{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2011:LELWSZSYDQUFUNPWHL67L7TM5Q","short_pith_number":"pith:LELWSZSY","schema_version":"1.0","canonical_sha256":"59176966581c285a35f63afdf5fe6cec12605abc478bd8622c55ce2607ba7026","source":{"kind":"arxiv","id":"1112.4397","version":1},"attestation_state":"computed","paper":{"title":"MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Han Liu, Peide D. Ye","submitted_at":"2011-12-19T16:36:33Z","abstract_excerpt":"We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on two-dimensional (2D) layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as top-gate dielectric. Our C-V study of MOSFET structures shows good interface between 2D MoS2 crystal and ALD Al2O3. Maximum drain currents using back-gates and top-gates are measured to be 7.07mA/mm and 6.42mA/mm at Vds=2V with a channel width of 3 {\\mu}m, a channel length of 9 {\\mu}m, and a top-gate length of 3 {\\mu}m. We achieve the highest field-effect mobility of electrons using back-ga"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1112.4397","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2011-12-19T16:36:33Z","cross_cats_sorted":[],"title_canon_sha256":"64686d5c7c776f155670544de01e97963529bd01b685a62755091a1309e22948","abstract_canon_sha256":"f16845731ce72d46f55065b41d72dd4b6c84c99449eb9136212b6865f0edd4af"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T03:05:44.909159Z","signature_b64":"xHrQAT8uygHsdi/hpIOFa16rysFUnvAYQyOd8E54alfyzsC9FlonfwzTFhxXaMGVOqpyNXvvdyYd8GKXUOcqAQ==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"59176966581c285a35f63afdf5fe6cec12605abc478bd8622c55ce2607ba7026","last_reissued_at":"2026-05-18T03:05:44.908619Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T03:05:44.908619Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Han Liu, Peide D. Ye","submitted_at":"2011-12-19T16:36:33Z","abstract_excerpt":"We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on two-dimensional (2D) layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as top-gate dielectric. Our C-V study of MOSFET structures shows good interface between 2D MoS2 crystal and ALD Al2O3. Maximum drain currents using back-gates and top-gates are measured to be 7.07mA/mm and 6.42mA/mm at Vds=2V with a channel width of 3 {\\mu}m, a channel length of 9 {\\mu}m, and a top-gate length of 3 {\\mu}m. We achieve the highest field-effect mobility of electrons using back-ga"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1112.4397","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1112.4397","created_at":"2026-05-18T03:05:44.908705+00:00"},{"alias_kind":"arxiv_version","alias_value":"1112.4397v1","created_at":"2026-05-18T03:05:44.908705+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1112.4397","created_at":"2026-05-18T03:05:44.908705+00:00"},{"alias_kind":"pith_short_12","alias_value":"LELWSZSYDQUF","created_at":"2026-05-18T12:26:34.985390+00:00"},{"alias_kind":"pith_short_16","alias_value":"LELWSZSYDQUFUNPW","created_at":"2026-05-18T12:26:34.985390+00:00"},{"alias_kind":"pith_short_8","alias_value":"LELWSZSY","created_at":"2026-05-18T12:26:34.985390+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/LELWSZSYDQUFUNPWHL67L7TM5Q","json":"https://pith.science/pith/LELWSZSYDQUFUNPWHL67L7TM5Q.json","graph_json":"https://pith.science/api/pith-number/LELWSZSYDQUFUNPWHL67L7TM5Q/graph.json","events_json":"https://pith.science/api/pith-number/LELWSZSYDQUFUNPWHL67L7TM5Q/events.json","paper":"https://pith.science/paper/LELWSZSY"},"agent_actions":{"view_html":"https://pith.science/pith/LELWSZSYDQUFUNPWHL67L7TM5Q","download_json":"https://pith.science/pith/LELWSZSYDQUFUNPWHL67L7TM5Q.json","view_paper":"https://pith.science/paper/LELWSZSY","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1112.4397&json=true","fetch_graph":"https://pith.science/api/pith-number/LELWSZSYDQUFUNPWHL67L7TM5Q/graph.json","fetch_events":"https://pith.science/api/pith-number/LELWSZSYDQUFUNPWHL67L7TM5Q/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/LELWSZSYDQUFUNPWHL67L7TM5Q/action/timestamp_anchor","attest_storage":"https://pith.science/pith/LELWSZSYDQUFUNPWHL67L7TM5Q/action/storage_attestation","attest_author":"https://pith.science/pith/LELWSZSYDQUFUNPWHL67L7TM5Q/action/author_attestation","sign_citation":"https://pith.science/pith/LELWSZSYDQUFUNPWHL67L7TM5Q/action/citation_signature","submit_replication":"https://pith.science/pith/LELWSZSYDQUFUNPWHL67L7TM5Q/action/replication_record"}},"created_at":"2026-05-18T03:05:44.908705+00:00","updated_at":"2026-05-18T03:05:44.908705+00:00"}