{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2016:JH7QGHIFS3MTSKVXRQGCA2K3ML","short_pith_number":"pith:JH7QGHIF","schema_version":"1.0","canonical_sha256":"49ff031d0596d9392ab78c0c20695b62ed31f6532db83fdfb0b13ebc8f8d6aa1","source":{"kind":"arxiv","id":"1606.01709","version":1},"attestation_state":"computed","paper":{"title":"Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Christoph Tegenkamp, Davood Momeni Pakdehi, Frank Hohls, Franz J. Ahlers, Hans W. Schumacher, Jakob Lidzba, Jens Baringhaus, Johannes Aprojanz, Klaus Pierz, Martin Goetz, Mattias Kruskopf, Rainer Stosch, Stefan Wundrack, Thomas Seyller, Thorsten Dziomba","submitted_at":"2016-06-06T12:12:15Z","abstract_excerpt":"We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of polymer adsorbates which act as a carbon "},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1606.01709","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2016-06-06T12:12:15Z","cross_cats_sorted":[],"title_canon_sha256":"db4a3bd53a35478f5b991dcf190515c6939c7001dbc1b215017d50709cc6bc12","abstract_canon_sha256":"fc0f40176014a6279ba271660964e63ea1072f604eafb97c3d6532038c71ca9c"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-17T23:44:48.703494Z","signature_b64":"xtGQShzbxsONmDVLF0sJCt8aB2ut/qodRQqT93nh/3XOG5R/ccS2w8AvAsgDoU7aO1k3WHsTm9dEa2beU0rRDA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"49ff031d0596d9392ab78c0c20695b62ed31f6532db83fdfb0b13ebc8f8d6aa1","last_reissued_at":"2026-05-17T23:44:48.702827Z","signature_status":"signed_v1","first_computed_at":"2026-05-17T23:44:48.702827Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Christoph Tegenkamp, Davood Momeni Pakdehi, Frank Hohls, Franz J. Ahlers, Hans W. Schumacher, Jakob Lidzba, Jens Baringhaus, Johannes Aprojanz, Klaus Pierz, Martin Goetz, Mattias Kruskopf, Rainer Stosch, Stefan Wundrack, Thomas Seyller, Thorsten Dziomba","submitted_at":"2016-06-06T12:12:15Z","abstract_excerpt":"We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of polymer adsorbates which act as a carbon "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1606.01709","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1606.01709","created_at":"2026-05-17T23:44:48.702930+00:00"},{"alias_kind":"arxiv_version","alias_value":"1606.01709v1","created_at":"2026-05-17T23:44:48.702930+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1606.01709","created_at":"2026-05-17T23:44:48.702930+00:00"},{"alias_kind":"pith_short_12","alias_value":"JH7QGHIFS3MT","created_at":"2026-05-18T12:30:25.849896+00:00"},{"alias_kind":"pith_short_16","alias_value":"JH7QGHIFS3MTSKVX","created_at":"2026-05-18T12:30:25.849896+00:00"},{"alias_kind":"pith_short_8","alias_value":"JH7QGHIF","created_at":"2026-05-18T12:30:25.849896+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/JH7QGHIFS3MTSKVXRQGCA2K3ML","json":"https://pith.science/pith/JH7QGHIFS3MTSKVXRQGCA2K3ML.json","graph_json":"https://pith.science/api/pith-number/JH7QGHIFS3MTSKVXRQGCA2K3ML/graph.json","events_json":"https://pith.science/api/pith-number/JH7QGHIFS3MTSKVXRQGCA2K3ML/events.json","paper":"https://pith.science/paper/JH7QGHIF"},"agent_actions":{"view_html":"https://pith.science/pith/JH7QGHIFS3MTSKVXRQGCA2K3ML","download_json":"https://pith.science/pith/JH7QGHIFS3MTSKVXRQGCA2K3ML.json","view_paper":"https://pith.science/paper/JH7QGHIF","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1606.01709&json=true","fetch_graph":"https://pith.science/api/pith-number/JH7QGHIFS3MTSKVXRQGCA2K3ML/graph.json","fetch_events":"https://pith.science/api/pith-number/JH7QGHIFS3MTSKVXRQGCA2K3ML/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/JH7QGHIFS3MTSKVXRQGCA2K3ML/action/timestamp_anchor","attest_storage":"https://pith.science/pith/JH7QGHIFS3MTSKVXRQGCA2K3ML/action/storage_attestation","attest_author":"https://pith.science/pith/JH7QGHIFS3MTSKVXRQGCA2K3ML/action/author_attestation","sign_citation":"https://pith.science/pith/JH7QGHIFS3MTSKVXRQGCA2K3ML/action/citation_signature","submit_replication":"https://pith.science/pith/JH7QGHIFS3MTSKVXRQGCA2K3ML/action/replication_record"}},"created_at":"2026-05-17T23:44:48.702930+00:00","updated_at":"2026-05-17T23:44:48.702930+00:00"}