{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2026:SUXWXKFPYXOCTD3CDBPQECPIIY","short_pith_number":"pith:SUXWXKFP","schema_version":"1.0","canonical_sha256":"952f6ba8afc5dc298f62185f0209e8462d22f03f2ec05c8878c6201342d5fe06","source":{"kind":"arxiv","id":"2606.02317","version":1},"attestation_state":"computed","paper":{"title":"Surface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective Mask Materials","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Ashlee M. Garc\\'ia, Byron D. Aguilar, Daniel Wasserman, Federico Capasso, Pernille Undrum Fathi, Seth R. Bank, William J. Doyle","submitted_at":"2026-06-01T14:33:40Z","abstract_excerpt":"Selective-area embedded regrowth of III-V semiconductors by molecular beam epitaxy enables the seamless integration of metals and dielectrics into crystalline material for novel design of optoelectronic devices. However, traditional masks like $SiO_2$ and $Si_{3}N_{4}$ limit the design of high-contrast photonics in the infrared due to their high extinction coefficients at technologically relevant wavelengths. Consequently, there is a need to explore alternative mask materials to expand the selective area molecular beam epitaxy capabilities beyond those traditionally used. This study evaluates "},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2606.02317","kind":"arxiv","version":1},"metadata":{"license":"http://creativecommons.org/licenses/by/4.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2026-06-01T14:33:40Z","cross_cats_sorted":[],"title_canon_sha256":"324436169d8f3b0ca75ec400c0b79a3ef66a80a51a496dc76b2adfa79dad0be8","abstract_canon_sha256":"499dbd568bdff8148f70ac0a2282fd231e910c6512da540e95b69ac3c1b8eb09"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-06-02T03:04:55.926972Z","signature_b64":"JxpJd7sd6hZ+CcCh8dUzsjWbObdYwdX/UYnEe8yp5LR7bUt8h5vBdAUJlSJQduRAIuCjhJHj+wld5OJZlB0OBA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"952f6ba8afc5dc298f62185f0209e8462d22f03f2ec05c8878c6201342d5fe06","last_reissued_at":"2026-06-02T03:04:55.926578Z","signature_status":"signed_v1","first_computed_at":"2026-06-02T03:04:55.926578Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Surface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective Mask Materials","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Ashlee M. Garc\\'ia, Byron D. Aguilar, Daniel Wasserman, Federico Capasso, Pernille Undrum Fathi, Seth R. Bank, William J. Doyle","submitted_at":"2026-06-01T14:33:40Z","abstract_excerpt":"Selective-area embedded regrowth of III-V semiconductors by molecular beam epitaxy enables the seamless integration of metals and dielectrics into crystalline material for novel design of optoelectronic devices. However, traditional masks like $SiO_2$ and $Si_{3}N_{4}$ limit the design of high-contrast photonics in the infrared due to their high extinction coefficients at technologically relevant wavelengths. Consequently, there is a need to explore alternative mask materials to expand the selective area molecular beam epitaxy capabilities beyond those traditionally used. This study evaluates "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2606.02317","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2606.02317/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2606.02317","created_at":"2026-06-02T03:04:55.926635+00:00"},{"alias_kind":"arxiv_version","alias_value":"2606.02317v1","created_at":"2026-06-02T03:04:55.926635+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2606.02317","created_at":"2026-06-02T03:04:55.926635+00:00"},{"alias_kind":"pith_short_12","alias_value":"SUXWXKFPYXOC","created_at":"2026-06-02T03:04:55.926635+00:00"},{"alias_kind":"pith_short_16","alias_value":"SUXWXKFPYXOCTD3C","created_at":"2026-06-02T03:04:55.926635+00:00"},{"alias_kind":"pith_short_8","alias_value":"SUXWXKFP","created_at":"2026-06-02T03:04:55.926635+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/SUXWXKFPYXOCTD3CDBPQECPIIY","json":"https://pith.science/pith/SUXWXKFPYXOCTD3CDBPQECPIIY.json","graph_json":"https://pith.science/api/pith-number/SUXWXKFPYXOCTD3CDBPQECPIIY/graph.json","events_json":"https://pith.science/api/pith-number/SUXWXKFPYXOCTD3CDBPQECPIIY/events.json","paper":"https://pith.science/paper/SUXWXKFP"},"agent_actions":{"view_html":"https://pith.science/pith/SUXWXKFPYXOCTD3CDBPQECPIIY","download_json":"https://pith.science/pith/SUXWXKFPYXOCTD3CDBPQECPIIY.json","view_paper":"https://pith.science/paper/SUXWXKFP","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2606.02317&json=true","fetch_graph":"https://pith.science/api/pith-number/SUXWXKFPYXOCTD3CDBPQECPIIY/graph.json","fetch_events":"https://pith.science/api/pith-number/SUXWXKFPYXOCTD3CDBPQECPIIY/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/SUXWXKFPYXOCTD3CDBPQECPIIY/action/timestamp_anchor","attest_storage":"https://pith.science/pith/SUXWXKFPYXOCTD3CDBPQECPIIY/action/storage_attestation","attest_author":"https://pith.science/pith/SUXWXKFPYXOCTD3CDBPQECPIIY/action/author_attestation","sign_citation":"https://pith.science/pith/SUXWXKFPYXOCTD3CDBPQECPIIY/action/citation_signature","submit_replication":"https://pith.science/pith/SUXWXKFPYXOCTD3CDBPQECPIIY/action/replication_record"}},"created_at":"2026-06-02T03:04:55.926635+00:00","updated_at":"2026-06-02T03:04:55.926635+00:00"}