{"bundle_type":"pith_open_graph_bundle","bundle_version":"1.0","pith_number":"pith:2017:IPFUAJ2XE5SHRA7I7JJ3NH22DT","short_pith_number":"pith:IPFUAJ2X","canonical_record":{"source":{"id":"1711.02832","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"eess.SP","submitted_at":"2017-11-08T05:11:17Z","cross_cats_sorted":[],"title_canon_sha256":"d3a7ab30a0315f6262b5df0dd2ffc5d73da3818c11e5654ca7bd85b8b585a0ae","abstract_canon_sha256":"8a7e60e58723558f1473a9c6e3ab53f595efade972ae531737c7770d4364c8a5"},"schema_version":"1.0"},"canonical_sha256":"43cb40275727647883e8fa53b69f5a1ce7d388f1192488524ad4e244888ceb71","source":{"kind":"arxiv","id":"1711.02832","version":1},"source_aliases":[{"alias_kind":"arxiv","alias_value":"1711.02832","created_at":"2026-05-18T00:31:01Z"},{"alias_kind":"arxiv_version","alias_value":"1711.02832v1","created_at":"2026-05-18T00:31:01Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1711.02832","created_at":"2026-05-18T00:31:01Z"},{"alias_kind":"pith_short_12","alias_value":"IPFUAJ2XE5SH","created_at":"2026-05-18T12:31:21Z"},{"alias_kind":"pith_short_16","alias_value":"IPFUAJ2XE5SHRA7I","created_at":"2026-05-18T12:31:21Z"},{"alias_kind":"pith_short_8","alias_value":"IPFUAJ2X","created_at":"2026-05-18T12:31:21Z"}],"events":[{"event_type":"record_created","subject_pith_number":"pith:2017:IPFUAJ2XE5SHRA7I7JJ3NH22DT","target":"record","payload":{"canonical_record":{"source":{"id":"1711.02832","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"eess.SP","submitted_at":"2017-11-08T05:11:17Z","cross_cats_sorted":[],"title_canon_sha256":"d3a7ab30a0315f6262b5df0dd2ffc5d73da3818c11e5654ca7bd85b8b585a0ae","abstract_canon_sha256":"8a7e60e58723558f1473a9c6e3ab53f595efade972ae531737c7770d4364c8a5"},"schema_version":"1.0"},"canonical_sha256":"43cb40275727647883e8fa53b69f5a1ce7d388f1192488524ad4e244888ceb71","receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T00:31:01.568966Z","signature_b64":"OPKc5FVTg9SmxbpUTZK7wSnBxko7Kcek6/5tpCA205KA+hfttxz/oKv3vgYVW5A6z3xdPpjjwaxUGFg1+82BAQ==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"43cb40275727647883e8fa53b69f5a1ce7d388f1192488524ad4e244888ceb71","last_reissued_at":"2026-05-18T00:31:01.568277Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T00:31:01.568277Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"source_kind":"arxiv","source_id":"1711.02832","source_version":1,"attestation_state":"computed"},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-05-18T00:31:01Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"3xiNZLQ6vPQ0kVRhdB+HlDpYn/PlUsGkY2d6rdhVtieeNW/DegtZB9HsKlSvDYcK1wpCQSR6Efbln/IDcZjlCQ==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-05-26T18:41:06.704593Z"},"content_sha256":"afb9105652ccc82c82062e403172b602dde575b9e8a8d5ff97a3b0d832a521d6","schema_version":"1.0","event_id":"sha256:afb9105652ccc82c82062e403172b602dde575b9e8a8d5ff97a3b0d832a521d6"},{"event_type":"graph_snapshot","subject_pith_number":"pith:2017:IPFUAJ2XE5SHRA7I7JJ3NH22DT","target":"graph","payload":{"graph_snapshot":{"paper":{"title":"High-Speed Gate Driver Using GaN HEMTs for 20-MHz Hard Switching of SiC MOSFETs","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"eess.SP","authors_text":"Takafumi Okuda, Takashi Hikihara","submitted_at":"2017-11-08T05:11:17Z","abstract_excerpt":"In this paper, we investigated a gate driver using a GaN HEMT push-pull configuration for the high-frequency hard switching of a SiC power MOSFET. Low on-resistance and low input capacitance of GaN HEMTs are suitable for a high-frequency gate driver from the logic level, and robustness of SiC MOSFET with high avalanche capability is suitable for a valve transistor in power converters. Our