cond-mat.mtrl-sci"],"headline":"","license":"http://creativecommons.org/licenses/by/4.0/","primary_cat":"physics.app-ph","submitted_at":"2019-02-26T17:35:36Z","title":"Low temperature (< 200{\\deg}C) solution processed tunable flash memory device without tunneling and blocking layer"},"references":{"count":0,"internal_anchors":0,"resolved_work":0,"sample":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1902.10076","kind":"arxiv","version":1},"verdict":{"created_at":null,"id":null,"model_set":{},"one_line_summary":"","pipeline_version":null,"pith_extraction_headline":"","strongest_claim":"","weakest_assumption":""}},"verdict_id":null}}],"author_attestations":[],"timestamp_anchors":[],"storage_attestations":[],"citation_signatures":[],"replication_records":[],"corrections":[],"mirror_hints":[],"record_created":{"event_id":"sha256:a2f5b8859f2dc067501dd69128074d8c88ceaf0ca7b1d218c8fa022d16d930ba","target":"record","created_at":"2026-05-17T23:43:03Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"attestation_state":"computed","canonical_record":{"metadata":{"abstract_canon_sha256":"ea7f3d1faea5efa4abdb844e10fa628ac6ceaff3f07b52451b0a7c6cff0ac24a","cross_cats_sorted":["cond-mat.mtrl-sci"],"license":"http://creativecommons.org/licenses/by/4.0/","primary_cat":"physics.app-ph","submitted_at":"2019-02-26T17:35:36Z","title_canon_sha256":"01e5c067dfe5a347fd4d8b6351011861031c5816d1760a31738baee28e270b14"},"schema_version":"1.0","source":{"id":"1902.10076","kind":"arxiv","version":1}},"canonical_sha256":"3094839e58a7948afe73d7938150920ecc4c88a35bdea118993b9d0bf41745b1","receipt":{"algorithm":"ed25519","builder_version":"pith-number-builder-2026-05-17-v1","canonical_sha256":"3094839e58a7948afe73d7938150920ecc4c88a35bdea118993b9d0bf41745b1","first_computed_at":"2026-05-17T23:43:03.244302Z","key_id":"pith-v1-2026-05","kind":"pith_receipt","last_reissued_at":"2026-05-17T23:43:03.244302Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","receipt_version":"0.3","signature_b64":"MNisCH80NJyfCqqrbEKUBOlsXzGueooiP8lu35/v/zjnyOlgLYpkXodB0nWkXfXGbrIT9RXN8AqMAtY/4xOBDA==","signature_status":"signed_v1","signed_at":"2026-05-17T23:43:03.244954Z","signed_message":"canonical_sha256_bytes"},"source_id":"1902.10076","source_kind":"arxiv","source_version":1}}},"equivocations":[],"invalid_events":[],"applied_event_ids":["sha256:a2f5b8859f2dc067501dd69128074d8c88ceaf0ca7b1d218c8fa022d16d930ba","sha256:ef8964c120abda519e287fd68b5bf77a0494239645e7950859e65ee32795b32f"],"state_sha256":"80e27def6f3fd2ff3e867ee36a6df5a4dbccb0f00fa3f38181f78c6e60be316f"},"bundle_signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"Zv76vAD5HEuJqO8ctv3iZrM+FRGxcN3WynsPAxn0ouklgT5X/S3ogJGfbzLLyprdmO+UcLyHIcZ5j7vyr7L0Ag==","signed_message":"bundle_sha256_bytes","signed_at":"2026-07-03T08:35:36.006062Z","bundle_sha256":"7b7db4840fe3679710130bf279b8b0dfa095e189c360e6ee86c8ff4a2f9db68f"}}