{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2020:RQTQUDHPXAIS44DOBK6IYVD6VE","short_pith_number":"pith:RQTQUDHP","schema_version":"1.0","canonical_sha256":"8c270a0cefb8112e706e0abc8c547ea9123f4ab7de6535c40136d9b91ed9ff93","source":{"kind":"arxiv","id":"2007.06182","version":1},"attestation_state":"computed","paper":{"title":"One nanometer HfO$_2$-based ferroelectric tunnel junctions on silicon","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall","physics.app-ph"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Adhiraj Datar, Cheng-Hsiang Hsu, Daewoong Kwon, Jongho Bae, Nirmaan Shanker, Sayeef Salahuddin, Suraj S. Cheema","submitted_at":"2020-07-13T04:35:09Z","abstract_excerpt":"In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, ferroelectric tunnel junctions (FTJs) have emerged as a new resistive switching memory which exploit polarization-dependent tunnel current across a thin ferroelectric barrier. Here we demonstrate FTJs with CMOS-compatible Zr-doped HfO$_2$ (Zr:HfO$_2$) ferroelectric barriers of just 1 nm thickness, grown by atomic layer deposition on silicon. These 1 nm Zr:HfO$_2$ tunnel junctions exhibit large polarization-driven electr"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2007.06182","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2020-07-13T04:35:09Z","cross_cats_sorted":["cond-mat.mes-hall","physics.app-ph"],"title_canon_sha256":"f7079f1ac8aacab004842fd83e87e3f6e3f99815e398e65ce8c64641621d536b","abstract_canon_sha256":"56d24b406f49591dfae32535918a6d79303219484b41e81662f8613b1e2bca64"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T01:18:10.782795Z","signature_b64":"FkNpDFEuYYjmhb0+Qami7D9mjRhidj8qc2P77eQC2PJiXQONHCbrUU/P6HmIjprrjl+b2WnHtXIgGh5u4J9wBg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"8c270a0cefb8112e706e0abc8c547ea9123f4ab7de6535c40136d9b91ed9ff93","last_reissued_at":"2026-07-05T01:18:10.782403Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T01:18:10.782403Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"One nanometer HfO$_2$-based ferroelectric tunnel junctions on silicon","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall","physics.app-ph"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Adhiraj Datar, Cheng-Hsiang Hsu, Daewoong Kwon, Jongho Bae, Nirmaan Shanker, Sayeef Salahuddin, Suraj S. Cheema","submitted_at":"2020-07-13T04:35:09Z","abstract_excerpt":"In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, ferroelectric tunnel junctions (FTJs) have emerged as a new resistive switching memory which exploit polarization-dependent tunnel current across a thin ferroelectric barrier. Here we demonstrate FTJs with CMOS-compatible Zr-doped HfO$_2$ (Zr:HfO$_2$) ferroelectric barriers of just 1 nm thickness, grown by atomic layer deposition on silicon. These 1 nm Zr:HfO$_2$ tunnel junctions exhibit large polarization-driven electr"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2007.06182","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2007.06182/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2007.06182","created_at":"2026-07-05T01:18:10.782461+00:00"},{"alias_kind":"arxiv_version","alias_value":"2007.06182v1","created_at":"2026-07-05T01:18:10.782461+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2007.06182","created_at":"2026-07-05T01:18:10.782461+00:00"},{"alias_kind":"pith_short_12","alias_value":"RQTQUDHPXAIS","created_at":"2026-07-05T01:18:10.782461+00:00"},{"alias_kind":"pith_short_16","alias_value":"RQTQUDHPXAIS44DO","created_at":"2026-07-05T01:18:10.782461+00:00"},{"alias_kind":"pith_short_8","alias_value":"RQTQUDHP","created_at":"2026-07-05T01:18:10.782461+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/RQTQUDHPXAIS44DOBK6IYVD6VE","json":"https://pith.science/pith/RQTQUDHPXAIS44DOBK6IYVD6VE.json","graph_json":"https://pith.science/api/pith-number/RQTQUDHPXAIS44DOBK6IYVD6VE/graph.json","events_json":"https://pith.science/api/pith-number/RQTQUDHPXAIS44DOBK6IYVD6VE/events.json","paper":"https://pith.science/paper/RQTQUDHP"},"agent_actions":{"view_html":"https://pith.science/pith/RQTQUDHPXAIS44DOBK6IYVD6VE","download_json":"https://pith.science/pith/RQTQUDHPXAIS44DOBK6IYVD6VE.json","view_paper":"https://pith.science/paper/RQTQUDHP","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2007.06182&json=true","fetch_graph":"https://pith.science/api/pith-number/RQTQUDHPXAIS44DOBK6IYVD6VE/graph.json","fetch_events":"https://pith.science/api/pith-number/RQTQUDHPXAIS44DOBK6IYVD6VE/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/RQTQUDHPXAIS44DOBK6IYVD6VE/action/timestamp_anchor","attest_storage":"https://pith.science/pith/RQTQUDHPXAIS44DOBK6IYVD6VE/action/storage_attestation","attest_author":"https://pith.science/pith/RQTQUDHPXAIS44DOBK6IYVD6VE/action/author_attestation","sign_citation":"https://pith.science/pith/RQTQUDHPXAIS44DOBK6IYVD6VE/action/citation_signature","submit_replication":"https://pith.science/pith/RQTQUDHPXAIS44DOBK6IYVD6VE/action/replication_record"}},"created_at":"2026-07-05T01:18:10.782461+00:00","updated_at":"2026-07-05T01:18:10.782461+00:00"}