proposed gate driver consists of digital isolators, complementary Si MOSFETs, and GaN HEMTs. The GaN HEMT push-pull stage has a high driving capability owing to its superior switching characteristics, and com"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1711.02832","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"verdict_id":null},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-05-18T00:31:01Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"h/aVaSOWGbo8L2emHmprp20lw1y74ht6XUA6AKjf++gaYV7zEbY238YIva3BhctDRzGivDaOongB2q0MP7V4CA==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-05-26T18:41:06.705179Z"},"content_sha256":"b262ea4fa47beaf80d88478a35a3866adbb917a5e9629c3c8fc80c20435a7ab1","schema_version":"1.0","event_id":"sha256:b262ea4fa47beaf80d88478a35a3866adbb917a5e9629c3c8fc80c20435a7ab1"}],"timestamp_proofs":[],"mirror_hints":[{"mirror_type":"https","name":"Pith Resolver","base_url":"https://pith.science","bundle_url":"https://pith.science/pith/IPFUAJ2XE5SHRA7I7JJ3NH22DT/bundle.json","state_url":"https://pith.science/pith/IPFUAJ2XE5SHRA7I7JJ3NH22DT/state.json","well_known_bundle_url":"https://pith.science/.well-known/pith/IPFUAJ2XE5SHRA7I7JJ3NH22DT/bundle.json","status":"primary"}],"public_keys":[{"key_id":"pith-v1-2026-05","algorithm":"ed25519","format":"raw","public_key_b64":"stVStoiQhXFxp4s2pdzPNoqVNBMojDU/fJ2db5S3CbM=","public_key_hex":"b2d552b68890857171a78b36a5dccf368a953413288c353f7c9d9d6f94b709b3","fingerprint_sha256_b32_first128bits":"RVFV5Z2OI2J3ZUO7ERDEBCYNKS","fingerprint_sha256_hex":"8d4b5ee74e4693bcd1df2446408b0d54","rotates_at":null,"url":"https://pith.science/pith-signing-key.json","notes":"Pith uses this Ed25519 key to sign canonical record SHA-256 digests. Verify with: ed25519_verify(public_key, message=canonical_sha256_bytes, signature=base64decode(signature_b64))."}],"merge_version":"pith-open-graph-merge-v1","built_at":"2026-05-26T18:41:06Z","links":{"resolver":"https://pith.science/pith/IPFUAJ2XE5SHRA7I7JJ3NH22DT","bundle":"https://pith.science/pith/IPFUAJ2XE5SHRA7I7JJ3NH22DT/bundle.json","state":"https://pith.science/pith/IPFUAJ2XE5SHRA7I7JJ3NH22DT/state.json","well_known_bundle":"https://pith.science/.well-known/pith/IPFUAJ2XE5SHRA7I7JJ3NH22DT/bundle.json"},"state":{"state_type":"pith_open_graph_state","state_version":"1.0","pith_number":"pith:2017:IPFUAJ2XE5SHRA7I7JJ3NH22DT","merge_version":"pith-open-graph-merge-v1","event_count":2,"valid_event_count":2,"invalid_event_count":0,"equivocation_count":0,"current":{"canonical_record":{"metadata":{"abstract_canon_sha256":"8a7e60e58723558f1473a9c6e3ab53f595efade972ae531737c7770d4364c8a5","cross_cats_sorted":[],"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"eess.SP","submitted_at":"2017-11-08T05:11:17Z","title_canon_sha256":"d3a7ab30a0315f6262b5df0dd2ffc5d73da3818c11e5654ca7bd85b8b585a0ae"},"schema_version":"1.0","source":{"id":"1711.02832","kind":"arxiv","version":1}},"source_aliases":[{"alias_kind":"arxiv","alias_value":"1711.02832","created_at":"2026-05-18T00:31:01Z"},{"alias_kind":"arxiv_version","alias_value":"1711.02832v1","created_at":"2026-05-18T00:31:01Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1711.02832","created_at":"2026-05-18T00:31:01Z"},{"alias_kind":"pith_short_12","alias_value":"IPFUAJ2XE5SH","created_at":"2026-05-18T12:31:21Z"},{"alias_kind":"pith_short_16","alias_value":"IPFUAJ2XE5SHRA7I","created_at":"2026-05-18T12:31:21Z"},{"alias_kind":"pith_short_8","alias_value":"IPFUAJ2X","created_at":"2026-05-18T12:31:21Z"}],"graph_snapshots":[{"event_id":"sha256:b262ea4fa47beaf80d88478a35a3866adbb917a5e9629c3c8fc80c20435a7ab1","target":"graph","created_at":"2026-05-18T00:31:01Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"graph_snapshot":{"author_claims":{"count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","strong_count":0},"builder_version":"pith-number-builder-2026-05-17-v1","claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"paper":{"abstract_excerpt":"In