{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2011:MZQA7DMSNSNAW374RQW7YH77RB","short_pith_number":"pith:MZQA7DMS","schema_version":"1.0","canonical_sha256":"66600f8d926c9a0b6ffc8c2dfc1fff884191f2de96b83747e9e623ab49ecf000","source":{"kind":"arxiv","id":"1101.4712","version":1},"attestation_state":"computed","paper":{"title":"Graphene field-effect transistors based on boron nitride gate dielectrics","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A. F. Young, C. R. Dean, I. Meric, J. Hone, K. L. Shepard, P. Kim","submitted_at":"2011-01-25T03:46:55Z","abstract_excerpt":"Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current saturation down to 500 nm channel lengths with intrinsic transconductance values above 400 mS/mm. The work demonstrates the favorable properties of using h-BN as a gate dielectric for graphene FETs."},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1101.4712","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mes-hall","submitted_at":"2011-01-25T03:46:55Z","cross_cats_sorted":[],"title_canon_sha256":"2271d7d26bfdc0a1105df7f4839a8753fcb943bf0eb1eaebb006e47ac874cfee","abstract_canon_sha256":"993822d61c3bfff62d658e039a311168b00bbd00721c8059e5e6100a54caf16f"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T00:57:57.492148Z","signature_b64":"M4Jh6BSzrZKGvXoinqGB8/G7uEpLesluxRYhz+IEVzAPPycex0sA5cUlnaMI+2pFIpn3jEDrkKmoawRK78rQAg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"66600f8d926c9a0b6ffc8c2dfc1fff884191f2de96b83747e9e623ab49ecf000","last_reissued_at":"2026-05-18T00:57:57.491773Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T00:57:57.491773Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Graphene field-effect transistors based on boron nitride gate dielectrics","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A. F. Young, C. R. Dean, I. Meric, J. Hone, K. L. Shepard, P. Kim","submitted_at":"2011-01-25T03:46:55Z","abstract_excerpt":"Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current saturation down to 500 nm channel lengths with intrinsic transconductance values above 400 mS/mm. The work demonstrates the favorable properties of using h-BN as a gate dielectric for graphene FETs."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1101.4712","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1101.4712","created_at":"2026-05-18T00:57:57.491832+00:00"},{"alias_kind":"arxiv_version","alias_value":"1101.4712v1","created_at":"2026-05-18T00:57:57.491832+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1101.4712","created_at":"2026-05-18T00:57:57.491832+00:00"},{"alias_kind":"pith_short_12","alias_value":"MZQA7DMSNSNA","created_at":"2026-05-18T12:26:37.096874+00:00"},{"alias_kind":"pith_short_16","alias_value":"MZQA7DMSNSNAW374","created_at":"2026-05-18T12:26:37.096874+00:00"},{"alias_kind":"pith_short_8","alias_value":"MZQA7DMS","created_at":"2026-05-18T12:26:37.096874+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/MZQA7DMSNSNAW374RQW7YH77RB","json":"https://pith.science/pith/MZQA7DMSNSNAW374RQW7YH77RB.json","graph_json":"https://pith.science/api/pith-number/MZQA7DMSNSNAW374RQW7YH77RB/graph.json","events_json":"https://pith.science/api/pith-number/MZQA7DMSNSNAW374RQW7YH77RB/events.json","paper":"https://pith.science/paper/MZQA7DMS"},"agent_actions":{"view_html":"https://pith.science/pith/MZQA7DMSNSNAW374RQW7YH77RB","download_json":"https://pith.science/pith/MZQA7DMSNSNAW374RQW7YH77RB.json","view_paper":"https://pith.science/paper/MZQA7DMS","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1101.4712&json=true","fetch_graph":"https://pith.science/api/pith-number/MZQA7DMSNSNAW374RQW7YH77RB/graph.json","fetch_events":"https://pith.science/api/pith-number/MZQA7DMSNSNAW374RQW7YH77RB/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/MZQA7DMSNSNAW374RQW7YH77RB/action/timestamp_anchor","attest_storage":"https://pith.science/pith/MZQA7DMSNSNAW374RQW7YH77RB/action/storage_attestation","attest_author":"https://pith.science/pith/MZQA7DMSNSNAW374RQW7YH77RB/action/author_attestation","sign_citation":"https://pith.science/pith/MZQA7DMSNSNAW374RQW7YH77RB/action/citation_signature","submit_replication":"https://pith.science/pith/MZQA7DMSNSNAW374RQW7YH77RB/action/replication_record"}},"created_at":"2026-05-18T00:57:57.491832+00:00","updated_at":"2026-05-18T00:57:57.491832+00:00"}