{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2022:PQEX25M5SFZPWL7IRXZBSHO2RH","short_pith_number":"pith:PQEX25M5","schema_version":"1.0","canonical_sha256":"7c097d759d9172fb2fe88df2191dda89f8b816625cbfd005e20ec92e6dbcaf9a","source":{"kind":"arxiv","id":"2206.08819","version":1},"attestation_state":"computed","paper":{"title":"Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams","license":"http://creativecommons.org/licenses/by-nc-nd/4.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"A. Gloskovskii, A. Paszuk, C. Hartmann, C. Schlueter, I. Barto\\v{s}, I. Gordeev, J. Houdkov\\'a, J.P. Hofmann, M. B\\\"ar, M. Nandy, O. Romanyuk, P. Ji\\v{r}\\'i\\v{c}ek, R. F\\'elix, R.G. Wilks, S. Ueda, T. Hannappel, W. Jaegermann","submitted_at":"2022-06-17T14:54:13Z","abstract_excerpt":"The epitaxial growth of the polar GaP(100) on the nonpolar Si(100) substrate suffers from inevitable defects at the antiphase domain boundaries, resulting from mono-atomic steps on the Si(100) surface. Stabilization of Si(100) substrate surfaces with arsenic is a promising technological step enabling the preparation of Si substrates with double atomic steps and reduced density of the APDs. In this paper, 4-50 nm thick GaP epitaxial films were grown on As-terminated Si(100) substrates with different types of doping, miscuts, and As-surface termination by metalorganic vapor phase epitaxy. The Ga"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2206.08819","kind":"arxiv","version":1},"metadata":{"license":"http://creativecommons.org/licenses/by-nc-nd/4.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2022-06-17T14:54:13Z","cross_cats_sorted":[],"title_canon_sha256":"33523d7532a3671a87ce2bc423708bd307c107b810dda61f21ca915c2acbcbde","abstract_canon_sha256":"4ff5271fdb557d902789efe7ce13021d26ff5b24c3b3cf3d1be8779dc866b8f3"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T05:01:25.367685Z","signature_b64":"m1AyDrV32c50cKU0StyPZipbF2svc51i/cOXE1/rZY3C8FXvx+6vhxhRwIIZl9ZY6tkt386sEraiqO5+Cd3RBQ==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"7c097d759d9172fb2fe88df2191dda89f8b816625cbfd005e20ec92e6dbcaf9a","last_reissued_at":"2026-07-05T05:01:25.367107Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T05:01:25.367107Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams","license":"http://creativecommons.org/licenses/by-nc-nd/4.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"A. Gloskovskii, A. Paszuk, C. Hartmann, C. Schlueter, I. Barto\\v{s}, I. Gordeev, J. Houdkov\\'a, J.P. Hofmann, M. B\\\"ar, M. Nandy, O. Romanyuk, P. Ji\\v{r}\\'i\\v{c}ek, R. F\\'elix, R.G. Wilks, S. Ueda, T. Hannappel, W. Jaegermann","submitted_at":"2022-06-17T14:54:13Z","abstract_excerpt":"The epitaxial growth of the polar GaP(100) on the nonpolar Si(100) substrate suffers from inevitable defects at the antiphase domain boundaries, resulting from mono-atomic steps on the Si(100) surface. Stabilization of Si(100) substrate surfaces with arsenic is a promising technological step enabling the preparation of Si substrates with double atomic steps and reduced density of the APDs. In this paper, 4-50 nm thick GaP epitaxial films were grown on As-terminated Si(100) substrates with different types of doping, miscuts, and As-surface termination by metalorganic vapor phase epitaxy. The Ga"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2206.08819","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2206.08819/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2206.08819","created_at":"2026-07-05T05:01:25.367174+00:00"},{"alias_kind":"arxiv_version","alias_value":"2206.08819v1","created_at":"2026-07-05T05:01:25.367174+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2206.08819","created_at":"2026-07-05T05:01:25.367174+00:00"},{"alias_kind":"pith_short_12","alias_value":"PQEX25M5SFZP","created_at":"2026-07-05T05:01:25.367174+00:00"},{"alias_kind":"pith_short_16","alias_value":"PQEX25M5SFZPWL7I","created_at":"2026-07-05T05:01:25.367174+00:00"},{"alias_kind":"pith_short_8","alias_value":"PQEX25M5","created_at":"2026-07-05T05:01:25.367174+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/PQEX25M5SFZPWL7IRXZBSHO2RH","json":"https://pith.science/pith/PQEX25M5SFZPWL7IRXZBSHO2RH.json","graph_json":"https://pith.science/api/pith-number/PQEX25M5SFZPWL7IRXZBSHO2RH/graph.json","events_json":"https://pith.science/api/pith-number/PQEX25M5SFZPWL7IRXZBSHO2RH/events.json","paper":"https://pith.science/paper/PQEX25M5"},"agent_actions":{"view_html":"https://pith.science/pith/PQEX25M5SFZPWL7IRXZBSHO2RH","download_json":"https://pith.science/pith/PQEX25M5SFZPWL7IRXZBSHO2RH.json","view_paper":"https://pith.science/paper/PQEX25M5","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2206.08819&json=true","fetch_graph":"https://pith.science/api/pith-number/PQEX25M5SFZPWL7IRXZBSHO2RH/graph.json","fetch_events":"https://pith.science/api/pith-number/PQEX25M5SFZPWL7IRXZBSHO2RH/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/PQEX25M5SFZPWL7IRXZBSHO2RH/action/timestamp_anchor","attest_storage":"https://pith.science/pith/PQEX25M5SFZPWL7IRXZBSHO2RH/action/storage_attestation","attest_author":"https://pith.science/pith/PQEX25M5SFZPWL7IRXZBSHO2RH/action/author_attestation","sign_citation":"https://pith.science/pith/PQEX25M5SFZPWL7IRXZBSHO2RH/action/citation_signature","submit_replication":"https://pith.science/pith/PQEX25M5SFZPWL7IRXZBSHO2RH/action/replication_record"}},"created_at":"2026-07-05T05:01:25.367174+00:00","updated_at":"2026-07-05T05:01:25.367174+00:00"}