{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2011:PAEZXOVD7OJVC5NZCHPT6H3THA","short_pith_number":"pith:PAEZXOVD","schema_version":"1.0","canonical_sha256":"78099bbaa3fb935175b911df3f1f73381dbb4acce6d9d2ce6fe174dff0a6eae3","source":{"kind":"arxiv","id":"1103.6160","version":1},"attestation_state":"computed","paper":{"title":"Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Alfred Grill, Christopher M. Breslin, Christos Dimitrakopoulos, Jack O. Chu, Mahadevaiyer Krishnan, Robert Wisnieff, Timothy J. McArdle, Yu Zhu, Zihong Liu","submitted_at":"2011-03-31T12:53:52Z","abstract_excerpt":"We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450{\\deg}C in vacuum to create epitaxial multilayer graphene (MLG). Despite the surface roughness and small domain size of the polycrystalline SiC, a conformal MLG film is formed. By planarizing the SiC prior to graphene growth, a reduction of the Raman defect band is observed in the final MLG. The graphene formed on polished SiC films also demonstrates significantly more ordered layer-by-layer growth and increased carrier mobilit"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1103.6160","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2011-03-31T12:53:52Z","cross_cats_sorted":[],"title_canon_sha256":"24e16bab43e0623f349275d1195fb95c1ea0b7a44c20042501df7ba81ea04a28","abstract_canon_sha256":"eab6b8961857b57169df73b035d9c3535f3aabb68cb1fde5de190570ebda2f9a"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T04:25:12.640769Z","signature_b64":"PWQLHzkvcxj5fa+c163m+wNzw4nnspahoR5v5JnO2Co1EqBmN5Gy2sdFMmpNe3d4auzWksZLWSCWIn6oqzVDCA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"78099bbaa3fb935175b911df3f1f73381dbb4acce6d9d2ce6fe174dff0a6eae3","last_reissued_at":"2026-05-18T04:25:12.640109Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T04:25:12.640109Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Alfred Grill, Christopher M. Breslin, Christos Dimitrakopoulos, Jack O. Chu, Mahadevaiyer Krishnan, Robert Wisnieff, Timothy J. McArdle, Yu Zhu, Zihong Liu","submitted_at":"2011-03-31T12:53:52Z","abstract_excerpt":"We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450{\\deg}C in vacuum to create epitaxial multilayer graphene (MLG). Despite the surface roughness and small domain size of the polycrystalline SiC, a conformal MLG film is formed. By planarizing the SiC prior to graphene growth, a reduction of the Raman defect band is observed in the final MLG. The graphene formed on polished SiC films also demonstrates significantly more ordered layer-by-layer growth and increased carrier mobilit"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1103.6160","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1103.6160","created_at":"2026-05-18T04:25:12.640203+00:00"},{"alias_kind":"arxiv_version","alias_value":"1103.6160v1","created_at":"2026-05-18T04:25:12.640203+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1103.6160","created_at":"2026-05-18T04:25:12.640203+00:00"},{"alias_kind":"pith_short_12","alias_value":"PAEZXOVD7OJV","created_at":"2026-05-18T12:26:39.201973+00:00"},{"alias_kind":"pith_short_16","alias_value":"PAEZXOVD7OJVC5NZ","created_at":"2026-05-18T12:26:39.201973+00:00"},{"alias_kind":"pith_short_8","alias_value":"PAEZXOVD","created_at":"2026-05-18T12:26:39.201973+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/PAEZXOVD7OJVC5NZCHPT6H3THA","json":"https://pith.science/pith/PAEZXOVD7OJVC5NZCHPT6H3THA.json","graph_json":"https://pith.science/api/pith-number/PAEZXOVD7OJVC5NZCHPT6H3THA/graph.json","events_json":"https://pith.science/api/pith-number/PAEZXOVD7OJVC5NZCHPT6H3THA/events.json","paper":"https://pith.science/paper/PAEZXOVD"},"agent_actions":{"view_html":"https://pith.science/pith/PAEZXOVD7OJVC5NZCHPT6H3THA","download_json":"https://pith.science/pith/PAEZXOVD7OJVC5NZCHPT6H3THA.json","view_paper":"https://pith.science/paper/PAEZXOVD","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1103.6160&json=true","fetch_graph":"https://pith.science/api/pith-number/PAEZXOVD7OJVC5NZCHPT6H3THA/graph.json","fetch_events":"https://pith.science/api/pith-number/PAEZXOVD7OJVC5NZCHPT6H3THA/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/PAEZXOVD7OJVC5NZCHPT6H3THA/action/timestamp_anchor","attest_storage":"https://pith.science/pith/PAEZXOVD7OJVC5NZCHPT6H3THA/action/storage_attestation","attest_author":"https://pith.science/pith/PAEZXOVD7OJVC5NZCHPT6H3THA/action/author_attestation","sign_citation":"https://pith.science/pith/PAEZXOVD7OJVC5NZCHPT6H3THA/action/citation_signature","submit_replication":"https://pith.science/pith/PAEZXOVD7OJVC5NZCHPT6H3THA/action/replication_record"}},"created_at":"2026-05-18T04:25:12.640203+00:00","updated_at":"2026-05-18T04:25:12.640203+00:00"}