{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2026:VOTEKNKZ7ERIVNWP4M3DP2BKXE","short_pith_number":"pith:VOTEKNKZ","schema_version":"1.0","canonical_sha256":"aba6453559f9228ab6cfe33637e82ab93b020105cc888511c23f005b00513a81","source":{"kind":"arxiv","id":"2606.10269","version":1},"attestation_state":"computed","paper":{"title":"Fast-Neutron Irradiation Effect in Heteroepitaxial $\\beta$-Ga$_2$O$_3$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Ahmed Ibreljic, Anhar Bhuiyan, Saleh Ahmed Khan, Sourav Sarker, Stephen Margiotta","submitted_at":"2026-06-09T00:33:44Z","abstract_excerpt":"In this work, we investigate the response of Ni/$\\beta$-Ga$_2$O$_3$ Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of $1\\times10^{15}$ n$\\cdot$cm$^{-2}$. The LPCVD-grown heteroepitaxial structure consists of an unintentionally doped buffer, an n$^{+}$ contact layer, and an n-type drift layer, with mesa isolation realized by plasma-free Ga-assisted LPCVD etching. Prior to irradiation, the devices exhibit a turn-on voltage of 1.20 V, specific on-resistance of 8.43 m$\\Omega\\cdot$cm$^2$, ideality factor of 1.32, and Schottky barrier height of 1.2"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2606.10269","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2026-06-09T00:33:44Z","cross_cats_sorted":[],"title_canon_sha256":"c24f36ce449c788faa63cc48fe44b2cfff461e5b0f967547cccf6ddb36a3507c","abstract_canon_sha256":"30800857f1528a82ce6f58e027834f1b2243c2a23ff1e31a828355518afdea21"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-06-10T01:09:03.457190Z","signature_b64":"YWxJmBZSJiQqGtLUMW2xumwv61EKy3vGQK2xjOYWWd4OkK+ffPNsf64Z0lbpIFkfnZdGXcamQarcGSbx7NdRBw==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"aba6453559f9228ab6cfe33637e82ab93b020105cc888511c23f005b00513a81","last_reissued_at":"2026-06-10T01:09:03.456291Z","signature_status":"signed_v1","first_computed_at":"2026-06-10T01:09:03.456291Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Fast-Neutron Irradiation Effect in Heteroepitaxial $\\beta$-Ga$_2$O$_3$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Ahmed Ibreljic, Anhar Bhuiyan, Saleh Ahmed Khan, Sourav Sarker, Stephen Margiotta","submitted_at":"2026-06-09T00:33:44Z","abstract_excerpt":"In this work, we investigate the response of Ni/$\\beta$-Ga$_2$O$_3$ Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of $1\\times10^{15}$ n$\\cdot$cm$^{-2}$. The LPCVD-grown heteroepitaxial structure consists of an unintentionally doped buffer, an n$^{+}$ contact layer, and an n-type drift layer, with mesa isolation realized by plasma-free Ga-assisted LPCVD etching. Prior to irradiation, the devices exhibit a turn-on voltage of 1.20 V, specific on-resistance of 8.43 m$\\Omega\\cdot$cm$^2$, ideality factor of 1.32, and Schottky barrier height of 1.2"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2606.10269","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2606.10269/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2606.10269","created_at":"2026-06-10T01:09:03.456463+00:00"},{"alias_kind":"arxiv_version","alias_value":"2606.10269v1","created_at":"2026-06-10T01:09:03.456463+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2606.10269","created_at":"2026-06-10T01:09:03.456463+00:00"},{"alias_kind":"pith_short_12","alias_value":"VOTEKNKZ7ERI","created_at":"2026-06-10T01:09:03.456463+00:00"},{"alias_kind":"pith_short_16","alias_value":"VOTEKNKZ7ERIVNWP","created_at":"2026-06-10T01:09:03.456463+00:00"},{"alias_kind":"pith_short_8","alias_value":"VOTEKNKZ","created_at":"2026-06-10T01:09:03.456463+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/VOTEKNKZ7ERIVNWP4M3DP2BKXE","json":"https://pith.science/pith/VOTEKNKZ7ERIVNWP4M3DP2BKXE.json","graph_json":"https://pith.science/api/pith-number/VOTEKNKZ7ERIVNWP4M3DP2BKXE/graph.json","events_json":"https://pith.science/api/pith-number/VOTEKNKZ7ERIVNWP4M3DP2BKXE/events.json","paper":"https://pith.science/paper/VOTEKNKZ"},"agent_actions":{"view_html":"https://pith.science/pith/VOTEKNKZ7ERIVNWP4M3DP2BKXE","download_json":"https://pith.science/pith/VOTEKNKZ7ERIVNWP4M3DP2BKXE.json","view_paper":"https://pith.science/paper/VOTEKNKZ","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2606.10269&json=true","fetch_graph":"https://pith.science/api/pith-number/VOTEKNKZ7ERIVNWP4M3DP2BKXE/graph.json","fetch_events":"https://pith.science/api/pith-number/VOTEKNKZ7ERIVNWP4M3DP2BKXE/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/VOTEKNKZ7ERIVNWP4M3DP2BKXE/action/timestamp_anchor","attest_storage":"https://pith.science/pith/VOTEKNKZ7ERIVNWP4M3DP2BKXE/action/storage_attestation","attest_author":"https://pith.science/pith/VOTEKNKZ7ERIVNWP4M3DP2BKXE/action/author_attestation","sign_citation":"https://pith.science/pith/VOTEKNKZ7ERIVNWP4M3DP2BKXE/action/citation_signature","submit_replication":"https://pith.science/pith/VOTEKNKZ7ERIVNWP4M3DP2BKXE/action/replication_record"}},"created_at":"2026-06-10T01:09:03.456463+00:00","updated_at":"2026-06-10T01:09:03.456463+00:00"}