{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2018:JMV4DIEN5P2NRDOJ6PCQ5AVVAE","short_pith_number":"pith:JMV4DIEN","schema_version":"1.0","canonical_sha256":"4b2bc1a08debf4d88dc9f3c50e82b50114cbd339f2997c79f2b8a25a0847cc19","source":{"kind":"arxiv","id":"1812.10225","version":1},"attestation_state":"computed","paper":{"title":"Lattice-mismatched semiconductor heterostructures","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Chen Zhang, Dong Liu, In-Kyu Lee, Jae Ha Ryu, Jeongpil Park, Jian Shi, Jiarui Gong, Jihye Bong, Jisoo Kim, Jung-Hun Seo, Kwangeun Kim, Mohadeseh A. Baboli, Munho Kim, Parsian K. Mohseni, Sang June Cho, Shaoqin Gong, Solomon Mikael, Wonsik Choi, Xin Yin, Xiuling Li, Xudong Wang, Zhenqiang Ma","submitted_at":"2018-12-26T04:59:50Z","abstract_excerpt":"Semiconductor heterostructure is a critical building block for modern semiconductor devices. However, forming semiconductor heterostructures of lattice-mismatch has been a great challenge for several decades. Epitaxial growth is infeasible to form abrupt heterostructures with large lattice-mismatch while mechanical-thermal bonding results in a high density of interface defects and therefore severely limits device applications. Here we show an ultra-thin oxide-interfaced approach for the successful formation of lattice-mismatched semiconductor heterostructures. Following the depiction of a theo"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1812.10225","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2018-12-26T04:59:50Z","cross_cats_sorted":[],"title_canon_sha256":"a17e955eb23c9df12c9d3b1130a6e5d3e83a0caabdb147251dde1b84153ce90c","abstract_canon_sha256":"cc0766040f6441131992a4d509d0f00dc152344576fbc96a393f3f726ee69360"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-17T23:57:24.752886Z","signature_b64":"F1Ns3+l+KFoh0nALaPncwMNRcxslm98c/fYPUX6VI9I2Gy1B3dVyPypxThjQxSNEFa3kTI0n0AlgGY7Fcu4mBw==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"4b2bc1a08debf4d88dc9f3c50e82b50114cbd339f2997c79f2b8a25a0847cc19","last_reissued_at":"2026-05-17T23:57:24.752342Z","signature_status":"signed_v1","first_computed_at":"2026-05-17T23:57:24.752342Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Lattice-mismatched semiconductor heterostructures","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Chen Zhang, Dong Liu, In-Kyu Lee, Jae Ha Ryu, Jeongpil Park, Jian Shi, Jiarui Gong, Jihye Bong, Jisoo Kim, Jung-Hun Seo, Kwangeun Kim, Mohadeseh A. Baboli, Munho Kim, Parsian K. Mohseni, Sang June Cho, Shaoqin Gong, Solomon Mikael, Wonsik Choi, Xin Yin, Xiuling Li, Xudong Wang, Zhenqiang Ma","submitted_at":"2018-12-26T04:59:50Z","abstract_excerpt":"Semiconductor heterostructure is a critical building block for modern semiconductor devices. However, forming semiconductor heterostructures of lattice-mismatch has been a great challenge for several decades. Epitaxial growth is infeasible to form abrupt heterostructures with large lattice-mismatch while mechanical-thermal bonding results in a high density of interface defects and therefore severely limits device applications. Here we show an ultra-thin oxide-interfaced approach for the successful formation of lattice-mismatched semiconductor heterostructures. Following the depiction of a theo"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1812.10225","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1812.10225","created_at":"2026-05-17T23:57:24.752418+00:00"},{"alias_kind":"arxiv_version","alias_value":"1812.10225v1","created_at":"2026-05-17T23:57:24.752418+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1812.10225","created_at":"2026-05-17T23:57:24.752418+00:00"},{"alias_kind":"pith_short_12","alias_value":"JMV4DIEN5P2N","created_at":"2026-05-18T12:32:31.084164+00:00"},{"alias_kind":"pith_short_16","alias_value":"JMV4DIEN5P2NRDOJ","created_at":"2026-05-18T12:32:31.084164+00:00"},{"alias_kind":"pith_short_8","alias_value":"JMV4DIEN","created_at":"2026-05-18T12:32:31.084164+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":1,"internal_anchor_count":0,"sample":[{"citing_arxiv_id":"2605.09108","citing_title":"Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3","ref_index":3,"is_internal_anchor":false}]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/JMV4DIEN5P2NRDOJ6PCQ5AVVAE","json":"https://pith.science/pith/JMV4DIEN5P2NRDOJ6PCQ5AVVAE.json","graph_json":"https://pith.science/api/pith-number/JMV4DIEN5P2NRDOJ6PCQ5AVVAE/graph.json","events_json":"https://pith.science/api/pith-number/JMV4DIEN5P2NRDOJ6PCQ5AVVAE/events.json","paper":"https://pith.science/paper/JMV4DIEN"},"agent_actions":{"view_html":"https://pith.science/pith/JMV4DIEN5P2NRDOJ6PCQ5AVVAE","download_json":"https://pith.science/pith/JMV4DIEN5P2NRDOJ6PCQ5AVVAE.json","view_paper":"https://pith.science/paper/JMV4DIEN","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1812.10225&json=true","fetch_graph":"https://pith.science/api/pith-number/JMV4DIEN5P2NRDOJ6PCQ5AVVAE/graph.json","fetch_events":"https://pith.science/api/pith-number/JMV4DIEN5P2NRDOJ6PCQ5AVVAE/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/JMV4DIEN5P2NRDOJ6PCQ5AVVAE/action/timestamp_anchor","attest_storage":"https://pith.science/pith/JMV4DIEN5P2NRDOJ6PCQ5AVVAE/action/storage_attestation","attest_author":"https://pith.science/pith/JMV4DIEN5P2NRDOJ6PCQ5AVVAE/action/author_attestation","sign_citation":"https://pith.science/pith/JMV4DIEN5P2NRDOJ6PCQ5AVVAE/action/citation_signature","submit_replication":"https://pith.science/pith/JMV4DIEN5P2NRDOJ6PCQ5AVVAE/action/replication_record"}},"created_at":"2026-05-17T23:57:24.752418+00:00","updated_at":"2026-05-17T23:57:24.752418+00:00"}