{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2022:MNVFCL3W7QOTIIUA3YWRE27JZE","short_pith_number":"pith:MNVFCL3W","schema_version":"1.0","canonical_sha256":"636a512f76fc1d342280de2d126be9c921e610df754bf47042e7f925b5bc8e7f","source":{"kind":"arxiv","id":"2202.08090","version":2},"attestation_state":"computed","paper":{"title":"Wafer-scale low-disorder 2DEG in $^{28}$Si/SiGe without an epitaxial Si cap","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Amir Sammak, Brian Paquelet Wuetz, Davide Degli Esposti, Giordano Scappucci, Mario Lodari, Viviana Fezzi","submitted_at":"2022-02-16T14:23:36Z","abstract_excerpt":"We grow $^{28}$Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtained by exposing the SiGe barrier to dichlorosilane at 500 {\\deg}C. As a result, $^{28}$Si/SiGe heterostructure field-effect transistors feature a sharp semiconductor/dielectric interface and support a two-dimensional electron gas with enhanced and more uniform transport properties across a 100 mm wafer. At T = 1.7 K we measure a high mean mobility of (1.8$\\pm$0.5)$\\times$10$^5$ cm$^2$/Vs and a low mean percolation den"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2202.08090","kind":"arxiv","version":2},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mes-hall","submitted_at":"2022-02-16T14:23:36Z","cross_cats_sorted":[],"title_canon_sha256":"e3f0c9a0c7926d50f5ce586488a07a4fb6b55a5dfa24e4b5b94ec3390ca72901","abstract_canon_sha256":"9f1a8dda715700b305cc6f9fa308ba4d1014bfb27889a85ace7edb2c7447c166"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T04:24:16.868848Z","signature_b64":"9vgB6jKYMx+9ZVQWMDE34npje+VwmYHdUATFxG0gIdr9znRYDdiCM7yDEbXo4hRM2nktzASn2xNE89DOhiiXAg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"636a512f76fc1d342280de2d126be9c921e610df754bf47042e7f925b5bc8e7f","last_reissued_at":"2026-07-05T04:24:16.868406Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T04:24:16.868406Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Wafer-scale low-disorder 2DEG in $^{28}$Si/SiGe without an epitaxial Si cap","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Amir Sammak, Brian Paquelet Wuetz, Davide Degli Esposti, Giordano Scappucci, Mario Lodari, Viviana Fezzi","submitted_at":"2022-02-16T14:23:36Z","abstract_excerpt":"We grow $^{28}$Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtained by exposing the SiGe barrier to dichlorosilane at 500 {\\deg}C. As a result, $^{28}$Si/SiGe heterostructure field-effect transistors feature a sharp semiconductor/dielectric interface and support a two-dimensional electron gas with enhanced and more uniform transport properties across a 100 mm wafer. At T = 1.7 K we measure a high mean mobility of (1.8$\\pm$0.5)$\\times$10$^5$ cm$^2$/Vs and a low mean percolation den"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2202.08090","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2202.08090/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2202.08090","created_at":"2026-07-05T04:24:16.868470+00:00"},{"alias_kind":"arxiv_version","alias_value":"2202.08090v2","created_at":"2026-07-05T04:24:16.868470+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2202.08090","created_at":"2026-07-05T04:24:16.868470+00:00"},{"alias_kind":"pith_short_12","alias_value":"MNVFCL3W7QOT","created_at":"2026-07-05T04:24:16.868470+00:00"},{"alias_kind":"pith_short_16","alias_value":"MNVFCL3W7QOTIIUA","created_at":"2026-07-05T04:24:16.868470+00:00"},{"alias_kind":"pith_short_8","alias_value":"MNVFCL3W","created_at":"2026-07-05T04:24:16.868470+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/MNVFCL3W7QOTIIUA3YWRE27JZE","json":"https://pith.science/pith/MNVFCL3W7QOTIIUA3YWRE27JZE.json","graph_json":"https://pith.science/api/pith-number/MNVFCL3W7QOTIIUA3YWRE27JZE/graph.json","events_json":"https://pith.science/api/pith-number/MNVFCL3W7QOTIIUA3YWRE27JZE/events.json","paper":"https://pith.science/paper/MNVFCL3W"},"agent_actions":{"view_html":"https://pith.science/pith/MNVFCL3W7QOTIIUA3YWRE27JZE","download_json":"https://pith.science/pith/MNVFCL3W7QOTIIUA3YWRE27JZE.json","view_paper":"https://pith.science/paper/MNVFCL3W","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2202.08090&json=true","fetch_graph":"https://pith.science/api/pith-number/MNVFCL3W7QOTIIUA3YWRE27JZE/graph.json","fetch_events":"https://pith.science/api/pith-number/MNVFCL3W7QOTIIUA3YWRE27JZE/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/MNVFCL3W7QOTIIUA3YWRE27JZE/action/timestamp_anchor","attest_storage":"https://pith.science/pith/MNVFCL3W7QOTIIUA3YWRE27JZE/action/storage_attestation","attest_author":"https://pith.science/pith/MNVFCL3W7QOTIIUA3YWRE27JZE/action/author_attestation","sign_citation":"https://pith.science/pith/MNVFCL3W7QOTIIUA3YWRE27JZE/action/citation_signature","submit_replication":"https://pith.science/pith/MNVFCL3W7QOTIIUA3YWRE27JZE/action/replication_record"}},"created_at":"2026-07-05T04:24:16.868470+00:00","updated_at":"2026-07-05T04:24:16.868470+00:00"}