{"bundle_type":"pith_open_graph_bundle","bundle_version":"1.0","pith_number":"pith:2012:THY7TST4FX2EH5YAFBXQNQHFI7","short_pith_number":"pith:THY7TST4","canonical_record":{"source":{"id":"1206.1887","kind":"arxiv","version":2},"metadata":{"license":"http://creativecommons.org/licenses/by-nc-sa/3.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2012-06-08T23:01:47Z","cross_cats_sorted":["physics.soc-ph"],"title_canon_sha256":"c50eb58132507f8a31e387c845e2322284b24f10ad3b76f03ce94ec7fde3371b","abstract_canon_sha256":"9e3f4d4a84361f58a9b5e111936b291a42f6a89c9841d803d066721817145845"},"schema_version":"1.0"},"canonical_sha256":"99f1f9ca7c2df443f700286f06c0e547d7d296f98529c17352225ca5098b0552","source":{"kind":"arxiv","id":"1206.1887","version":2},"source_aliases":[{"alias_kind":"arxiv","alias_value":"1206.1887","created_at":"2026-05-18T03:40:14Z"},{"alias_kind":"arxiv_version","alias_value":"1206.1887v2","created_at":"2026-05-18T03:40:14Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1206.1887","created_at":"2026-05-18T03:40:14Z"},{"alias_kind":"pith_short_12","alias_value":"THY7TST4FX2E","created_at":"2026-05-18T12:27:23Z"},{"alias_kind":"pith_short_16","alias_value":"THY7TST4FX2EH5YA","created_at":"2026-05-18T12:27:23Z"},{"alias_kind":"pith_short_8","alias_value":"THY7TST4","created_at":"2026-05-18T12:27:23Z"}],"events":[{"event_type":"record_created","subject_pith_number":"pith:2012:THY7TST4FX2EH5YAFBXQNQHFI7","target":"record","payload":{"canonical_record":{"source":{"id":"1206.1887","kind":"arxiv","version":2},"metadata":{"license":"http://creativecommons.org/licenses/by-nc-sa/3.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2012-06-08T23:01:47Z","cross_cats_sorted":["physics.soc-ph"],"title_canon_sha256":"c50eb58132507f8a31e387c845e2322284b24f10ad3b76f03ce94ec7fde3371b","abstract_canon_sha256":"9e3f4d4a84361f58a9b5e111936b291a42f6a89c9841d803d066721817145845"},"schema_version":"1.0"},"canonical_sha256":"99f1f9ca7c2df443f700286f06c0e547d7d296f98529c17352225ca5098b0552","receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T03:40:14.070894Z","signature_b64":"j2S2Y5YiSa7YZH4VNH+cgoWxUHUah0SqWk2GQPSVz4KX/678wR1OaXNitXdAqz3Y+WxIY4ziAKs7ECQJRqDsBA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"99f1f9ca7c2df443f700286f06c0e547d7d296f98529c17352225ca5098b0552","last_reissued_at":"2026-05-18T03:40:14.070313Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T03:40:14.070313Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"source_kind":"arxiv","source_id":"1206.1887","source_version":2,"attestation_state":"computed"},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-05-18T03:40:14Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"xnvC4wQfDezcTAdPMyXpf+k/4SUu2y46IDVdzT/yOmqzS7AnXfeFVKF3uUdTeQV35Ynq9NDtpt1qeRQdBdsgBQ==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-06-05T19:44:06.918383Z"},"content_sha256":"e47447d8819aed08aab570bec9bda5ad620105fe0aa6bc4b5cd9c347d6015386","schema_version":"1.0","event_id":"sha256:e47447d8819aed08aab570bec9bda5ad620105fe0aa6bc4b5cd9c347d6015386"},{"event_type":"graph_snapshot","subject_pith_number":"pith:2012:THY7TST4FX2EH5YAFBXQNQHFI7","target":"graph","payload":{"graph_snapshot":{"paper":{"title":"Gate Stack Dielectric Degradation of Rare-Earth Oxides Grown on High Mobility Ge Substrates","license":"http://creativecommons.org/licenses/by-nc-sa/3.0/","headline":"","cross_cats":["physics.soc-ph"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"A. Dimoulas, Evangelos K. Evangelou, Md. Shahinur Rahman, Nikos Konofaos","submitted_at":"2012-06-08T23:01:47Z","abstract_excerpt":"We report on the dielectric degradation of Rare-Earth Oxides (REOs), when used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2) on high mobility Ge substrates. Metal-Oxide-Semiconductor (MOS) devices with these stacks,show dissimilar charge