{"bundle_type":"pith_open_graph_bundle","bundle_version":"1.0","pith_number":"pith:2024:WZS3ON7QTUY3Z6YAWTRPEOFAS6","short_pith_number":"pith:WZS3ON7Q","canonical_record":{"source":{"id":"2410.19545","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2024-10-25T13:17:10Z","cross_cats_sorted":[],"title_canon_sha256":"6acf42ae282f01bd11a7d9bc84dbb2a75811b5ce0fdf3a39895d198c987a7bbf","abstract_canon_sha256":"74ad2d3623c6e3fe9766527d505013dc0112b386fa8aff523739a3dc73881aea"},"schema_version":"1.0"},"canonical_sha256":"b665b737f09d31bcfb00b4e2f238a09798fd4d4c75b6c537d3bd9e25817a42df","source":{"kind":"arxiv","id":"2410.19545","version":1},"source_aliases":[{"alias_kind":"arxiv","alias_value":"2410.19545","created_at":"2026-07-05T09:25:58Z"},{"alias_kind":"arxiv_version","alias_value":"2410.19545v1","created_at":"2026-07-05T09:25:58Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2410.19545","created_at":"2026-07-05T09:25:58Z"},{"alias_kind":"pith_short_12","alias_value":"WZS3ON7QTUY3","created_at":"2026-07-05T09:25:58Z"},{"alias_kind":"pith_short_16","alias_value":"WZS3ON7QTUY3Z6YA","created_at":"2026-07-05T09:25:58Z"},{"alias_kind":"pith_short_8","alias_value":"WZS3ON7Q","created_at":"2026-07-05T09:25:58Z"}],"events":[{"event_type":"record_created","subject_pith_number":"pith:2024:WZS3ON7QTUY3Z6YAWTRPEOFAS6","target":"record","payload":{"canonical_record":{"source":{"id":"2410.19545","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2024-10-25T13:17:10Z","cross_cats_sorted":[],"title_canon_sha256":"6acf42ae282f01bd11a7d9bc84dbb2a75811b5ce0fdf3a39895d198c987a7bbf","abstract_canon_sha256":"74ad2d3623c6e3fe9766527d505013dc0112b386fa8aff523739a3dc73881aea"},"schema_version":"1.0"},"canonical_sha256":"b665b737f09d31bcfb00b4e2f238a09798fd4d4c75b6c537d3bd9e25817a42df","receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T09:25:58.163221Z","signature_b64":"hyxybfO847D/LEHV4ss/xUqrAiCz3AvV6V1rzu2nRI7jTZeCYZTGMZeFtkfP2taSJiRKMkrdYDsuI7myUOiyBA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"b665b737f09d31bcfb00b4e2f238a09798fd4d4c75b6c537d3bd9e25817a42df","last_reissued_at":"2026-07-05T09:25:58.162749Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T09:25:58.162749Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"source_kind":"arxiv","source_id":"2410.19545","source_version":1,"attestation_state":"computed"},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-07-05T09:25:58Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"tzkWjJYGnWU8klMxXfv5oAuUs0TOT+0Unx4Ry1lOshohllljBAt9W0UsWRveHifzxgJMqMpjogmlm7nrp8ENAQ==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-08-06T15:51:20.014127Z"},"content_sha256":"55fef38308034b26af37382ff0b5ad0c6fd15ae9c0d7a3e0cdca955e9f309be2","schema_version":"1.0","event_id":"sha256:55fef38308034b26af37382ff0b5ad0c6fd15ae9c0d7a3e0cdca955e9f309be2"},{"event_type":"graph_snapshot","subject_pith_number":"pith:2024:WZS3ON7QTUY3Z6YAWTRPEOFAS6","target":"graph","payload":{"graph_snapshot":{"paper":{"title":"Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200{\\deg}C","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"A. Russo, C. Bongiorno, E. Zanetti, F. Cordiano, F. Giannazzo, F. Roccaforte, M. Saggio, P. Fiorenza, S. M. Alessandrino","submitted_at":"2024-10-25T13:17:10Z","abstract_excerpt":"The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB)."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2410.19545","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2410.19545/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"verdict_id":null},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-07-05T09:25:58Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"qF1OvQCSQtsl17C6JK1QUsGSiBc/P2DYSRFHkZD2Gw1zUhkBRhBBpDIVlADvEhcYILVx+ynXAtdnXNENZbwTBw==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-08-06T15:51:20.014710Z"},"content_sha256":"61ead6a4aefbdec9a2f8e6c1f8d53b9284cce8e7d972dd4339449113b3b62712","schema_version":"1.0","event_id":"sha256:61ead6a4aefbdec9a2f8e6c1f8d53b9284cce8e7d972dd4339449113b3b62712"}],"timestamp_proofs":[],"mirror_hints":[{"mirror_type":"https","name":"Pith