{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2021:NZHQM5HIIJUSFE7EO2ZIJCXUEK","short_pith_number":"pith:NZHQM5HI","schema_version":"1.0","canonical_sha256":"6e4f0674e842692293e476b2848af422b2811ce2cff7379c7ce9a824bd5ea044","source":{"kind":"arxiv","id":"2102.05982","version":2},"attestation_state":"computed","paper":{"title":"High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Kenji Watanabe, Masataka Imura, Taisuke Kageura, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide, Yosuke Sasama","submitted_at":"2021-02-11T12:59:09Z","abstract_excerpt":"Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importance in power and high-frequency electronics. However, the poor performance of p-channel transistors compared with that of n-channel transistors has constrained the production of energy-efficient complimentary circuits with integrated n- and p-channel transistors. The p-type surface conductivity of hydrogen-terminated diamond offers great potential for solving this problem, but surface transfer doping, which is commonl"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2102.05982","kind":"arxiv","version":2},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2021-02-11T12:59:09Z","cross_cats_sorted":["cond-mat.mes-hall"],"title_canon_sha256":"98d29407c404b44ec92a5b8b71e2e912c2194f39e1d31dca2ac9b182a8127ca4","abstract_canon_sha256":"b8fa8e0eae1ef1b7ff125bda3c6eef06f1d29b839d6bc5795bbeac8844dc5e6f"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T03:53:46.706944Z","signature_b64":"CfadI0MQa0cXasofSF2t5FofR5CxxWXyIRpqviW0uMqmHk4mKyXZT38J/3h23CdPyKO+w/vXu8LDpMNWDL0bCA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"6e4f0674e842692293e476b2848af422b2811ce2cff7379c7ce9a824bd5ea044","last_reissued_at":"2026-07-05T03:53:46.706462Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T03:53:46.706462Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Kenji Watanabe, Masataka Imura, Taisuke Kageura, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide, Yosuke Sasama","submitted_at":"2021-02-11T12:59:09Z","abstract_excerpt":"Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importance in power and high-frequency electronics. However, the poor performance of p-channel transistors compared with that of n-channel transistors has constrained the production of energy-efficient complimentary circuits with integrated n- and p-channel transistors. The p-type surface conductivity of hydrogen-terminated diamond offers great potential for solving this problem, but surface transfer doping, which is commonl"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2102.05982","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2102.05982/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2102.05982","created_at":"2026-07-05T03:53:46.706522+00:00"},{"alias_kind":"arxiv_version","alias_value":"2102.05982v2","created_at":"2026-07-05T03:53:46.706522+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2102.05982","created_at":"2026-07-05T03:53:46.706522+00:00"},{"alias_kind":"pith_short_12","alias_value":"NZHQM5HIIJUS","created_at":"2026-07-05T03:53:46.706522+00:00"},{"alias_kind":"pith_short_16","alias_value":"NZHQM5HIIJUSFE7E","created_at":"2026-07-05T03:53:46.706522+00:00"},{"alias_kind":"pith_short_8","alias_value":"NZHQM5HI","created_at":"2026-07-05T03:53:46.706522+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":1,"internal_anchor_count":0,"sample":[{"citing_arxiv_id":"2605.22032","citing_title":"High-field Magnetotransport Studies of Surface Conducting Diamonds","ref_index":36,"is_internal_anchor":false}]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/NZHQM5HIIJUSFE7EO2ZIJCXUEK","json":"https://pith.science/pith/NZHQM5HIIJUSFE7EO2ZIJCXUEK.json","graph_json":"https://pith.science/api/pith-number/NZHQM5HIIJUSFE7EO2ZIJCXUEK/graph.json","events_json":"https://pith.science/api/pith-number/NZHQM5HIIJUSFE7EO2ZIJCXUEK/events.json","paper":"https://pith.science/paper/NZHQM5HI"},"agent_actions":{"view_html":"https://pith.science/pith/NZHQM5HIIJUSFE7EO2ZIJCXUEK","download_json":"https://pith.science/pith/NZHQM5HIIJUSFE7EO2ZIJCXUEK.json","view_paper":"https://pith.science/paper/NZHQM5HI","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2102.05982&json=true","fetch_graph":"https://pith.science/api/pith-number/NZHQM5HIIJUSFE7EO2ZIJCXUEK/graph.json","fetch_events":"https://pith.science/api/pith-number/NZHQM5HIIJUSFE7EO2ZIJCXUEK/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/NZHQM5HIIJUSFE7EO2ZIJCXUEK/action/timestamp_anchor","attest_storage":"https://pith.science/pith/NZHQM5HIIJUSFE7EO2ZIJCXUEK/action/storage_attestation","attest_author":"https://pith.science/pith/NZHQM5HIIJUSFE7EO2ZIJCXUEK/action/author_attestation","sign_citation":"https://pith.science/pith/NZHQM5HIIJUSFE7EO2ZIJCXUEK/action/citation_signature","submit_replication":"https://pith.science/pith/NZHQM5HIIJUSFE7EO2ZIJCXUEK/action/replication_record"}},"created_at":"2026-07-05T03:53:46.706522+00:00","updated_at":"2026-07-05T03:53:46.706522+00:00"}