{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2024:KCSNANHHMRRMGUNKUAAFHNPJCM","short_pith_number":"pith:KCSNANHH","schema_version":"1.0","canonical_sha256":"50a4d034e76462c351aaa00053b5e913320f578522f42e0f43cce918adf93376","source":{"kind":"arxiv","id":"2407.04501","version":2},"attestation_state":"computed","paper":{"title":"Cryogenic Behavior of High-Permittivity Gate Dielectrics: The Impact of the Atomic Layer Deposition Temperature and the Lithographic Patterning Method","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall","cond-mat.supr-con"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Alessandro Paghi, Francesco Giazotto, Giorgio De Simoni, Sebastiano Battisti, Simone Tortorella","submitted_at":"2024-07-05T13:42:30Z","abstract_excerpt":"Dielectrics featuring a high relative permittivity, i.e., high-k dielectrics, have become the standard insulators in gate architectures, enhancing the electrical performance of both room temperature and cryogenic electronics. This study delves into the cryogenic (3 K) performance of high-k dielectrics commonly used as gate insulators. We fabricated Al2O3 and HfO2 layers via Atomic Layer Deposition (ALD) and we extrapolated relative permittivity (k) and dielectric strength (E_BD) from AC (100 Hz to 100 kHz) and DC measurements on metal-insulator-metal capacitors. Our findings reveal a strong de"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2407.04501","kind":"arxiv","version":2},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2024-07-05T13:42:30Z","cross_cats_sorted":["cond-mat.mes-hall","cond-mat.supr-con"],"title_canon_sha256":"012a318fa44abfc5b75bb164ec83d82a5a500074a43fee0dd16ca70b0dec0c8f","abstract_canon_sha256":"633561e212ea20cedb18357ceea1138e76a2ea7dd78a6832d586e5ec19d634f7"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T10:07:25.632278Z","signature_b64":"FRb1Cs/MhstpteuLh6+YBl4k9GfXeGU8e8cGjFoRv8NumZL7oSOgAIr4rSuhs8HNubQjVLW5p5HZPNtJaNTPCw==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"50a4d034e76462c351aaa00053b5e913320f578522f42e0f43cce918adf93376","last_reissued_at":"2026-07-05T10:07:25.631777Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T10:07:25.631777Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Cryogenic Behavior of High-Permittivity Gate Dielectrics: The Impact of the Atomic Layer Deposition Temperature and the Lithographic Patterning Method","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall","cond-mat.supr-con"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Alessandro Paghi, Francesco Giazotto, Giorgio De Simoni, Sebastiano Battisti, Simone Tortorella","submitted_at":"2024-07-05T13:42:30Z","abstract_excerpt":"Dielectrics featuring a high relative permittivity, i.e., high-k dielectrics, have become the standard insulators in gate architectures, enhancing the electrical performance of both room temperature and cryogenic electronics. This study delves into the cryogenic (3 K) performance of high-k dielectrics commonly used as gate insulators. We fabricated Al2O3 and HfO2 layers via Atomic Layer Deposition (ALD) and we extrapolated relative permittivity (k) and dielectric strength (E_BD) from AC (100 Hz to 100 kHz) and DC measurements on metal-insulator-metal capacitors. Our findings reveal a strong de"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2407.04501","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2407.04501/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2407.04501","created_at":"2026-07-05T10:07:25.631846+00:00"},{"alias_kind":"arxiv_version","alias_value":"2407.04501v2","created_at":"2026-07-05T10:07:25.631846+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2407.04501","created_at":"2026-07-05T10:07:25.631846+00:00"},{"alias_kind":"pith_short_12","alias_value":"KCSNANHHMRRM","created_at":"2026-07-05T10:07:25.631846+00:00"},{"alias_kind":"pith_short_16","alias_value":"KCSNANHHMRRMGUNK","created_at":"2026-07-05T10:07:25.631846+00:00"},{"alias_kind":"pith_short_8","alias_value":"KCSNANHH","created_at":"2026-07-05T10:07:25.631846+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":1,"internal_anchor_count":0,"sample":[{"citing_arxiv_id":"2411.03995","citing_title":"Impact of surface treatments on the transport properties of germanium 2DHGs","ref_index":35,"is_internal_anchor":false}]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/KCSNANHHMRRMGUNKUAAFHNPJCM","json":"https://pith.science/pith/KCSNANHHMRRMGUNKUAAFHNPJCM.json","graph_json":"https://pith.science/api/pith-number/KCSNANHHMRRMGUNKUAAFHNPJCM/graph.json","events_json":"https://pith.science/api/pith-number/KCSNANHHMRRMGUNKUAAFHNPJCM/events.json","paper":"https://pith.science/paper/KCSNANHH"},"agent_actions":{"view_html":"https://pith.science/pith/KCSNANHHMRRMGUNKUAAFHNPJCM","download_json":"https://pith.science/pith/KCSNANHHMRRMGUNKUAAFHNPJCM.json","view_paper":"https://pith.science/paper/KCSNANHH","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2407.04501&json=true","fetch_graph":"https://pith.science/api/pith-number/KCSNANHHMRRMGUNKUAAFHNPJCM/graph.json","fetch_events":"https://pith.science/api/pith-number/KCSNANHHMRRMGUNKUAAFHNPJCM/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/KCSNANHHMRRMGUNKUAAFHNPJCM/action/timestamp_anchor","attest_storage":"https://pith.science/pith/KCSNANHHMRRMGUNKUAAFHNPJCM/action/storage_attestation","attest_author":"https://pith.science/pith/KCSNANHHMRRMGUNKUAAFHNPJCM/action/author_attestation","sign_citation":"https://pith.science/pith/KCSNANHHMRRMGUNKUAAFHNPJCM/action/citation_signature","submit_replication":"https://pith.science/pith/KCSNANHHMRRMGUNKUAAFHNPJCM/action/replication_record"}},"created_at":"2026-07-05T10:07:25.631846+00:00","updated_at":"2026-07-05T10:07:25.631846+00:00"}