{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2013:QMVKRGPJEXNEAELEWO5YGAZI7J","short_pith_number":"pith:QMVKRGPJ","schema_version":"1.0","canonical_sha256":"832aa899e925da401164b3bb830328fa54bcc979f41fcb5f582fa18b9bc496eb","source":{"kind":"arxiv","id":"1302.2211","version":1},"attestation_state":"computed","paper":{"title":"Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Pawe{\\l} Kempisty, Pawe{\\l} Str\\k{a}k, Stanis{\\l}aw Krukowski","submitted_at":"2013-02-09T09:50:39Z","abstract_excerpt":"Semiconductor surfaces were divided into charge categories, i.e. surface acceptor, donor and neutral ones that are suitable for simulations of their properties within a slab model. The potential profiles, close to the charged surface states, accounting for explicit dependence of the point defects energy, were obtained. A termination charge slab model was formulated and analyzed proving that two control parameters of slab simulations exist: the slope and curvature of electric potential profiles which can be translated into a surface and volumetric charge density. The procedures of slab model pa"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1302.2211","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2013-02-09T09:50:39Z","cross_cats_sorted":[],"title_canon_sha256":"8d352d004c67f9bd5ae40a52f689b00736622eaeecfd71ecccd07802d2f3e88f","abstract_canon_sha256":"5100c453c69c7e68af16a987183a781ee0e2d7606195349c4c32c95300d4241c"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T00:59:59.353260Z","signature_b64":"sz8cLngxJWJqmKX6cyPqcbLTCOjEiAxPypr5WEUG/dLxyqe18z58GcnrCH+4VtGFpOHAP3HRRWYg1/+KwDCTDA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"832aa899e925da401164b3bb830328fa54bcc979f41fcb5f582fa18b9bc496eb","last_reissued_at":"2026-05-18T00:59:59.352400Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T00:59:59.352400Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Pawe{\\l} Kempisty, Pawe{\\l} Str\\k{a}k, Stanis{\\l}aw Krukowski","submitted_at":"2013-02-09T09:50:39Z","abstract_excerpt":"Semiconductor surfaces were divided into charge categories, i.e. surface acceptor, donor and neutral ones that are suitable for simulations of their properties within a slab model. The potential profiles, close to the charged surface states, accounting for explicit dependence of the point defects energy, were obtained. A termination charge slab model was formulated and analyzed proving that two control parameters of slab simulations exist: the slope and curvature of electric potential profiles which can be translated into a surface and volumetric charge density. The procedures of slab model pa"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1302.2211","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1302.2211","created_at":"2026-05-18T00:59:59.352792+00:00"},{"alias_kind":"arxiv_version","alias_value":"1302.2211v1","created_at":"2026-05-18T00:59:59.352792+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1302.2211","created_at":"2026-05-18T00:59:59.352792+00:00"},{"alias_kind":"pith_short_12","alias_value":"QMVKRGPJEXNE","created_at":"2026-05-18T12:27:57.521954+00:00"},{"alias_kind":"pith_short_16","alias_value":"QMVKRGPJEXNEAELE","created_at":"2026-05-18T12:27:57.521954+00:00"},{"alias_kind":"pith_short_8","alias_value":"QMVKRGPJ","created_at":"2026-05-18T12:27:57.521954+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/QMVKRGPJEXNEAELEWO5YGAZI7J","json":"https://pith.science/pith/QMVKRGPJEXNEAELEWO5YGAZI7J.json","graph_json":"https://pith.science/api/pith-number/QMVKRGPJEXNEAELEWO5YGAZI7J/graph.json","events_json":"https://pith.science/api/pith-number/QMVKRGPJEXNEAELEWO5YGAZI7J/events.json","paper":"https://pith.science/paper/QMVKRGPJ"},"agent_actions":{"view_html":"https://pith.science/pith/QMVKRGPJEXNEAELEWO5YGAZI7J","download_json":"https://pith.science/pith/QMVKRGPJEXNEAELEWO5YGAZI7J.json","view_paper":"https://pith.science/paper/QMVKRGPJ","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1302.2211&json=true","fetch_graph":"https://pith.science/api/pith-number/QMVKRGPJEXNEAELEWO5YGAZI7J/graph.json","fetch_events":"https://pith.science/api/pith-number/QMVKRGPJEXNEAELEWO5YGAZI7J/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/QMVKRGPJEXNEAELEWO5YGAZI7J/action/timestamp_anchor","attest_storage":"https://pith.science/pith/QMVKRGPJEXNEAELEWO5YGAZI7J/action/storage_attestation","attest_author":"https://pith.science/pith/QMVKRGPJEXNEAELEWO5YGAZI7J/action/author_attestation","sign_citation":"https://pith.science/pith/QMVKRGPJEXNEAELEWO5YGAZI7J/action/citation_signature","submit_replication":"https://pith.science/pith/QMVKRGPJEXNEAELEWO5YGAZI7J/action/replication_record"}},"created_at":"2026-05-18T00:59:59.352792+00:00","updated_at":"2026-05-18T00:59:59.352792+00:00"}