{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2019:GF4C4PVPZW3H72ACDAIKRBVGXM","short_pith_number":"pith:GF4C4PVP","schema_version":"1.0","canonical_sha256":"31782e3eafcdb67fe8021810a886a6bb04373d64e939640622741e879d3e9876","source":{"kind":"arxiv","id":"1912.08373","version":1},"attestation_state":"computed","paper":{"title":"Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbOx","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"physics.app-ph","authors_text":"Robert Glen Elliman, Sanjoy Kumar Nandi, Shimul Kanti Nath, Shuai Li","submitted_at":"2019-12-18T04:11:25Z","abstract_excerpt":"Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb2O5/Pt devices. In particular, devices are shown to exhibit stable threshold switching under negative bias but to have a response under positive bias that depends on the choice of metal. Three distinct responses are highlighted: Devices with Nb and Ti top electrodes are shown to exhibit stable threshold switching with symmetric characteristics for both positive and negative polarities; devices with Cr top electrodes are shown to exhibit stable "},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1912.08373","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2019-12-18T04:11:25Z","cross_cats_sorted":["cond-mat.mtrl-sci"],"title_canon_sha256":"446f5b5d088424c70dc74c3e1b33495f83065ffb4270ced742cf32e89adb7ca8","abstract_canon_sha256":"868e3e8ab5c6b82faf0dbec64feb39418e53b9c196e075bbe561e602d6c2f857"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T00:58:06.842819Z","signature_b64":"G1CgnBnYqeR++HNYnCtGLBc0eOhULri4sowKoOGLKMe7s0TEjlZxZvaPpbAyAiIQT0nawyF/pwbCwszFPDOFDg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"31782e3eafcdb67fe8021810a886a6bb04373d64e939640622741e879d3e9876","last_reissued_at":"2026-07-05T00:58:06.842392Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T00:58:06.842392Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbOx","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"physics.app-ph","authors_text":"Robert Glen Elliman, Sanjoy Kumar Nandi, Shimul Kanti Nath, Shuai Li","submitted_at":"2019-12-18T04:11:25Z","abstract_excerpt":"Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb2O5/Pt devices. In particular, devices are shown to exhibit stable threshold switching under negative bias but to have a response under positive bias that depends on the choice of metal. Three distinct responses are highlighted: Devices with Nb and Ti top electrodes are shown to exhibit stable threshold switching with symmetric characteristics for both positive and negative polarities; devices with Cr top electrodes are shown to exhibit stable "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1912.08373","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/1912.08373/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1912.08373","created_at":"2026-07-05T00:58:06.842456+00:00"},{"alias_kind":"arxiv_version","alias_value":"1912.08373v1","created_at":"2026-07-05T00:58:06.842456+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1912.08373","created_at":"2026-07-05T00:58:06.842456+00:00"},{"alias_kind":"pith_short_12","alias_value":"GF4C4PVPZW3H","created_at":"2026-07-05T00:58:06.842456+00:00"},{"alias_kind":"pith_short_16","alias_value":"GF4C4PVPZW3H72AC","created_at":"2026-07-05T00:58:06.842456+00:00"},{"alias_kind":"pith_short_8","alias_value":"GF4C4PVP","created_at":"2026-07-05T00:58:06.842456+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":1,"internal_anchor_count":0,"sample":[{"citing_arxiv_id":"2604.14680","citing_title":"Anomalous Platinum and Oxygen Transport during Electroforming of NbOx Memristors","ref_index":3,"is_internal_anchor":false}]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/GF4C4PVPZW3H72ACDAIKRBVGXM","json":"https://pith.science/pith/GF4C4PVPZW3H72ACDAIKRBVGXM.json","graph_json":"https://pith.science/api/pith-number/GF4C4PVPZW3H72ACDAIKRBVGXM/graph.json","events_json":"https://pith.science/api/pith-number/GF4C4PVPZW3H72ACDAIKRBVGXM/events.json","paper":"https://pith.science/paper/GF4C4PVP"},"agent_actions":{"view_html":"https://pith.science/pith/GF4C4PVPZW3H72ACDAIKRBVGXM","download_json":"https://pith.science/pith/GF4C4PVPZW3H72ACDAIKRBVGXM.json","view_paper":"https://pith.science/paper/GF4C4PVP","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1912.08373&json=true","fetch_graph":"https://pith.science/api/pith-number/GF4C4PVPZW3H72ACDAIKRBVGXM/graph.json","fetch_events":"https://pith.science/api/pith-number/GF4C4PVPZW3H72ACDAIKRBVGXM/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/GF4C4PVPZW3H72ACDAIKRBVGXM/action/timestamp_anchor","attest_storage":"https://pith.science/pith/GF4C4PVPZW3H72ACDAIKRBVGXM/action/storage_attestation","attest_author":"https://pith.science/pith/GF4C4PVPZW3H72ACDAIKRBVGXM/action/author_attestation","sign_citation":"https://pith.science/pith/GF4C4PVPZW3H72ACDAIKRBVGXM/action/citation_signature","submit_replication":"https://pith.science/pith/GF4C4PVPZW3H72ACDAIKRBVGXM/action/replication_record"}},"created_at":"2026-07-05T00:58:06.842456+00:00","updated_at":"2026-07-05T00:58:06.842456+00:00"}