{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2013:L6M4CTL5WEADRFP6R6BH2L4MBA","short_pith_number":"pith:L6M4CTL5","schema_version":"1.0","canonical_sha256":"5f99c14d7db1003895fe8f827d2f8c0828a6789bcc29bbf5a521e54865fa2c41","source":{"kind":"arxiv","id":"1309.1615","version":1},"attestation_state":"computed","paper":{"title":"Influence of homo-buffer layer on stress control of sputtered (Ba0.45,Sr0.55)TiO3 thin films on Pt-Si","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Guillaume Guegan, Mohamed Lamhamdi, Patrick Simon, Virginie Grimal, Y.K. Vayunandana Reddy","submitted_at":"2013-09-06T12:09:09Z","abstract_excerpt":"To engineer strain relaxation of sputtered BST thin films on Pt-Si wafers, homo-buffer layer method was applied to eliminate Pt hillock formation. Thin BST homo-buffer layers were deposited at room temperature and subsequently the main BST layer was deposited at 650{\\deg}C, Pt hillock free BST films were obtained with homo-buffer thickness above 5 nm. Relatively good electrical properties were obtained for BST thin films with 15 and 25 nm homo-buffer layer (T= 30 % at 5V and tan {\\delta}= 0.018)."},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1309.1615","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2013-09-06T12:09:09Z","cross_cats_sorted":[],"title_canon_sha256":"bda75cb7a3d7fb24efff209941f905d564bca8013d78bcbd6ff4bee045b91bce","abstract_canon_sha256":"503f31e53e3941b3bc5120e520a93496769aee96e0733cd0fa1b11de5fcd3fca"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T03:13:59.041150Z","signature_b64":"+wx0qOgpyxkNtejFMRs5iAhxwc9w6f7rKJu0v0CwFfpZDhEF/lFF41+d+tnHMCSX84EnOXNKIfWyt6wj/Ow7Aw==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"5f99c14d7db1003895fe8f827d2f8c0828a6789bcc29bbf5a521e54865fa2c41","last_reissued_at":"2026-05-18T03:13:59.040289Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T03:13:59.040289Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Influence of homo-buffer layer on stress control of sputtered (Ba0.45,Sr0.55)TiO3 thin films on Pt-Si","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Guillaume Guegan, Mohamed Lamhamdi, Patrick Simon, Virginie Grimal, Y.K. Vayunandana Reddy","submitted_at":"2013-09-06T12:09:09Z","abstract_excerpt":"To engineer strain relaxation of sputtered BST thin films on Pt-Si wafers, homo-buffer layer method was applied to eliminate Pt hillock formation. Thin BST homo-buffer layers were deposited at room temperature and subsequently the main BST layer was deposited at 650{\\deg}C, Pt hillock free BST films were obtained with homo-buffer thickness above 5 nm. Relatively good electrical properties were obtained for BST thin films with 15 and 25 nm homo-buffer layer (T= 30 % at 5V and tan {\\delta}= 0.018)."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1309.1615","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1309.1615","created_at":"2026-05-18T03:13:59.040443+00:00"},{"alias_kind":"arxiv_version","alias_value":"1309.1615v1","created_at":"2026-05-18T03:13:59.040443+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1309.1615","created_at":"2026-05-18T03:13:59.040443+00:00"},{"alias_kind":"pith_short_12","alias_value":"L6M4CTL5WEAD","created_at":"2026-05-18T12:27:51.066281+00:00"},{"alias_kind":"pith_short_16","alias_value":"L6M4CTL5WEADRFP6","created_at":"2026-05-18T12:27:51.066281+00:00"},{"alias_kind":"pith_short_8","alias_value":"L6M4CTL5","created_at":"2026-05-18T12:27:51.066281+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/L6M4CTL5WEADRFP6R6BH2L4MBA","json":"https://pith.science/pith/L6M4CTL5WEADRFP6R6BH2L4MBA.json","graph_json":"https://pith.science/api/pith-number/L6M4CTL5WEADRFP6R6BH2L4MBA/graph.json","events_json":"https://pith.science/api/pith-number/L6M4CTL5WEADRFP6R6BH2L4MBA/events.json","paper":"https://pith.science/paper/L6M4CTL5"},"agent_actions":{"view_html":"https://pith.science/pith/L6M4CTL5WEADRFP6R6BH2L4MBA","download_json":"https://pith.science/pith/L6M4CTL5WEADRFP6R6BH2L4MBA.json","view_paper":"https://pith.science/paper/L6M4CTL5","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1309.1615&json=true","fetch_graph":"https://pith.science/api/pith-number/L6M4CTL5WEADRFP6R6BH2L4MBA/graph.json","fetch_events":"https://pith.science/api/pith-number/L6M4CTL5WEADRFP6R6BH2L4MBA/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/L6M4CTL5WEADRFP6R6BH2L4MBA/action/timestamp_anchor","attest_storage":"https://pith.science/pith/L6M4CTL5WEADRFP6R6BH2L4MBA/action/storage_attestation","attest_author":"https://pith.science/pith/L6M4CTL5WEADRFP6R6BH2L4MBA/action/author_attestation","sign_citation":"https://pith.science/pith/L6M4CTL5WEADRFP6R6BH2L4MBA/action/citation_signature","submit_replication":"https://pith.science/pith/L6M4CTL5WEADRFP6R6BH2L4MBA/action/replication_record"}},"created_at":"2026-05-18T03:13:59.040443+00:00","updated_at":"2026-05-18T03:13:59.040443+00:00"}