{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2018:KEPUR4XNWHV43BAK7TLICYC6QT","short_pith_number":"pith:KEPUR4XN","schema_version":"1.0","canonical_sha256":"511f48f2edb1ebcd840afcd681605e84d362a1bf21be5ad1d3d669b6cb533b3e","source":{"kind":"arxiv","id":"1811.07298","version":1},"attestation_state":"computed","paper":{"title":"Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"John Nguyen, Yize Stephanie Li","submitted_at":"2018-11-18T09:08:02Z","abstract_excerpt":"The development of Si-compatible active photonic devices is a high priority in computer and modern electronics industry. Ge is compatible with Si and is a promising light emission material. Nearly all Ge-on-Si materials reported so far were grown using toxic precursor gases. Here we demonstrate the creation of Ge films on Si substrates through physical vapor deposition of toxin-free solid Ge sources. Structural characterization indicates that a high tensile strain is introduced in the Ge film during the deposition process. We attribute the presence of such a tensile strain to the difference in"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1811.07298","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2018-11-18T09:08:02Z","cross_cats_sorted":["cond-mat.mes-hall"],"title_canon_sha256":"149ee3d89a0563f5aabfde339bac3fa6640d08bc4d956ceb329973806945f14b","abstract_canon_sha256":"a98938b2a90ac5a887a9e4f058d3864e0bb2217db4ca1aa14312b72236a5ec96"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T00:00:28.346037Z","signature_b64":"QNESKyXGQACP/SKlaeTbLbeSCjUWXxrEQX8lDjAtN8/lCvWNuHsGXx4pAxe9c2fJlIGLnL665mRnlu1eEEgeDg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"511f48f2edb1ebcd840afcd681605e84d362a1bf21be5ad1d3d669b6cb533b3e","last_reissued_at":"2026-05-18T00:00:28.345535Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T00:00:28.345535Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"John Nguyen, Yize Stephanie Li","submitted_at":"2018-11-18T09:08:02Z","abstract_excerpt":"The development of Si-compatible active photonic devices is a high priority in computer and modern electronics industry. Ge is compatible with Si and is a promising light emission material. Nearly all Ge-on-Si materials reported so far were grown using toxic precursor gases. Here we demonstrate the creation of Ge films on Si substrates through physical vapor deposition of toxin-free solid Ge sources. Structural characterization indicates that a high tensile strain is introduced in the Ge film during the deposition process. We attribute the presence of such a tensile strain to the difference in"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1811.07298","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1811.07298","created_at":"2026-05-18T00:00:28.345614+00:00"},{"alias_kind":"arxiv_version","alias_value":"1811.07298v1","created_at":"2026-05-18T00:00:28.345614+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1811.07298","created_at":"2026-05-18T00:00:28.345614+00:00"},{"alias_kind":"pith_short_12","alias_value":"KEPUR4XNWHV4","created_at":"2026-05-18T12:32:33.847187+00:00"},{"alias_kind":"pith_short_16","alias_value":"KEPUR4XNWHV43BAK","created_at":"2026-05-18T12:32:33.847187+00:00"},{"alias_kind":"pith_short_8","alias_value":"KEPUR4XN","created_at":"2026-05-18T12:32:33.847187+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/KEPUR4XNWHV43BAK7TLICYC6QT","json":"https://pith.science/pith/KEPUR4XNWHV43BAK7TLICYC6QT.json","graph_json":"https://pith.science/api/pith-number/KEPUR4XNWHV43BAK7TLICYC6QT/graph.json","events_json":"https://pith.science/api/pith-number/KEPUR4XNWHV43BAK7TLICYC6QT/events.json","paper":"https://pith.science/paper/KEPUR4XN"},"agent_actions":{"view_html":"https://pith.science/pith/KEPUR4XNWHV43BAK7TLICYC6QT","download_json":"https://pith.science/pith/KEPUR4XNWHV43BAK7TLICYC6QT.json","view_paper":"https://pith.science/paper/KEPUR4XN","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1811.07298&json=true","fetch_graph":"https://pith.science/api/pith-number/KEPUR4XNWHV43BAK7TLICYC6QT/graph.json","fetch_events":"https://pith.science/api/pith-number/KEPUR4XNWHV43BAK7TLICYC6QT/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/KEPUR4XNWHV43BAK7TLICYC6QT/action/timestamp_anchor","attest_storage":"https://pith.science/pith/KEPUR4XNWHV43BAK7TLICYC6QT/action/storage_attestation","attest_author":"https://pith.science/pith/KEPUR4XNWHV43BAK7TLICYC6QT/action/author_attestation","sign_citation":"https://pith.science/pith/KEPUR4XNWHV43BAK7TLICYC6QT/action/citation_signature","submit_replication":"https://pith.science/pith/KEPUR4XNWHV43BAK7TLICYC6QT/action/replication_record"}},"created_at":"2026-05-18T00:00:28.345614+00:00","updated_at":"2026-05-18T00:00:28.345614+00:00"}