trapping phenomena under varying levels of Constant- Voltage-Stress (CVS) conditions, which also influences the measured densities of the interface (Nit) and border (NBT) traps. In the present study we also report on C-Vg hysteresis curves related to Nit and NBT. We also propose a new model based on Maxwell-Wagner instabilities mecha"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1206.1887","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"verdict_id":null},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-05-18T03:40:14Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"8XTj8Fuebjwv3QKj5QSnPnQ8Q5opmJJwxpmsaiGlUfCtt5vwB1dKSRdkKmET0z4sRWjbQOsu3Wq5HMUf7pveBw==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-06-05T19:44:06.919253Z"},"content_sha256":"9cde2c768465fd42ef9fec1d924216bb86e6eded458cc6c06d95503cac23d6a5","schema_version":"1.0","event_id":"sha256:9cde2c768465fd42ef9fec1d924216bb86e6eded458cc6c06d95503cac23d6a5"}],"timestamp_proofs":[],"mirror_hints":[{"mirror_type":"https","name":"Pith Resolver","base_url":"https://pith.science","bundle_url":"https://pith.science/pith/THY7TST4FX2EH5YAFBXQNQHFI7/bundle.json","state_url":"https://pith.science/pith/THY7TST4FX2EH5YAFBXQNQHFI7/state.json","well_known_bundle_url":"https://pith.science/.well-known/pith/THY7TST4FX2EH5YAFBXQNQHFI7/bundle.json","status":"primary"}],"public_keys":[{"key_id":"pith-v1-2026-05","algorithm":"ed25519","format":"raw","public_key_b64":"stVStoiQhXFxp4s2pdzPNoqVNBMojDU/fJ2db5S3CbM=","public_key_hex":"b2d552b68890857171a78b36a5dccf368a953413288c353f7c9d9d6f94b709b3","fingerprint_sha256_b32_first128bits":"RVFV5Z2OI2J3ZUO7ERDEBCYNKS","fingerprint_sha256_hex":"8d4b5ee74e4693bcd1df2446408b0d54","rotates_at":null,"url":"https://pith.science/pith-signing-key.json","notes":"Pith uses this Ed25519 key to sign canonical record SHA-256 digests. Verify with: ed25519_verify(public_key, message=canonical_sha256_bytes, signature=base64decode(signature_b64))."}],"merge_version":"pith-open-graph-merge-v1","built_at":"2026-06-05T19:44:06Z","links":{"resolver":"https://pith.science/pith/THY7TST4FX2EH5YAFBXQNQHFI7","bundle":"https://pith.science/pith/THY7TST4FX2EH5YAFBXQNQHFI7/bundle.json","state":"https://pith.science/pith/THY7TST4FX2EH5YAFBXQNQHFI7/state.json","well_known_bundle":"https://pith.science/.well-known/pith/THY7TST4FX2EH5YAFBXQNQHFI7/bundle.json"},"state":{"state_type":"pith_open_graph_state","state_version":"1.0","pith_number":"pith:2012:THY7TST4FX2EH5YAFBXQNQHFI7","merge_version":"pith-open-graph-merge-v1","event_count":2,"valid_event_count":2,"invalid_event_count":0,"equivocation_count":0,"current":{"canonical_record":{"metadata":{"abstract_canon_sha256":"9e3f4d4a84361f58a9b5e111936b291a42f6a89c9841d803d066721817145845","cross_cats_sorted":["physics.soc-ph"],"license":"http://creativecommons.org/licenses/by-nc-sa/3.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2012-06-08T23:01:47Z","title_canon_sha256":"c50eb58132507f8a31e387c845e2322284b24f10ad3b76f03ce94ec7fde3371b"},"schema_version":"1.0","source":{"id":"1206.1887","kind":"arxiv","version":2}},"source_aliases":[{"alias_kind":"arxiv","alias_value":"1206.1887","created_at":"2026-05-18T03:40:14Z"},{"alias_kind":"arxiv_version","alias_value":"1206.1887v2","created_at":"2026-05-18T03:40:14Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1206.1887","created_at":"2026-05-18T03:40:14Z"},{"alias_kind":"pith_short_12","alias_value":"THY7TST4FX2E","created_at":"2026-05-18T12:27:23Z"},{"alias_kind":"pith_short_16","alias_value":"THY7TST4FX2EH5YA","created_at":"2026-05-18T12:27:23Z"},{"alias_kind":"pith_short_8","alias_value":"THY7TST4","created_at":"2026-05-18T12:27:23Z"}],"graph_snapshots":[{"event_id":"sha256:9cde2c768465fd42ef9fec1d924216bb86e6eded458cc6c06d95503cac23d6a5","target":"graph","created_at":"2026-05-18T03:40:14Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"graph_snapshot":{"author_claims":{"count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","strong_count":0},"builder_version":"pith-number-builder-2026-05-17-v1","claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"paper":{"abstract_excerpt":"We