{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2010:HV7CUVBPBJPITV5BY6HSXB6YN7","short_pith_number":"pith:HV7CUVBP","schema_version":"1.0","canonical_sha256":"3d7e2a542f0a5e89d7a1c78f2b87d86fe2cd89bd91fef0ad230653c186d07dea","source":{"kind":"arxiv","id":"1011.2820","version":1},"attestation_state":"computed","paper":{"title":"Identification of the major cause of endemically poor mobilities in SiC/SiO2 structures","license":"http://creativecommons.org/licenses/by-nc-sa/3.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Sokrates T. Pantelides, Xiao Shen","submitted_at":"2010-11-12T03:58:47Z","abstract_excerpt":"Materials with good carrier mobilities are desired for device applications, but in real devices the mobilities are usually limited by the presence of interfaces and contacts. Mobility degradation at semiconductor-dielectric interfaces is generally attributed to defects at the interface or inside the dielectric, as is the case in Si/SiO2 structures, where processing does not introduce detrimental defects in the semiconductor. In the case of SiC/SiO2 structures, a decade of research focused on reducing or passivating interface and oxide defects, but the low mobilities have persisted. By invoking"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1011.2820","kind":"arxiv","version":1},"metadata":{"license":"http://creativecommons.org/licenses/by-nc-sa/3.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2010-11-12T03:58:47Z","cross_cats_sorted":[],"title_canon_sha256":"bf7f4a0bee3b2e12e2f1533b3b796c5c9ca4ea2b442d4f9d1fc23b19da195eba","abstract_canon_sha256":"7a2a516af02fc32833a3d88a11fe46a460a19a6623f7e9df277c573115d9f9f0"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T01:12:38.330555Z","signature_b64":"z+j5es9uqM46cAK9kVk5mwjo3CPIhQUDhu5dmUmvML41/lHfRfBSGrwjRmQVTL2SK/WkSDHtrt7qzSkRVx/cAg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"3d7e2a542f0a5e89d7a1c78f2b87d86fe2cd89bd91fef0ad230653c186d07dea","last_reissued_at":"2026-05-18T01:12:38.330208Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T01:12:38.330208Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Identification of the major cause of endemically poor mobilities in SiC/SiO2 structures","license":"http://creativecommons.org/licenses/by-nc-sa/3.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Sokrates T. Pantelides, Xiao Shen","submitted_at":"2010-11-12T03:58:47Z","abstract_excerpt":"Materials with good carrier mobilities are desired for device applications, but in real devices the mobilities are usually limited by the presence of interfaces and contacts. Mobility degradation at semiconductor-dielectric interfaces is generally attributed to defects at the interface or inside the dielectric, as is the case in Si/SiO2 structures, where processing does not introduce detrimental defects in the semiconductor. In the case of SiC/SiO2 structures, a decade of research focused on reducing or passivating interface and oxide defects, but the low mobilities have persisted. By invoking"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1011.2820","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1011.2820","created_at":"2026-05-18T01:12:38.330262+00:00"},{"alias_kind":"arxiv_version","alias_value":"1011.2820v1","created_at":"2026-05-18T01:12:38.330262+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1011.2820","created_at":"2026-05-18T01:12:38.330262+00:00"},{"alias_kind":"pith_short_12","alias_value":"HV7CUVBPBJPI","created_at":"2026-05-18T12:26:07.630475+00:00"},{"alias_kind":"pith_short_16","alias_value":"HV7CUVBPBJPITV5B","created_at":"2026-05-18T12:26:07.630475+00:00"},{"alias_kind":"pith_short_8","alias_value":"HV7CUVBP","created_at":"2026-05-18T12:26:07.630475+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/HV7CUVBPBJPITV5BY6HSXB6YN7","json":"https://pith.science/pith/HV7CUVBPBJPITV5BY6HSXB6YN7.json","graph_json":"https://pith.science/api/pith-number/HV7CUVBPBJPITV5BY6HSXB6YN7/graph.json","events_json":"https://pith.science/api/pith-number/HV7CUVBPBJPITV5BY6HSXB6YN7/events.json","paper":"https://pith.science/paper/HV7CUVBP"},"agent_actions":{"view_html":"https://pith.science/pith/HV7CUVBPBJPITV5BY6HSXB6YN7","download_json":"https://pith.science/pith/HV7CUVBPBJPITV5BY6HSXB6YN7.json","view_paper":"https://pith.science/paper/HV7CUVBP","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1011.2820&json=true","fetch_graph":"https://pith.science/api/pith-number/HV7CUVBPBJPITV5BY6HSXB6YN7/graph.json","fetch_events":"https://pith.science/api/pith-number/HV7CUVBPBJPITV5BY6HSXB6YN7/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/HV7CUVBPBJPITV5BY6HSXB6YN7/action/timestamp_anchor","attest_storage":"https://pith.science/pith/HV7CUVBPBJPITV5BY6HSXB6YN7/action/storage_attestation","attest_author":"https://pith.science/pith/HV7CUVBPBJPITV5BY6HSXB6YN7/action/author_attestation","sign_citation":"https://pith.science/pith/HV7CUVBPBJPITV5BY6HSXB6YN7/action/citation_signature","submit_replication":"https://pith.science/pith/HV7CUVBPBJPITV5BY6HSXB6YN7/action/replication_record"}},"created_at":"2026-05-18T01:12:38.330262+00:00","updated_at":"2026-05-18T01:12:38.330262+00:00"}