{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2019:WJUJPLBEITXO326JWAHCXS65V3","short_pith_number":"pith:WJUJPLBE","schema_version":"1.0","canonical_sha256":"b26897ac2444eeedebc9b00e2bcbddaee95df1e2ec344e68ce88c6e56cd7eb8b","source":{"kind":"arxiv","id":"1911.09327","version":1},"attestation_state":"computed","paper":{"title":"Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"Chih-Yi Cheng, Chun-Wei Chen, Fang-Cheng Chou, Han-Ting Liao, Hsiang-Chih Chiu, Jan Sebastian Dominic Rodriguez, Kenji Watanabe, Raman Sankar, Shao-Yu Chen, Takashi Taniguchi, Wei-Hua Wang, Yi-Hsun Chen","submitted_at":"2019-11-21T08:06:08Z","abstract_excerpt":"In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Fermi-level (FL) pinning effect, which commonly caused by interfacial gap states, severely limits the tunability of junction characteristics, including barrier height and contact resistance. A tunneling contact scheme has been suggested to address the FL pinning issue in metal-2D-semiconductor junctions, whereas the experimental realization is still elusive. Here, we show that an oxidized-monolayer-enabled tunneling barr"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1911.09327","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mes-hall","submitted_at":"2019-11-21T08:06:08Z","cross_cats_sorted":["cond-mat.mtrl-sci"],"title_canon_sha256":"eb3ac013c3ca9e2d8859b6bad91ad1300f4b461d8949716754aeb5a2f6c5b204","abstract_canon_sha256":"0a930fd8fdb6d842857bbe794e7a019e6f248fc686e0e11723b1a8abc28e89fe"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T00:20:59.289902Z","signature_b64":"ewiin38lJvi4otPEcz5av2HLiqI7aXy5uj3kt1TyUQS7DE1iK8owhUX7HLDCYvmALyx0+qfdRPj2uN+AGCP6CQ==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"b26897ac2444eeedebc9b00e2bcbddaee95df1e2ec344e68ce88c6e56cd7eb8b","last_reissued_at":"2026-07-05T00:20:59.289435Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T00:20:59.289435Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"Chih-Yi Cheng, Chun-Wei Chen, Fang-Cheng Chou, Han-Ting Liao, Hsiang-Chih Chiu, Jan Sebastian Dominic Rodriguez, Kenji Watanabe, Raman Sankar, Shao-Yu Chen, Takashi Taniguchi, Wei-Hua Wang, Yi-Hsun Chen","submitted_at":"2019-11-21T08:06:08Z","abstract_excerpt":"In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Fermi-level (FL) pinning effect, which commonly caused by interfacial gap states, severely limits the tunability of junction characteristics, including barrier height and contact resistance. A tunneling contact scheme has been suggested to address the FL pinning issue in metal-2D-semiconductor junctions, whereas the experimental realization is still elusive. Here, we show that an oxidized-monolayer-enabled tunneling barr"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1911.09327","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/1911.09327/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1911.09327","created_at":"2026-07-05T00:20:59.289495+00:00"},{"alias_kind":"arxiv_version","alias_value":"1911.09327v1","created_at":"2026-07-05T00:20:59.289495+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1911.09327","created_at":"2026-07-05T00:20:59.289495+00:00"},{"alias_kind":"pith_short_12","alias_value":"WJUJPLBEITXO","created_at":"2026-07-05T00:20:59.289495+00:00"},{"alias_kind":"pith_short_16","alias_value":"WJUJPLBEITXO326J","created_at":"2026-07-05T00:20:59.289495+00:00"},{"alias_kind":"pith_short_8","alias_value":"WJUJPLBE","created_at":"2026-07-05T00:20:59.289495+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/WJUJPLBEITXO326JWAHCXS65V3","json":"https://pith.science/pith/WJUJPLBEITXO326JWAHCXS65V3.json","graph_json":"https://pith.science/api/pith-number/WJUJPLBEITXO326JWAHCXS65V3/graph.json","events_json":"https://pith.science/api/pith-number/WJUJPLBEITXO326JWAHCXS65V3/events.json","paper":"https://pith.science/paper/WJUJPLBE"},"agent_actions":{"view_html":"https://pith.science/pith/WJUJPLBEITXO326JWAHCXS65V3","download_json":"https://pith.science/pith/WJUJPLBEITXO326JWAHCXS65V3.json","view_paper":"https://pith.science/paper/WJUJPLBE","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1911.09327&json=true","fetch_graph":"https://pith.science/api/pith-number/WJUJPLBEITXO326JWAHCXS65V3/graph.json","fetch_events":"https://pith.science/api/pith-number/WJUJPLBEITXO326JWAHCXS65V3/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/WJUJPLBEITXO326JWAHCXS65V3/action/timestamp_anchor","attest_storage":"https://pith.science/pith/WJUJPLBEITXO326JWAHCXS65V3/action/storage_attestation","attest_author":"https://pith.science/pith/WJUJPLBEITXO326JWAHCXS65V3/action/author_attestation","sign_citation":"https://pith.science/pith/WJUJPLBEITXO326JWAHCXS65V3/action/citation_signature","submit_replication":"https://pith.science/pith/WJUJPLBEITXO326JWAHCXS65V3/action/replication_record"}},"created_at":"2026-07-05T00:20:59.289495+00:00","updated_at":"2026-07-05T00:20:59.289495+00:00"}