{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2014:IZ5OB7MBAO4VUL3E6R32XPMU66","short_pith_number":"pith:IZ5OB7MB","schema_version":"1.0","canonical_sha256":"467ae0fd8103b95a2f64f477abbd94f7ae26b9b0304961a6778fa79cb0e5ca6e","source":{"kind":"arxiv","id":"1406.3643","version":1},"attestation_state":"computed","paper":{"title":"Ion traps fabricated in a CMOS foundry","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["physics.atom-ph"],"primary_cat":"quant-ph","authors_text":"A. M. Eltony, C. D. Bruzewicz, I. L. Chuang, J. Chiaverini, J. M. Sage, K. K. Mehta, R. J. Ram","submitted_at":"2014-06-13T21:02:57Z","abstract_excerpt":"We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heat"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1406.3643","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"quant-ph","submitted_at":"2014-06-13T21:02:57Z","cross_cats_sorted":["physics.atom-ph"],"title_canon_sha256":"fc4266dae7ef9323ac5f92bb080611fc1c37e66f1006b7dc181774d53097b07f","abstract_canon_sha256":"40687bf7d47e9dab21a2fcbbd823a56e219c4dd1070445913439902239f55323"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T02:42:46.024484Z","signature_b64":"yPF0jdUqgutAqTZaRQkRB6OB6PzsuytTPErkhOSmnBpritujkNDysHv/ZpVpq3Ta+Ei7cgbeTSORGdbhbXhTCA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"467ae0fd8103b95a2f64f477abbd94f7ae26b9b0304961a6778fa79cb0e5ca6e","last_reissued_at":"2026-05-18T02:42:46.024002Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T02:42:46.024002Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Ion traps fabricated in a CMOS foundry","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["physics.atom-ph"],"primary_cat":"quant-ph","authors_text":"A. M. Eltony, C. D. Bruzewicz, I. L. Chuang, J. Chiaverini, J. M. Sage, K. K. Mehta, R. J. Ram","submitted_at":"2014-06-13T21:02:57Z","abstract_excerpt":"We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heat"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1406.3643","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1406.3643","created_at":"2026-05-18T02:42:46.024059+00:00"},{"alias_kind":"arxiv_version","alias_value":"1406.3643v1","created_at":"2026-05-18T02:42:46.024059+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1406.3643","created_at":"2026-05-18T02:42:46.024059+00:00"},{"alias_kind":"pith_short_12","alias_value":"IZ5OB7MBAO4V","created_at":"2026-05-18T12:28:33.132498+00:00"},{"alias_kind":"pith_short_16","alias_value":"IZ5OB7MBAO4VUL3E","created_at":"2026-05-18T12:28:33.132498+00:00"},{"alias_kind":"pith_short_8","alias_value":"IZ5OB7MB","created_at":"2026-05-18T12:28:33.132498+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/IZ5OB7MBAO4VUL3E6R32XPMU66","json":"https://pith.science/pith/IZ5OB7MBAO4VUL3E6R32XPMU66.json","graph_json":"https://pith.science/api/pith-number/IZ5OB7MBAO4VUL3E6R32XPMU66/graph.json","events_json":"https://pith.science/api/pith-number/IZ5OB7MBAO4VUL3E6R32XPMU66/events.json","paper":"https://pith.science/paper/IZ5OB7MB"},"agent_actions":{"view_html":"https://pith.science/pith/IZ5OB7MBAO4VUL3E6R32XPMU66","download_json":"https://pith.science/pith/IZ5OB7MBAO4VUL3E6R32XPMU66.json","view_paper":"https://pith.science/paper/IZ5OB7MB","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1406.3643&json=true","fetch_graph":"https://pith.science/api/pith-number/IZ5OB7MBAO4VUL3E6R32XPMU66/graph.json","fetch_events":"https://pith.science/api/pith-number/IZ5OB7MBAO4VUL3E6R32XPMU66/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/IZ5OB7MBAO4VUL3E6R32XPMU66/action/timestamp_anchor","attest_storage":"https://pith.science/pith/IZ5OB7MBAO4VUL3E6R32XPMU66/action/storage_attestation","attest_author":"https://pith.science/pith/IZ5OB7MBAO4VUL3E6R32XPMU66/action/author_attestation","sign_citation":"https://pith.science/pith/IZ5OB7MBAO4VUL3E6R32XPMU66/action/citation_signature","submit_replication":"https://pith.science/pith/IZ5OB7MBAO4VUL3E6R32XPMU66/action/replication_record"}},"created_at":"2026-05-18T02:42:46.024059+00:00","updated_at":"2026-05-18T02:42:46.024059+00:00"}