this paper, we investigated a gate driver using a GaN HEMT push-pull configuration for the high-frequency hard switching of a SiC power MOSFET. Low on-resistance and low input capacitance of GaN HEMTs are suitable for a high-frequency gate driver from the logic level, and robustness of SiC MOSFET with high avalanche capability is suitable for a valve transistor in power converters. Our proposed gate driver consists of digital isolators, complementary Si MOSFETs, and GaN HEMTs. The GaN HEMT push-pull stage has a high driving capability owing to its superior switching characteristics, and com","authors_text":"Takafumi Okuda, Takashi Hikihara","cross_cats":[],"headline":"","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"eess.SP","submitted_at":"2017-11-08T05:11:17Z","title":"High-Speed Gate Driver Using GaN HEMTs for 20-MHz Hard Switching of SiC MOSFETs"},"references":{"count":0,"internal_anchors":0,"resolved_work":0,"sample":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1711.02832","kind":"arxiv","version":1},"verdict":{"created_at":null,"id":null,"model_set":{},"one_line_summary":"","pipeline_version":null,"pith_extraction_headline":"","strongest_claim":"","weakest_assumption":""}},"verdict_id":null}}],"author_attestations":[],"timestamp_anchors":[],"storage_attestations":[],"citation_signatures":[],"replication_records":[],"corrections":[],"mirror_hints":[],"record_created":{"event_id":"sha256:afb9105652ccc82c82062e403172b602dde575b9e8a8d5ff97a3b0d832a521d6","target":"record","created_at":"2026-05-18T00:31:01Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"attestation_state":"computed","canonical_record":{"metadata":{"abstract_canon_sha256":"8a7e60e58723558f1473a9c6e3ab53f595efade972ae531737c7770d4364c8a5","cross_cats_sorted":[],"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"eess.SP","submitted_at":"2017-11-08T05:11:17Z","title_canon_sha256":"d3a7ab30a0315f6262b5df0dd2ffc5d73da3818c11e5654ca7bd85b8b585a0ae"},"schema_version":"1.0","source":{"id":"1711.02832","kind":"arxiv","version":1}},"canonical_sha256":"43cb40275727647883e8fa53b69f5a1ce7d388f1192488524ad4e244888ceb71","receipt":{"algorithm":"ed25519","builder_version":"pith-number-builder-2026-05-17-v1","canonical_sha256":"43cb40275727647883e8fa53b69f5a1ce7d388f1192488524ad4e244888ceb71","first_computed_at":"2026-05-18T00:31:01.568277Z","key_id":"pith-v1-2026-05","kind":"pith_receipt","last_reissued_at":"2026-05-18T00:31:01.568277Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","receipt_version":"0.3","signature_b64":"OPKc5FVTg9SmxbpUTZK7wSnBxko7Kcek6/5tpCA205KA+hfttxz/oKv3vgYVW5A6z3xdPpjjwaxUGFg1+82BAQ==","signature_status":"signed_v1","signed_at":"2026-05-18T00:31:01.568966Z","signed_message":"canonical_sha256_bytes"},"source_id":"1711.02832","source_kind":"arxiv","source_version":1}}},"equivocations":[],"invalid_events":[],"applied_event_ids":["sha256:afb9105652ccc82c82062e403172b602dde575b9e8a8d5ff97a3b0d832a521d6","sha256:b262ea4fa47beaf80d88478a35a3866adbb917a5e9629c3c8fc80c20435a7ab1"],"state_sha256":"4ad9db237c663c3f08aa5cf5332871d2d9a1e168adc2feba427706abd7a17062"},"bundle_signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"Hs5vIPKms3VLbqVlhn+hFvw1J0r6bRghr1sIvcwGBms3dsPoY0+iisHhz7oQZ6gXE6Jp/ixLFp8bJIrJSj4hBQ==","signed_message":"bundle_sha256_bytes","signed_at":"2026-05-26T18:41:06.707720Z","bundle_sha256":"c79768b71f02ac03a0650b45c00d88784c8e88de5f052e01114e83dd58e4d776"}}