{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2018:UGW2N6VU2IBZDBTLXRUONJP7LK","short_pith_number":"pith:UGW2N6VU","schema_version":"1.0","canonical_sha256":"a1ada6fab4d20391866bbc68e6a5ff5a930ebabd4493dfe44142d5d0e31a8566","source":{"kind":"arxiv","id":"1804.03639","version":1},"attestation_state":"computed","paper":{"title":"Phosphorus oxide gate dielectric for black phosphorus field effect transistors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["physics.app-ph"],"primary_cat":"cond-mat.mes-hall","authors_text":"A. Korinek, G. A. Botton, I. Fakih, M. Caporali, M. Peruzzini, M. Serrano-Ruiz, S. Heun, T. Szkopek, V. Tayari, W. Dickerson","submitted_at":"2018-04-10T17:32:39Z","abstract_excerpt":"The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of a POx layer grown by reactive ion etching followed by atomic layer deposition of Al2O3. We observe room temperature top-gate mobilities of 115 cm2/Vs in ambient conditions, which we attribute to the "},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1804.03639","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mes-hall","submitted_at":"2018-04-10T17:32:39Z","cross_cats_sorted":["physics.app-ph"],"title_canon_sha256":"8df63b9250729cde094c0828298937be5dee1629856afe7ceb5851fa2e564872","abstract_canon_sha256":"9718eea2fc98cec572b1eda453e9ca2a96e702cf770058a9d738461102226ab8"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T00:17:23.611694Z","signature_b64":"gMDyrwdgFopYzZUPPd66+a6OMY+C9ACYMFwnQCdVxDV/9HHvd4Jl6YsSgKXBZocdO+alU76CBITjw3te/IAQBQ==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"a1ada6fab4d20391866bbc68e6a5ff5a930ebabd4493dfe44142d5d0e31a8566","last_reissued_at":"2026-05-18T00:17:23.611057Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T00:17:23.611057Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Phosphorus oxide gate dielectric for black phosphorus field effect transistors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["physics.app-ph"],"primary_cat":"cond-mat.mes-hall","authors_text":"A. Korinek, G. A. Botton, I. Fakih, M. Caporali, M. Peruzzini, M. Serrano-Ruiz, S. Heun, T. Szkopek, V. Tayari, W. Dickerson","submitted_at":"2018-04-10T17:32:39Z","abstract_excerpt":"The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of a POx layer grown by reactive ion etching followed by atomic layer deposition of Al2O3. We observe room temperature top-gate mobilities of 115 cm2/Vs in ambient conditions, which we attribute to the "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1804.03639","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1804.03639","created_at":"2026-05-18T00:17:23.611147+00:00"},{"alias_kind":"arxiv_version","alias_value":"1804.03639v1","created_at":"2026-05-18T00:17:23.611147+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1804.03639","created_at":"2026-05-18T00:17:23.611147+00:00"},{"alias_kind":"pith_short_12","alias_value":"UGW2N6VU2IBZ","created_at":"2026-05-18T12:32:56.356000+00:00"},{"alias_kind":"pith_short_16","alias_value":"UGW2N6VU2IBZDBTL","created_at":"2026-05-18T12:32:56.356000+00:00"},{"alias_kind":"pith_short_8","alias_value":"UGW2N6VU","created_at":"2026-05-18T12:32:56.356000+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/UGW2N6VU2IBZDBTLXRUONJP7LK","json":"https://pith.science/pith/UGW2N6VU2IBZDBTLXRUONJP7LK.json","graph_json":"https://pith.science/api/pith-number/UGW2N6VU2IBZDBTLXRUONJP7LK/graph.json","events_json":"https://pith.science/api/pith-number/UGW2N6VU2IBZDBTLXRUONJP7LK/events.json","paper":"https://pith.science/paper/UGW2N6VU"},"agent_actions":{"view_html":"https://pith.science/pith/UGW2N6VU2IBZDBTLXRUONJP7LK","download_json":"https://pith.science/pith/UGW2N6VU2IBZDBTLXRUONJP7LK.json","view_paper":"https://pith.science/paper/UGW2N6VU","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1804.03639&json=true","fetch_graph":"https://pith.science/api/pith-number/UGW2N6VU2IBZDBTLXRUONJP7LK/graph.json","fetch_events":"https://pith.science/api/pith-number/UGW2N6VU2IBZDBTLXRUONJP7LK/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/UGW2N6VU2IBZDBTLXRUONJP7LK/action/timestamp_anchor","attest_storage":"https://pith.science/pith/UGW2N6VU2IBZDBTLXRUONJP7LK/action/storage_attestation","attest_author":"https://pith.science/pith/UGW2N6VU2IBZDBTLXRUONJP7LK/action/author_attestation","sign_citation":"https://pith.science/pith/UGW2N6VU2IBZDBTLXRUONJP7LK/action/citation_signature","submit_replication":"https://pith.science/pith/UGW2N6VU2IBZDBTLXRUONJP7LK/action/replication_record"}},"created_at":"2026-05-18T00:17:23.611147+00:00","updated_at":"2026-05-18T00:17:23.611147+00:00"}