{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2019:R35NVN3ITAAILXXFNHJN3NY4OF","short_pith_number":"pith:R35NVN3I","schema_version":"1.0","canonical_sha256":"8efadab768980085dee569d2ddb71c7174eb1b37b847fed6f6178c4fe574a165","source":{"kind":"arxiv","id":"1906.05319","version":1},"attestation_state":"computed","paper":{"title":"Fundamental mechanisms of hBN growth by MOVPE","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Aleksandra D\\k{a}browska, Andrzej Wysmo{\\l}ek, Grzegorz Kowalski, Johannes Binder, Krzysztof Paku{\\l}a, Mateusz Tokarczyk, Rafa{\\l} Bo\\.zek, Roman St\\k{e}pniewski","submitted_at":"2019-06-12T18:16:20Z","abstract_excerpt":"Hexagonal boron nitride is a promising material for many applications ranging from deep UV emission to an ideal substrate for other two dimensional crystals. Although efforts towards the growth of wafer-scale, high quality material strongly increased in recent years, the understanding of the actual growth mechanism still remains fragmentary and premature. Here, we unveil fundamental growth mechanisms by investigating the growth of hBN by metalorganic vapor phase epitaxy (MOVPE) in a wide range of growth conditions. The obtained results contradict the widespread opinion about the importance of "},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1906.05319","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2019-06-12T18:16:20Z","cross_cats_sorted":[],"title_canon_sha256":"a99e53060892201a5834e60228b5397e8fb7789e7a493b7cad56c7c567b703d2","abstract_canon_sha256":"a1038e352ddb709e973298bc1c6bec66d0ed3e6f7931a7065a6d89b85dce476a"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-17T23:43:25.599987Z","signature_b64":"4nPNPJb0YiyIXRTiJgkaWMM1rzFUZFwRLrAAA7/0oSEq/V4pVfASr9C3yW2G1hEKWNtDXjd4V3TgIVQNhiNLBQ==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"8efadab768980085dee569d2ddb71c7174eb1b37b847fed6f6178c4fe574a165","last_reissued_at":"2026-05-17T23:43:25.599540Z","signature_status":"signed_v1","first_computed_at":"2026-05-17T23:43:25.599540Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Fundamental mechanisms of hBN growth by MOVPE","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Aleksandra D\\k{a}browska, Andrzej Wysmo{\\l}ek, Grzegorz Kowalski, Johannes Binder, Krzysztof Paku{\\l}a, Mateusz Tokarczyk, Rafa{\\l} Bo\\.zek, Roman St\\k{e}pniewski","submitted_at":"2019-06-12T18:16:20Z","abstract_excerpt":"Hexagonal boron nitride is a promising material for many applications ranging from deep UV emission to an ideal substrate for other two dimensional crystals. Although efforts towards the growth of wafer-scale, high quality material strongly increased in recent years, the understanding of the actual growth mechanism still remains fragmentary and premature. Here, we unveil fundamental growth mechanisms by investigating the growth of hBN by metalorganic vapor phase epitaxy (MOVPE) in a wide range of growth conditions. The obtained results contradict the widespread opinion about the importance of "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1906.05319","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1906.05319","created_at":"2026-05-17T23:43:25.599613+00:00"},{"alias_kind":"arxiv_version","alias_value":"1906.05319v1","created_at":"2026-05-17T23:43:25.599613+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1906.05319","created_at":"2026-05-17T23:43:25.599613+00:00"},{"alias_kind":"pith_short_12","alias_value":"R35NVN3ITAAI","created_at":"2026-05-18T12:33:27.125529+00:00"},{"alias_kind":"pith_short_16","alias_value":"R35NVN3ITAAILXXF","created_at":"2026-05-18T12:33:27.125529+00:00"},{"alias_kind":"pith_short_8","alias_value":"R35NVN3I","created_at":"2026-05-18T12:33:27.125529+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":1,"internal_anchor_count":1,"sample":[{"citing_arxiv_id":"2510.14012","citing_title":"CBVB-nH complexes as prevalent defects in metal-organic vapor-phase epitaxy-grown hexagonal boron nitride","ref_index":26,"is_internal_anchor":true}]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/R35NVN3ITAAILXXFNHJN3NY4OF","json":"https://pith.science/pith/R35NVN3ITAAILXXFNHJN3NY4OF.json","graph_json":"https://pith.science/api/pith-number/R35NVN3ITAAILXXFNHJN3NY4OF/graph.json","events_json":"https://pith.science/api/pith-number/R35NVN3ITAAILXXFNHJN3NY4OF/events.json","paper":"https://pith.science/paper/R35NVN3I"},"agent_actions":{"view_html":"https://pith.science/pith/R35NVN3ITAAILXXFNHJN3NY4OF","download_json":"https://pith.science/pith/R35NVN3ITAAILXXFNHJN3NY4OF.json","view_paper":"https://pith.science/paper/R35NVN3I","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1906.05319&json=true","fetch_graph":"https://pith.science/api/pith-number/R35NVN3ITAAILXXFNHJN3NY4OF/graph.json","fetch_events":"https://pith.science/api/pith-number/R35NVN3ITAAILXXFNHJN3NY4OF/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/R35NVN3ITAAILXXFNHJN3NY4OF/action/timestamp_anchor","attest_storage":"https://pith.science/pith/R35NVN3ITAAILXXFNHJN3NY4OF/action/storage_attestation","attest_author":"https://pith.science/pith/R35NVN3ITAAILXXFNHJN3NY4OF/action/author_attestation","sign_citation":"https://pith.science/pith/R35NVN3ITAAILXXFNHJN3NY4OF/action/citation_signature","submit_replication":"https://pith.science/pith/R35NVN3ITAAILXXFNHJN3NY4OF/action/replication_record"}},"created_at":"2026-05-17T23:43:25.599613+00:00","updated_at":"2026-05-17T23:43:25.599613+00:00"}