{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2021:MKP46PUK7FB55MADZQCTZOIN4L","short_pith_number":"pith:MKP46PUK","schema_version":"1.0","canonical_sha256":"629fcf3e8af943deb003cc053cb90de2d79572b854188dbdc675d33c41786418","source":{"kind":"arxiv","id":"2103.08806","version":1},"attestation_state":"computed","paper":{"title":"Ferroelectric HfO$_2$ Memory Transistors with High-$\\kappa$ Interfacial Layer and Write Endurance Exceeding $10^{10}$ Cycles","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Ava Jiang Tan, Chenming Hu, Jong-Ho Bae, Li-Chen Wang, Sayeef Salahuddin, Yu-Hung Liao","submitted_at":"2021-03-16T02:28:15Z","abstract_excerpt":"We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding $10^{10}$ cycles. The ferroelectric transistors (FeFETs) incorporate a high-$\\kappa$ interfacial layer (IL) of thermally grown silicon nitride (SiN$_x$) and a thin 4.5 nm layer of Zr-doped FE-HfO$_2$ on a $\\sim$30 nm SOI channel. The device shows a $\\sim$ 1V memory window in a DC sweep of just $\\pm$ 2.5V, and can be programmed and erased with voltage pulses of $V_G= \\pm$ 3V at a pulse width of 250 ns. The device also shows very good retention behavior. These results indicate that appr"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2103.08806","kind":"arxiv","version":1},"metadata":{"license":"http://creativecommons.org/licenses/by/4.0/","primary_cat":"physics.app-ph","submitted_at":"2021-03-16T02:28:15Z","cross_cats_sorted":[],"title_canon_sha256":"3814f5a8e83c3167b9c5bc4567a779fa72c85d62d9a0423d0d49cc655e2ee83e","abstract_canon_sha256":"b77836f66912e98ba553d3902b3b217a3eda4c68c5cd53e06dda1e4968bd2050"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T02:23:31.750579Z","signature_b64":"QvB8q7gA9LZ5THC/NpekmaE8Q1CvT1jAi6ySZNcgLI2tPFJqPekJ2t42Zu34yon8qjUkTgHsVIeJGMyQ7gUuAA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"629fcf3e8af943deb003cc053cb90de2d79572b854188dbdc675d33c41786418","last_reissued_at":"2026-07-05T02:23:31.750218Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T02:23:31.750218Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Ferroelectric HfO$_2$ Memory Transistors with High-$\\kappa$ Interfacial Layer and Write Endurance Exceeding $10^{10}$ Cycles","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Ava Jiang Tan, Chenming Hu, Jong-Ho Bae, Li-Chen Wang, Sayeef Salahuddin, Yu-Hung Liao","submitted_at":"2021-03-16T02:28:15Z","abstract_excerpt":"We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding $10^{10}$ cycles. The ferroelectric transistors (FeFETs) incorporate a high-$\\kappa$ interfacial layer (IL) of thermally grown silicon nitride (SiN$_x$) and a thin 4.5 nm layer of Zr-doped FE-HfO$_2$ on a $\\sim$30 nm SOI channel. The device shows a $\\sim$ 1V memory window in a DC sweep of just $\\pm$ 2.5V, and can be programmed and erased with voltage pulses of $V_G= \\pm$ 3V at a pulse width of 250 ns. The device also shows very good retention behavior. These results indicate that appr"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2103.08806","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2103.08806/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2103.08806","created_at":"2026-07-05T02:23:31.750279+00:00"},{"alias_kind":"arxiv_version","alias_value":"2103.08806v1","created_at":"2026-07-05T02:23:31.750279+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2103.08806","created_at":"2026-07-05T02:23:31.750279+00:00"},{"alias_kind":"pith_short_12","alias_value":"MKP46PUK7FB5","created_at":"2026-07-05T02:23:31.750279+00:00"},{"alias_kind":"pith_short_16","alias_value":"MKP46PUK7FB55MAD","created_at":"2026-07-05T02:23:31.750279+00:00"},{"alias_kind":"pith_short_8","alias_value":"MKP46PUK","created_at":"2026-07-05T02:23:31.750279+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/MKP46PUK7FB55MADZQCTZOIN4L","json":"https://pith.science/pith/MKP46PUK7FB55MADZQCTZOIN4L.json","graph_json":"https://pith.science/api/pith-number/MKP46PUK7FB55MADZQCTZOIN4L/graph.json","events_json":"https://pith.science/api/pith-number/MKP46PUK7FB55MADZQCTZOIN4L/events.json","paper":"https://pith.science/paper/MKP46PUK"},"agent_actions":{"view_html":"https://pith.science/pith/MKP46PUK7FB55MADZQCTZOIN4L","download_json":"https://pith.science/pith/MKP46PUK7FB55MADZQCTZOIN4L.json","view_paper":"https://pith.science/paper/MKP46PUK","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2103.08806&json=true","fetch_graph":"https://pith.science/api/pith-number/MKP46PUK7FB55MADZQCTZOIN4L/graph.json","fetch_events":"https://pith.science/api/pith-number/MKP46PUK7FB55MADZQCTZOIN4L/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/MKP46PUK7FB55MADZQCTZOIN4L/action/timestamp_anchor","attest_storage":"https://pith.science/pith/MKP46PUK7FB55MADZQCTZOIN4L/action/storage_attestation","attest_author":"https://pith.science/pith/MKP46PUK7FB55MADZQCTZOIN4L/action/author_attestation","sign_citation":"https://pith.science/pith/MKP46PUK7FB55MADZQCTZOIN4L/action/citation_signature","submit_replication":"https://pith.science/pith/MKP46PUK7FB55MADZQCTZOIN4L/action/replication_record"}},"created_at":"2026-07-05T02:23:31.750279+00:00","updated_at":"2026-07-05T02:23:31.750279+00:00"}