report on the dielectric degradation of Rare-Earth Oxides (REOs), when used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2) on high mobility Ge substrates. Metal-Oxide-Semiconductor (MOS) devices with these stacks,show dissimilar charge trapping phenomena under varying levels of Constant- Voltage-Stress (CVS) conditions, which also influences the measured densities of the interface (Nit) and border (NBT) traps. In the present study we also report on C-Vg hysteresis curves related to Nit and NBT. We also propose a new model based on Maxwell-Wagner instabilities mecha","authors_text":"A. Dimoulas, Evangelos K. Evangelou, Md. Shahinur Rahman, Nikos Konofaos","cross_cats":["physics.soc-ph"],"headline":"","license":"http://creativecommons.org/licenses/by-nc-sa/3.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2012-06-08T23:01:47Z","title":"Gate Stack Dielectric Degradation of Rare-Earth Oxides Grown on High Mobility Ge Substrates"},"references":{"count":0,"internal_anchors":0,"resolved_work":0,"sample":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1206.1887","kind":"arxiv","version":2},"verdict":{"created_at":null,"id":null,"model_set":{},"one_line_summary":"","pipeline_version":null,"pith_extraction_headline":"","strongest_claim":"","weakest_assumption":""}},"verdict_id":null}}],"author_attestations":[],"timestamp_anchors":[],"storage_attestations":[],"citation_signatures":[],"replication_records":[],"corrections":[],"mirror_hints":[],"record_created":{"event_id":"sha256:e47447d8819aed08aab570bec9bda5ad620105fe0aa6bc4b5cd9c347d6015386","target":"record","created_at":"2026-05-18T03:40:14Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"attestation_state":"computed","canonical_record":{"metadata":{"abstract_canon_sha256":"9e3f4d4a84361f58a9b5e111936b291a42f6a89c9841d803d066721817145845","cross_cats_sorted":["physics.soc-ph"],"license":"http://creativecommons.org/licenses/by-nc-sa/3.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2012-06-08T23:01:47Z","title_canon_sha256":"c50eb58132507f8a31e387c845e2322284b24f10ad3b76f03ce94ec7fde3371b"},"schema_version":"1.0","source":{"id":"1206.1887","kind":"arxiv","version":2}},"canonical_sha256":"99f1f9ca7c2df443f700286f06c0e547d7d296f98529c17352225ca5098b0552","receipt":{"algorithm":"ed25519","builder_version":"pith-number-builder-2026-05-17-v1","canonical_sha256":"99f1f9ca7c2df443f700286f06c0e547d7d296f98529c17352225ca5098b0552","first_computed_at":"2026-05-18T03:40:14.070313Z","key_id":"pith-v1-2026-05","kind":"pith_receipt","last_reissued_at":"2026-05-18T03:40:14.070313Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","receipt_version":"0.3","signature_b64":"j2S2Y5YiSa7YZH4VNH+cgoWxUHUah0SqWk2GQPSVz4KX/678wR1OaXNitXdAqz3Y+WxIY4ziAKs7ECQJRqDsBA==","signature_status":"signed_v1","signed_at":"2026-05-18T03:40:14.070894Z","signed_message":"canonical_sha256_bytes"},"source_id":"1206.1887","source_kind":"arxiv","source_version":2}}},"equivocations":[],"invalid_events":[],"applied_event_ids":["sha256:e47447d8819aed08aab570bec9bda5ad620105fe0aa6bc4b5cd9c347d6015386","sha256:9cde2c768465fd42ef9fec1d924216bb86e6eded458cc6c06d95503cac23d6a5"],"state_sha256":"03b898835043ccf3769bb02cbfe2f2659cdfef1054d317cf9d91df1f1ff4b4c5"},"bundle_signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"suwv65j9pIHeXcoenfZHiiuQGW58143HhnaSUX1oii0fP59wfM5SBU76xC2GA4NkNq3v48bALZG0BAZihWdyCQ==","signed_message":"bundle_sha256_bytes","signed_at":"2026-06-05T19:44:06.924171Z","bundle_sha256":"eb60f8486518b336f822a360d8ae9572a240b666721b1a07a6288efdbfa31b87"}}