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In this study, site preference and diffusion behaviors of H in pure 3C-\\b{eta} SiC and in He-implanted 3C-\\b{eta} SiC are investigated, on the basis of the first-principles calculations. We find that the most stable sites for H in pure 3C-\\b{eta}SiC is the anti-bond site of C (ABc) in Si-C, while it becomes the bond-center (BC) site of Si-C bonds in the He-implanted 3C-\\b{eta} SiC. Analysis on the electronic structures reveals that such change is attributed to the reduction of hybridization of C-Si bonds induced by He. 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