{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2024:LFS7QDWVYXSISESN7IN2HP5KSX","short_pith_number":"pith:LFS7QDWV","schema_version":"1.0","canonical_sha256":"5965f80ed5c5e489124dfa1ba3bfaa95efed6fcff8c3f5cba16c55226c3c02d6","source":{"kind":"arxiv","id":"2401.04909","version":1},"attestation_state":"computed","paper":{"title":"Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"A B M Hasan Talukder, Ali Gokirmak, Faruk Dirisaglik, Helena Silva, Md Tashfiq Bin Kashem, Raihan Khan","submitted_at":"2024-01-10T03:30:13Z","abstract_excerpt":"We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ~70-100 nm wide lateral Ge2Sb2Te5 (GST) line cells. The cells were amorphized using 1.5-2.5 V pulses with ~50-100 ns duration leading to ~0.4-1.1 mA peak reset currents resulting in amorphized lengths between ~50 and 700 nm. Resistance drift coefficients in the amorphized cells are calculated using constant voltage measurements starting as fast as within a second after amorphization and for 1 hour duration. Drift coefficients are in the range betwee"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2401.04909","kind":"arxiv","version":1},"metadata":{"license":"http://creativecommons.org/licenses/by/4.0/","primary_cat":"physics.app-ph","submitted_at":"2024-01-10T03:30:13Z","cross_cats_sorted":[],"title_canon_sha256":"42a5147ceb995a8c41b344078f664ebc2bbfb0bb7f64c7d4dd5a85e0589ab5a8","abstract_canon_sha256":"82eb899db838e6cf797ad532f4fe91f45af4f214d5797d4061afef81ca7a840f"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T07:32:00.112205Z","signature_b64":"6wiEUWmFaYODCkEUYq5pL65j4xCOu7iWN0mipwfwKaRu7cMqsZF8sIBXFzoqW8Rn3KM9ujgA57m+3GEADImGBg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"5965f80ed5c5e489124dfa1ba3bfaa95efed6fcff8c3f5cba16c55226c3c02d6","last_reissued_at":"2026-07-05T07:32:00.111704Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T07:32:00.111704Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"A B M Hasan Talukder, Ali Gokirmak, Faruk Dirisaglik, Helena Silva, Md Tashfiq Bin Kashem, Raihan Khan","submitted_at":"2024-01-10T03:30:13Z","abstract_excerpt":"We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ~70-100 nm wide lateral Ge2Sb2Te5 (GST) line cells. The cells were amorphized using 1.5-2.5 V pulses with ~50-100 ns duration leading to ~0.4-1.1 mA peak reset currents resulting in amorphized lengths between ~50 and 700 nm. Resistance drift coefficients in the amorphized cells are calculated using constant voltage measurements starting as fast as within a second after amorphization and for 1 hour duration. Drift coefficients are in the range betwee"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2401.04909","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2401.04909/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2401.04909","created_at":"2026-07-05T07:32:00.111776+00:00"},{"alias_kind":"arxiv_version","alias_value":"2401.04909v1","created_at":"2026-07-05T07:32:00.111776+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2401.04909","created_at":"2026-07-05T07:32:00.111776+00:00"},{"alias_kind":"pith_short_12","alias_value":"LFS7QDWVYXSI","created_at":"2026-07-05T07:32:00.111776+00:00"},{"alias_kind":"pith_short_16","alias_value":"LFS7QDWVYXSISESN","created_at":"2026-07-05T07:32:00.111776+00:00"},{"alias_kind":"pith_short_8","alias_value":"LFS7QDWV","created_at":"2026-07-05T07:32:00.111776+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/LFS7QDWVYXSISESN7IN2HP5KSX","json":"https://pith.science/pith/LFS7QDWVYXSISESN7IN2HP5KSX.json","graph_json":"https://pith.science/api/pith-number/LFS7QDWVYXSISESN7IN2HP5KSX/graph.json","events_json":"https://pith.science/api/pith-number/LFS7QDWVYXSISESN7IN2HP5KSX/events.json","paper":"https://pith.science/paper/LFS7QDWV"},"agent_actions":{"view_html":"https://pith.science/pith/LFS7QDWVYXSISESN7IN2HP5KSX","download_json":"https://pith.science/pith/LFS7QDWVYXSISESN7IN2HP5KSX.json","view_paper":"https://pith.science/paper/LFS7QDWV","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2401.04909&json=true","fetch_graph":"https://pith.science/api/pith-number/LFS7QDWVYXSISESN7IN2HP5KSX/graph.json","fetch_events":"https://pith.science/api/pith-number/LFS7QDWVYXSISESN7IN2HP5KSX/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/LFS7QDWVYXSISESN7IN2HP5KSX/action/timestamp_anchor","attest_storage":"https://pith.science/pith/LFS7QDWVYXSISESN7IN2HP5KSX/action/storage_attestation","attest_author":"https://pith.science/pith/LFS7QDWVYXSISESN7IN2HP5KSX/action/author_attestation","sign_citation":"https://pith.science/pith/LFS7QDWVYXSISESN7IN2HP5KSX/action/citation_signature","submit_replication":"https://pith.science/pith/LFS7QDWVYXSISESN7IN2HP5KSX/action/replication_record"}},"created_at":"2026-07-05T07:32:00.111776+00:00","updated_at":"2026-07-05T07:32:00.111776+00:00"}