{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2016:IONWERWYV35NSNJ6VT6BREN6SS","short_pith_number":"pith:IONWERWY","schema_version":"1.0","canonical_sha256":"439b6246d8aefad9353eacfc1891be948aa80bfc055c0ed5ff3408e7a9e40e6d","source":{"kind":"arxiv","id":"1612.08729","version":2},"attestation_state":"computed","paper":{"title":"Annealing shallow Si/SiO$_2$ interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Alexei M. Tyryshkin, Jin-Sung Kim, Stephen A. Lyon","submitted_at":"2016-12-27T20:28:04Z","abstract_excerpt":"Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO$_2$ interface. Here we show that a forming gas anneal is effective at removing shallow defects ($\\leq$ 4 meV below the conduction band edge) created by an e-beam exposure by measuring the density of shallow electron traps in two sets of high-mobility MOS field-effect transistors (MOSFETs). One set was irradiated with an electron-beam (10 keV, 40 $\\mu$C/cm$^2$) and was subsequently annealed in forming gas while the other set remained unexposed. Low tempe"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1612.08729","kind":"arxiv","version":2},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2016-12-27T20:28:04Z","cross_cats_sorted":[],"title_canon_sha256":"40cad9052db0499e320546523ef2fa45658068d2b75fa5b533ea9497281e2ecb","abstract_canon_sha256":"0a41bb7dcc2ddb333522d5c00a323abdd096677722ab0fa053a5bf74619a4ea2"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T00:48:09.315579Z","signature_b64":"Cb8Svy6tNytAFYEQHKzCATdBGl+v/I0Kf8I24D4myfbfGUoekpaSoqWlxf/YZSSu1LQ0tRCD72r7AcycP2DNDw==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"439b6246d8aefad9353eacfc1891be948aa80bfc055c0ed5ff3408e7a9e40e6d","last_reissued_at":"2026-05-18T00:48:09.315153Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T00:48:09.315153Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Annealing shallow Si/SiO$_2$ interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Alexei M. Tyryshkin, Jin-Sung Kim, Stephen A. Lyon","submitted_at":"2016-12-27T20:28:04Z","abstract_excerpt":"Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO$_2$ interface. Here we show that a forming gas anneal is effective at removing shallow defects ($\\leq$ 4 meV below the conduction band edge) created by an e-beam exposure by measuring the density of shallow electron traps in two sets of high-mobility MOS field-effect transistors (MOSFETs). One set was irradiated with an electron-beam (10 keV, 40 $\\mu$C/cm$^2$) and was subsequently annealed in forming gas while the other set remained unexposed. Low tempe"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1612.08729","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1612.08729","created_at":"2026-05-18T00:48:09.315214+00:00"},{"alias_kind":"arxiv_version","alias_value":"1612.08729v2","created_at":"2026-05-18T00:48:09.315214+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1612.08729","created_at":"2026-05-18T00:48:09.315214+00:00"},{"alias_kind":"pith_short_12","alias_value":"IONWERWYV35N","created_at":"2026-05-18T12:30:22.444734+00:00"},{"alias_kind":"pith_short_16","alias_value":"IONWERWYV35NSNJ6","created_at":"2026-05-18T12:30:22.444734+00:00"},{"alias_kind":"pith_short_8","alias_value":"IONWERWY","created_at":"2026-05-18T12:30:22.444734+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/IONWERWYV35NSNJ6VT6BREN6SS","json":"https://pith.science/pith/IONWERWYV35NSNJ6VT6BREN6SS.json","graph_json":"https://pith.science/api/pith-number/IONWERWYV35NSNJ6VT6BREN6SS/graph.json","events_json":"https://pith.science/api/pith-number/IONWERWYV35NSNJ6VT6BREN6SS/events.json","paper":"https://pith.science/paper/IONWERWY"},"agent_actions":{"view_html":"https://pith.science/pith/IONWERWYV35NSNJ6VT6BREN6SS","download_json":"https://pith.science/pith/IONWERWYV35NSNJ6VT6BREN6SS.json","view_paper":"https://pith.science/paper/IONWERWY","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1612.08729&json=true","fetch_graph":"https://pith.science/api/pith-number/IONWERWYV35NSNJ6VT6BREN6SS/graph.json","fetch_events":"https://pith.science/api/pith-number/IONWERWYV35NSNJ6VT6BREN6SS/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/IONWERWYV35NSNJ6VT6BREN6SS/action/timestamp_anchor","attest_storage":"https://pith.science/pith/IONWERWYV35NSNJ6VT6BREN6SS/action/storage_attestation","attest_author":"https://pith.science/pith/IONWERWYV35NSNJ6VT6BREN6SS/action/author_attestation","sign_citation":"https://pith.science/pith/IONWERWYV35NSNJ6VT6BREN6SS/action/citation_signature","submit_replication":"https://pith.science/pith/IONWERWYV35NSNJ6VT6BREN6SS/action/replication_record"}},"created_at":"2026-05-18T00:48:09.315214+00:00","updated_at":"2026-05-18T00:48:09.315214+00:00"}