{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2016:RT5DBQY7MEUAO6HEISIGPPEAZ3","short_pith_number":"pith:RT5DBQY7","schema_version":"1.0","canonical_sha256":"8cfa30c31f61280778e4449067bc80cef9a3f258b4d97df239111230898d8a2e","source":{"kind":"arxiv","id":"1611.10224","version":1},"attestation_state":"computed","paper":{"title":"Modeling of Radiation Damage Effects in Silicon Detectors at High Fluences HL-LHC with Sentaurus TCAD","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["hep-ex"],"primary_cat":"physics.ins-det","authors_text":"Arianna Morozzi, Daniele Passeri, Francesco Moscatelli, GianMario Bilei","submitted_at":"2016-11-30T15:41:26Z","abstract_excerpt":"In this work we propose the application of an enhanced radiation damage model based on the introduction of deep level traps / recombination centers suitable for device level numerical simulation of silicon detectors at very high fluences (e.g. 2.0x10E16 1 MeV equivalent neutrons/cm2). We present the comparison between simulation results and experimental data for p-type substrate structures in different operating conditions (temperature and biasing voltages) for fluences up to 2.2x10E16 neutrons/cm2. The good agreement between simulation findings and experimental measurements fosters the applic"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1611.10224","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.ins-det","submitted_at":"2016-11-30T15:41:26Z","cross_cats_sorted":["hep-ex"],"title_canon_sha256":"9ecf9e95b1ef8ac286411ab8262a5eaeca2584850af5cba8d597d3c7965d38c8","abstract_canon_sha256":"d11c29d5f6582f492f8e6273cd218917b887901557219a41c521c165c2072008"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T00:55:40.230883Z","signature_b64":"oAlc5tXIj80yvO/jxkARI7GJWfHaMfgWKnQM3JfNrVjzFFjM2h6dvIR6oDQoAByJ5+Ha34f6El0AX/LV/J+mDA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"8cfa30c31f61280778e4449067bc80cef9a3f258b4d97df239111230898d8a2e","last_reissued_at":"2026-05-18T00:55:40.230364Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T00:55:40.230364Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Modeling of Radiation Damage Effects in Silicon Detectors at High Fluences HL-LHC with Sentaurus TCAD","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["hep-ex"],"primary_cat":"physics.ins-det","authors_text":"Arianna Morozzi, Daniele Passeri, Francesco Moscatelli, GianMario Bilei","submitted_at":"2016-11-30T15:41:26Z","abstract_excerpt":"In this work we propose the application of an enhanced radiation damage model based on the introduction of deep level traps / recombination centers suitable for device level numerical simulation of silicon detectors at very high fluences (e.g. 2.0x10E16 1 MeV equivalent neutrons/cm2). We present the comparison between simulation results and experimental data for p-type substrate structures in different operating conditions (temperature and biasing voltages) for fluences up to 2.2x10E16 neutrons/cm2. The good agreement between simulation findings and experimental measurements fosters the applic"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1611.10224","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1611.10224","created_at":"2026-05-18T00:55:40.230432+00:00"},{"alias_kind":"arxiv_version","alias_value":"1611.10224v1","created_at":"2026-05-18T00:55:40.230432+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1611.10224","created_at":"2026-05-18T00:55:40.230432+00:00"},{"alias_kind":"pith_short_12","alias_value":"RT5DBQY7MEUA","created_at":"2026-05-18T12:30:41.710351+00:00"},{"alias_kind":"pith_short_16","alias_value":"RT5DBQY7MEUAO6HE","created_at":"2026-05-18T12:30:41.710351+00:00"},{"alias_kind":"pith_short_8","alias_value":"RT5DBQY7","created_at":"2026-05-18T12:30:41.710351+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/RT5DBQY7MEUAO6HEISIGPPEAZ3","json":"https://pith.science/pith/RT5DBQY7MEUAO6HEISIGPPEAZ3.json","graph_json":"https://pith.science/api/pith-number/RT5DBQY7MEUAO6HEISIGPPEAZ3/graph.json","events_json":"https://pith.science/api/pith-number/RT5DBQY7MEUAO6HEISIGPPEAZ3/events.json","paper":"https://pith.science/paper/RT5DBQY7"},"agent_actions":{"view_html":"https://pith.science/pith/RT5DBQY7MEUAO6HEISIGPPEAZ3","download_json":"https://pith.science/pith/RT5DBQY7MEUAO6HEISIGPPEAZ3.json","view_paper":"https://pith.science/paper/RT5DBQY7","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1611.10224&json=true","fetch_graph":"https://pith.science/api/pith-number/RT5DBQY7MEUAO6HEISIGPPEAZ3/graph.json","fetch_events":"https://pith.science/api/pith-number/RT5DBQY7MEUAO6HEISIGPPEAZ3/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/RT5DBQY7MEUAO6HEISIGPPEAZ3/action/timestamp_anchor","attest_storage":"https://pith.science/pith/RT5DBQY7MEUAO6HEISIGPPEAZ3/action/storage_attestation","attest_author":"https://pith.science/pith/RT5DBQY7MEUAO6HEISIGPPEAZ3/action/author_attestation","sign_citation":"https://pith.science/pith/RT5DBQY7MEUAO6HEISIGPPEAZ3/action/citation_signature","submit_replication":"https://pith.science/pith/RT5DBQY7MEUAO6HEISIGPPEAZ3/action/replication_record"}},"created_at":"2026-05-18T00:55:40.230432+00:00","updated_at":"2026-05-18T00:55:40.230432+00:00"}