{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2021:VADROLZTDHMD7CRAORPZVFTKFN","short_pith_number":"pith:VADROLZT","schema_version":"1.0","canonical_sha256":"a807172f3319d83f8a20745f9a966a2b48e32aac435122f0f90483dd464792fd","source":{"kind":"arxiv","id":"2107.08301","version":1},"attestation_state":"computed","paper":{"title":"Lateral Transport and Field-Effect Characteristics of Sputtered P-Type Chalcogenide Thin Films","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["physics.app-ph"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Alwin Daus, Asir Intisar Khan, Eric Pop, Kathryn M. Neilson, Mahnaz Islam, Sumaiya Wahid, Victoria Chen","submitted_at":"2021-07-17T18:34:11Z","abstract_excerpt":"Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory applications. For instance, p-type FETs with sputtered materials at low temperature (<= 250 C) could play a role in flexible electronics or back-end-of-line (BEOL) silicon-compatible processes. Here, we explore lateral transport in chalcogenide films (Sb2Te3, Ge2Sb2Te5, Ge4Sb6Te7) and multilayers, with Hall measurements (in <= 50 nm thin films) and with p-type transistors (in <= 5 nm ultrathin films). The highest Hall "},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2107.08301","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2021-07-17T18:34:11Z","cross_cats_sorted":["physics.app-ph"],"title_canon_sha256":"7b1d0c4e0998ea9eeaf36a2c00a2681457cf7b834838cedf981c7746d4ed0ed2","abstract_canon_sha256":"7b9f1ccc6c0ab9f254512bb53a8d0087cf3c8386dddb1665610d856ee1486cdf"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T03:42:44.386208Z","signature_b64":"HrzU5ox92aHAGSPoUwxX7TKE6B8NVnzormR/AVA21onmThA5o1XxQwW8KKObHnRtAMO8ba3GY05hua9UHJ1BDA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"a807172f3319d83f8a20745f9a966a2b48e32aac435122f0f90483dd464792fd","last_reissued_at":"2026-07-05T03:42:44.385762Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T03:42:44.385762Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Lateral Transport and Field-Effect Characteristics of Sputtered P-Type Chalcogenide Thin Films","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["physics.app-ph"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Alwin Daus, Asir Intisar Khan, Eric Pop, Kathryn M. Neilson, Mahnaz Islam, Sumaiya Wahid, Victoria Chen","submitted_at":"2021-07-17T18:34:11Z","abstract_excerpt":"Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory applications. For instance, p-type FETs with sputtered materials at low temperature (<= 250 C) could play a role in flexible electronics or back-end-of-line (BEOL) silicon-compatible processes. Here, we explore lateral transport in chalcogenide films (Sb2Te3, Ge2Sb2Te5, Ge4Sb6Te7) and multilayers, with Hall measurements (in <= 50 nm thin films) and with p-type transistors (in <= 5 nm ultrathin films). The highest Hall "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2107.08301","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2107.08301/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2107.08301","created_at":"2026-07-05T03:42:44.385822+00:00"},{"alias_kind":"arxiv_version","alias_value":"2107.08301v1","created_at":"2026-07-05T03:42:44.385822+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2107.08301","created_at":"2026-07-05T03:42:44.385822+00:00"},{"alias_kind":"pith_short_12","alias_value":"VADROLZTDHMD","created_at":"2026-07-05T03:42:44.385822+00:00"},{"alias_kind":"pith_short_16","alias_value":"VADROLZTDHMD7CRA","created_at":"2026-07-05T03:42:44.385822+00:00"},{"alias_kind":"pith_short_8","alias_value":"VADROLZT","created_at":"2026-07-05T03:42:44.385822+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/VADROLZTDHMD7CRAORPZVFTKFN","json":"https://pith.science/pith/VADROLZTDHMD7CRAORPZVFTKFN.json","graph_json":"https://pith.science/api/pith-number/VADROLZTDHMD7CRAORPZVFTKFN/graph.json","events_json":"https://pith.science/api/pith-number/VADROLZTDHMD7CRAORPZVFTKFN/events.json","paper":"https://pith.science/paper/VADROLZT"},"agent_actions":{"view_html":"https://pith.science/pith/VADROLZTDHMD7CRAORPZVFTKFN","download_json":"https://pith.science/pith/VADROLZTDHMD7CRAORPZVFTKFN.json","view_paper":"https://pith.science/paper/VADROLZT","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2107.08301&json=true","fetch_graph":"https://pith.science/api/pith-number/VADROLZTDHMD7CRAORPZVFTKFN/graph.json","fetch_events":"https://pith.science/api/pith-number/VADROLZTDHMD7CRAORPZVFTKFN/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/VADROLZTDHMD7CRAORPZVFTKFN/action/timestamp_anchor","attest_storage":"https://pith.science/pith/VADROLZTDHMD7CRAORPZVFTKFN/action/storage_attestation","attest_author":"https://pith.science/pith/VADROLZTDHMD7CRAORPZVFTKFN/action/author_attestation","sign_citation":"https://pith.science/pith/VADROLZTDHMD7CRAORPZVFTKFN/action/citation_signature","submit_replication":"https://pith.science/pith/VADROLZTDHMD7CRAORPZVFTKFN/action/replication_record"}},"created_at":"2026-07-05T03:42:44.385822+00:00","updated_at":"2026-07-05T03:42:44.385822+00:00"}