{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2015:KFZSC4IUGZLS5PKVDWL53AWIKM","short_pith_number":"pith:KFZSC4IU","schema_version":"1.0","canonical_sha256":"517321711436572ebd551d97dd82c8531ba0445fdd9d38273871207b6376d97f","source":{"kind":"arxiv","id":"1507.04719","version":2},"attestation_state":"computed","paper":{"title":"Electrical analysis of hysteresis in solution processed silicon nanowire field effect transistors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"Advanced Technology Institute, C. Opoku, Guildford, K. Prabha Rajeev, M. Constantinou, M. Shkunov (Electronic Engineering, UK), University of Surrey, V. Stolojan","submitted_at":"2015-07-16T19:27:56Z","abstract_excerpt":"Silicon nanowires (Si NW) are ideal candidates for solution processable field effect transistors (FETs). The interface between the nanowire channel and the gate dielectric plays a crucial role in the FET performance, and it can be responsible for unwanted effects such as hysteresis of the I-V characteristics due to threshold voltage shift when the gate voltage is applied. Using gate-voltage bias stress measurements we show that a large hysteresis of up to 40V in Si NW FETs with SiO2 dielectric is mainly due to the holes traps at the nanowire/SiO2 interface. An approach for reducing this hyster"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1507.04719","kind":"arxiv","version":2},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mes-hall","submitted_at":"2015-07-16T19:27:56Z","cross_cats_sorted":["cond-mat.mtrl-sci"],"title_canon_sha256":"465eba351514407555e4d941e2bd2d9f903acc9cab4ba34f6fc72ae3ffb1e267","abstract_canon_sha256":"76b43f8d9b91788a9c5fa2969800384a3e30fb666c95c715bbc13a652960040f"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T01:36:03.351901Z","signature_b64":"zk3mwzJgnY7NxqI1lvZXGAj3e5La7/dT9HwutUlxw2hgzFDcZ7lKu+nZge/Lced7UterLRSitWGCMvdp1FgRCw==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"517321711436572ebd551d97dd82c8531ba0445fdd9d38273871207b6376d97f","last_reissued_at":"2026-05-18T01:36:03.351186Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T01:36:03.351186Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Electrical analysis of hysteresis in solution processed silicon nanowire field effect transistors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"Advanced Technology Institute, C. Opoku, Guildford, K. Prabha Rajeev, M. Constantinou, M. Shkunov (Electronic Engineering, UK), University of Surrey, V. Stolojan","submitted_at":"2015-07-16T19:27:56Z","abstract_excerpt":"Silicon nanowires (Si NW) are ideal candidates for solution processable field effect transistors (FETs). The interface between the nanowire channel and the gate dielectric plays a crucial role in the FET performance, and it can be responsible for unwanted effects such as hysteresis of the I-V characteristics due to threshold voltage shift when the gate voltage is applied. Using gate-voltage bias stress measurements we show that a large hysteresis of up to 40V in Si NW FETs with SiO2 dielectric is mainly due to the holes traps at the nanowire/SiO2 interface. An approach for reducing this hyster"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1507.04719","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1507.04719","created_at":"2026-05-18T01:36:03.351309+00:00"},{"alias_kind":"arxiv_version","alias_value":"1507.04719v2","created_at":"2026-05-18T01:36:03.351309+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1507.04719","created_at":"2026-05-18T01:36:03.351309+00:00"},{"alias_kind":"pith_short_12","alias_value":"KFZSC4IUGZLS","created_at":"2026-05-18T12:29:27.538025+00:00"},{"alias_kind":"pith_short_16","alias_value":"KFZSC4IUGZLS5PKV","created_at":"2026-05-18T12:29:27.538025+00:00"},{"alias_kind":"pith_short_8","alias_value":"KFZSC4IU","created_at":"2026-05-18T12:29:27.538025+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/KFZSC4IUGZLS5PKVDWL53AWIKM","json":"https://pith.science/pith/KFZSC4IUGZLS5PKVDWL53AWIKM.json","graph_json":"https://pith.science/api/pith-number/KFZSC4IUGZLS5PKVDWL53AWIKM/graph.json","events_json":"https://pith.science/api/pith-number/KFZSC4IUGZLS5PKVDWL53AWIKM/events.json","paper":"https://pith.science/paper/KFZSC4IU"},"agent_actions":{"view_html":"https://pith.science/pith/KFZSC4IUGZLS5PKVDWL53AWIKM","download_json":"https://pith.science/pith/KFZSC4IUGZLS5PKVDWL53AWIKM.json","view_paper":"https://pith.science/paper/KFZSC4IU","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1507.04719&json=true","fetch_graph":"https://pith.science/api/pith-number/KFZSC4IUGZLS5PKVDWL53AWIKM/graph.json","fetch_events":"https://pith.science/api/pith-number/KFZSC4IUGZLS5PKVDWL53AWIKM/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/KFZSC4IUGZLS5PKVDWL53AWIKM/action/timestamp_anchor","attest_storage":"https://pith.science/pith/KFZSC4IUGZLS5PKVDWL53AWIKM/action/storage_attestation","attest_author":"https://pith.science/pith/KFZSC4IUGZLS5PKVDWL53AWIKM/action/author_attestation","sign_citation":"https://pith.science/pith/KFZSC4IUGZLS5PKVDWL53AWIKM/action/citation_signature","submit_replication":"https://pith.science/pith/KFZSC4IUGZLS5PKVDWL53AWIKM/action/replication_record"}},"created_at":"2026-05-18T01:36:03.351309+00:00","updated_at":"2026-05-18T01:36:03.351309+00:00"}