{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2022:MBMJMYRAEQITLHIV33YZ32GDRP","short_pith_number":"pith:MBMJMYRA","schema_version":"1.0","canonical_sha256":"60589662202411359d15def19de8c38bfc22917598c0ad8c4c020e239c948aa2","source":{"kind":"arxiv","id":"2202.13614","version":1},"attestation_state":"computed","paper":{"title":"Mg-doping and free-hole properties of hot-wall MOCVD GaN","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Alexis Papamichail, Anelia Kakanakova, Axel R. Persson, Bj\\\"orn Hult, Einar O. Sveinbj\\\"ornsson, Jr-Tai Chen, Muhammad Nawaz, Niklas Rorsman, Per O. {\\AA}. Persson, Plamen P. Paskov, Son Phuong Le, Vallery Stanishev, Vanya Darakchieva","submitted_at":"2022-02-28T08:50:04Z","abstract_excerpt":"The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation in a wide doping range ($2.45\\times{10}^{18}~cm^{-3}$ up to $1.10\\times{10}^{20}~cm^{-3}$) and demonstrate GaN:Mg with low background impurity concentrations under optimized growth conditions. Dopant and impurity levels are discussed in view of Ga supersaturation which provides a unified concept to explain the complexity of growth conditions impact on Mg acce"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2202.13614","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2022-02-28T08:50:04Z","cross_cats_sorted":[],"title_canon_sha256":"09ada2f052b5caf3c23e40ddb7ca2ff652b0fdc3e016f08fc2b7f1a9446c1db4","abstract_canon_sha256":"e6da9811f51ab1282ea24bf10e3dfc8d4d0ca426e1a2bbf1afb930a96fd12d7c"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T08:33:26.234625Z","signature_b64":"2aKQf2GNyqpLI3pZZRfCCTCKNGZH14y9cNLoX0v1CzlKOwMSSkU26WFeciHBzh/nsSYSoqS86uqG8KW4Zlu7BQ==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"60589662202411359d15def19de8c38bfc22917598c0ad8c4c020e239c948aa2","last_reissued_at":"2026-07-05T08:33:26.234098Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T08:33:26.234098Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Mg-doping and free-hole properties of hot-wall MOCVD GaN","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Alexis Papamichail, Anelia Kakanakova, Axel R. Persson, Bj\\\"orn Hult, Einar O. Sveinbj\\\"ornsson, Jr-Tai Chen, Muhammad Nawaz, Niklas Rorsman, Per O. {\\AA}. Persson, Plamen P. Paskov, Son Phuong Le, Vallery Stanishev, Vanya Darakchieva","submitted_at":"2022-02-28T08:50:04Z","abstract_excerpt":"The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation in a wide doping range ($2.45\\times{10}^{18}~cm^{-3}$ up to $1.10\\times{10}^{20}~cm^{-3}$) and demonstrate GaN:Mg with low background impurity concentrations under optimized growth conditions. Dopant and impurity levels are discussed in view of Ga supersaturation which provides a unified concept to explain the complexity of growth conditions impact on Mg acce"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2202.13614","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2202.13614/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2202.13614","created_at":"2026-07-05T08:33:26.234152+00:00"},{"alias_kind":"arxiv_version","alias_value":"2202.13614v1","created_at":"2026-07-05T08:33:26.234152+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2202.13614","created_at":"2026-07-05T08:33:26.234152+00:00"},{"alias_kind":"pith_short_12","alias_value":"MBMJMYRAEQIT","created_at":"2026-07-05T08:33:26.234152+00:00"},{"alias_kind":"pith_short_16","alias_value":"MBMJMYRAEQITLHIV","created_at":"2026-07-05T08:33:26.234152+00:00"},{"alias_kind":"pith_short_8","alias_value":"MBMJMYRA","created_at":"2026-07-05T08:33:26.234152+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/MBMJMYRAEQITLHIV33YZ32GDRP","json":"https://pith.science/pith/MBMJMYRAEQITLHIV33YZ32GDRP.json","graph_json":"https://pith.science/api/pith-number/MBMJMYRAEQITLHIV33YZ32GDRP/graph.json","events_json":"https://pith.science/api/pith-number/MBMJMYRAEQITLHIV33YZ32GDRP/events.json","paper":"https://pith.science/paper/MBMJMYRA"},"agent_actions":{"view_html":"https://pith.science/pith/MBMJMYRAEQITLHIV33YZ32GDRP","download_json":"https://pith.science/pith/MBMJMYRAEQITLHIV33YZ32GDRP.json","view_paper":"https://pith.science/paper/MBMJMYRA","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2202.13614&json=true","fetch_graph":"https://pith.science/api/pith-number/MBMJMYRAEQITLHIV33YZ32GDRP/graph.json","fetch_events":"https://pith.science/api/pith-number/MBMJMYRAEQITLHIV33YZ32GDRP/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/MBMJMYRAEQITLHIV33YZ32GDRP/action/timestamp_anchor","attest_storage":"https://pith.science/pith/MBMJMYRAEQITLHIV33YZ32GDRP/action/storage_attestation","attest_author":"https://pith.science/pith/MBMJMYRAEQITLHIV33YZ32GDRP/action/author_attestation","sign_citation":"https://pith.science/pith/MBMJMYRAEQITLHIV33YZ32GDRP/action/citation_signature","submit_replication":"https://pith.science/pith/MBMJMYRAEQITLHIV33YZ32GDRP/action/replication_record"}},"created_at":"2026-07-05T08:33:26.234152+00:00","updated_at":"2026-07-05T08:33:26.234152+00:00"}