{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2014:JIIBELZ4IMOZCFTOAGUA3VJYIL","short_pith_number":"pith:JIIBELZ4","schema_version":"1.0","canonical_sha256":"4a10122f3c431d91166e01a80dd53842f990191e5ae88ea8c4c90b6cd1c1c9cd","source":{"kind":"arxiv","id":"1411.4833","version":1},"attestation_state":"computed","paper":{"title":"Sub 20 nm Silicon Patterning and Metal Lift-Off Using Thermal Scanning Probe Lithography","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Armin W. Knoll, Colin Rawlings, Daniel J. Coady, Heiko Wolf, James L. Hedrick, Philipp Mensch, Urs Duerig","submitted_at":"2014-11-18T13:13:05Z","abstract_excerpt":"The most direct definition of a patterning process' resolution is the smallest half-pitch feature it is capable of transferring onto the substrate. Here we demonstrate that thermal Scanning Probe Lithography (t-SPL) is capable of fabricating dense line patterns in silicon and metal lift-off features at sub 20 nm feature size. The dense silicon lines were written at a half pitch of 18.3 nm to a depth of 5 nm into a 9 nm polyphthalaldehyde thermal imaging layer by t-SPL. For processing we used a three-layer stack comprising an evaporated SiO2 hardmask which is just 2-3 nm thick. The hardmask is "},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1411.4833","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2014-11-18T13:13:05Z","cross_cats_sorted":[],"title_canon_sha256":"e4a98ff1ff4178bf272225bfb7908375acd2a6ef9b11c3ddc54a6bb7f0bf2c37","abstract_canon_sha256":"16c99ec29863f6d0fa30be1d3eaa21976c5f9aa8236f6048e09ac1768c920cf6"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T06:05:52.372836Z","signature_b64":"d9UsD9tY/oa7QjJQVy5KfkmVH7oOCh4SDIRr0fyia47Wn8/TcLm7mzN67GBWj2x7h8zXnDSFNBdAocgXB0dPAA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"4a10122f3c431d91166e01a80dd53842f990191e5ae88ea8c4c90b6cd1c1c9cd","last_reissued_at":"2026-07-05T06:05:52.372385Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T06:05:52.372385Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Sub 20 nm Silicon Patterning and Metal Lift-Off Using Thermal Scanning Probe Lithography","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Armin W. Knoll, Colin Rawlings, Daniel J. Coady, Heiko Wolf, James L. Hedrick, Philipp Mensch, Urs Duerig","submitted_at":"2014-11-18T13:13:05Z","abstract_excerpt":"The most direct definition of a patterning process' resolution is the smallest half-pitch feature it is capable of transferring onto the substrate. Here we demonstrate that thermal Scanning Probe Lithography (t-SPL) is capable of fabricating dense line patterns in silicon and metal lift-off features at sub 20 nm feature size. The dense silicon lines were written at a half pitch of 18.3 nm to a depth of 5 nm into a 9 nm polyphthalaldehyde thermal imaging layer by t-SPL. For processing we used a three-layer stack comprising an evaporated SiO2 hardmask which is just 2-3 nm thick. The hardmask is "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1411.4833","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/1411.4833/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1411.4833","created_at":"2026-07-05T06:05:52.372443+00:00"},{"alias_kind":"arxiv_version","alias_value":"1411.4833v1","created_at":"2026-07-05T06:05:52.372443+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1411.4833","created_at":"2026-07-05T06:05:52.372443+00:00"},{"alias_kind":"pith_short_12","alias_value":"JIIBELZ4IMOZ","created_at":"2026-07-05T06:05:52.372443+00:00"},{"alias_kind":"pith_short_16","alias_value":"JIIBELZ4IMOZCFTO","created_at":"2026-07-05T06:05:52.372443+00:00"},{"alias_kind":"pith_short_8","alias_value":"JIIBELZ4","created_at":"2026-07-05T06:05:52.372443+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/JIIBELZ4IMOZCFTOAGUA3VJYIL","json":"https://pith.science/pith/JIIBELZ4IMOZCFTOAGUA3VJYIL.json","graph_json":"https://pith.science/api/pith-number/JIIBELZ4IMOZCFTOAGUA3VJYIL/graph.json","events_json":"https://pith.science/api/pith-number/JIIBELZ4IMOZCFTOAGUA3VJYIL/events.json","paper":"https://pith.science/paper/JIIBELZ4"},"agent_actions":{"view_html":"https://pith.science/pith/JIIBELZ4IMOZCFTOAGUA3VJYIL","download_json":"https://pith.science/pith/JIIBELZ4IMOZCFTOAGUA3VJYIL.json","view_paper":"https://pith.science/paper/JIIBELZ4","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1411.4833&json=true","fetch_graph":"https://pith.science/api/pith-number/JIIBELZ4IMOZCFTOAGUA3VJYIL/graph.json","fetch_events":"https://pith.science/api/pith-number/JIIBELZ4IMOZCFTOAGUA3VJYIL/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/JIIBELZ4IMOZCFTOAGUA3VJYIL/action/timestamp_anchor","attest_storage":"https://pith.science/pith/JIIBELZ4IMOZCFTOAGUA3VJYIL/action/storage_attestation","attest_author":"https://pith.science/pith/JIIBELZ4IMOZCFTOAGUA3VJYIL/action/author_attestation","sign_citation":"https://pith.science/pith/JIIBELZ4IMOZCFTOAGUA3VJYIL/action/citation_signature","submit_replication":"https://pith.science/pith/JIIBELZ4IMOZCFTOAGUA3VJYIL/action/replication_record"}},"created_at":"2026-07-05T06:05:52.372443+00:00","updated_at":"2026-07-05T06:05:52.372443+00:00"}