Resolver","base_url":"https://pith.science","bundle_url":"https://pith.science/pith/WZS3ON7QTUY3Z6YAWTRPEOFAS6/bundle.json","state_url":"https://pith.science/pith/WZS3ON7QTUY3Z6YAWTRPEOFAS6/state.json","well_known_bundle_url":"https://pith.science/.well-known/pith/WZS3ON7QTUY3Z6YAWTRPEOFAS6/bundle.json","status":"primary"}],"public_keys":[{"key_id":"pith-v1-2026-05","algorithm":"ed25519","format":"raw","public_key_b64":"stVStoiQhXFxp4s2pdzPNoqVNBMojDU/fJ2db5S3CbM=","public_key_hex":"b2d552b68890857171a78b36a5dccf368a953413288c353f7c9d9d6f94b709b3","fingerprint_sha256_b32_first128bits":"RVFV5Z2OI2J3ZUO7ERDEBCYNKS","fingerprint_sha256_hex":"8d4b5ee74e4693bcd1df2446408b0d54","rotates_at":null,"url":"https://pith.science/pith-signing-key.json","notes":"Pith uses this Ed25519 key to sign canonical record SHA-256 digests. Verify with: ed25519_verify(public_key, message=canonical_sha256_bytes, signature=base64decode(signature_b64))."}],"merge_version":"pith-open-graph-merge-v1","built_at":"2026-08-06T15:51:20Z","links":{"resolver":"https://pith.science/pith/WZS3ON7QTUY3Z6YAWTRPEOFAS6","bundle":"https://pith.science/pith/WZS3ON7QTUY3Z6YAWTRPEOFAS6/bundle.json","state":"https://pith.science/pith/WZS3ON7QTUY3Z6YAWTRPEOFAS6/state.json","well_known_bundle":"https://pith.science/.well-known/pith/WZS3ON7QTUY3Z6YAWTRPEOFAS6/bundle.json"},"state":{"state_type":"pith_open_graph_state","state_version":"1.0","pith_number":"pith:2024:WZS3ON7QTUY3Z6YAWTRPEOFAS6","merge_version":"pith-open-graph-merge-v1","event_count":2,"valid_event_count":2,"invalid_event_count":0,"equivocation_count":0,"current":{"canonical_record":{"metadata":{"abstract_canon_sha256":"74ad2d3623c6e3fe9766527d505013dc0112b386fa8aff523739a3dc73881aea","cross_cats_sorted":[],"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2024-10-25T13:17:10Z","title_canon_sha256":"6acf42ae282f01bd11a7d9bc84dbb2a75811b5ce0fdf3a39895d198c987a7bbf"},"schema_version":"1.0","source":{"id":"2410.19545","kind":"arxiv","version":1}},"source_aliases":[{"alias_kind":"arxiv","alias_value":"2410.19545","created_at":"2026-07-05T09:25:58Z"},{"alias_kind":"arxiv_version","alias_value":"2410.19545v1","created_at":"2026-07-05T09:25:58Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2410.19545","created_at":"2026-07-05T09:25:58Z"},{"alias_kind":"pith_short_12","alias_value":"WZS3ON7QTUY3","created_at":"2026-07-05T09:25:58Z"},{"alias_kind":"pith_short_16","alias_value":"WZS3ON7QTUY3Z6YA","created_at":"2026-07-05T09:25:58Z"},{"alias_kind":"pith_short_8","alias_value":"WZS3ON7Q","created_at":"2026-07-05T09:25:58Z"}],"graph_snapshots":[{"event_id":"sha256:61ead6a4aefbdec9a2f8e6c1f8d53b9284cce8e7d972dd4339449113b3b62712","target":"graph","created_at":"2026-07-05T09:25:58Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"graph_snapshot":{"author_claims":{"count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","strong_count":0},"builder_version":"pith-number-builder-2026-05-17-v1","claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"integrity":{"available":true,"clean":true,"detectors_run":[],"endpoint":"/pith/2410.19545/integrity.json","findings":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938","summary":{"advisory":0,"by_detector":{},"critical":0,"informational":0}},"paper":{"abstract_excerpt":"The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).","authors_text":"A. Russo, C. Bongiorno, E. Zanetti, F. Cordiano, F. Giannazzo, F. Roccaforte, M. Saggio, P. Fiorenza, S. M. Alessandrino","cross_cats":[],"headline":"","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2024-10-25T13:17:10Z","title":"Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200{\\deg}C"},"references":{"count":0,"internal_anchors":0,"resolved_work":0,"sample":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2410.19545","kind":"arxiv","version":1},"verdict":{"created_at":null,"id":null,"model_set":{},"one_line_summary":"","pipeline_version":null,"pith_extraction_headline":"","strongest_claim":"","weakest_assumption":""}},"verdict_id":null}}],"author_attestations":[],"timestamp_anchors":[],"storage_attestations":[],"citation_signatures":[],"replication_records":[],"corrections":[],"mirror_hints":[],"record_created":{"event_id":"sha256:55fef38308034b26af37382ff0b5ad0c6fd15ae9c0d7a3e0cdca955e9f309be2","target":"record","created_at":"2026-07-05T09:25:58Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"attestation_state":"computed","canonical_record":{"metadata":{"abstract_canon_sha256":"74ad2d3623c6e3fe9766527d505013dc0112b386fa8aff523739a3dc73881aea","cross_cats_sorted":[],"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2024-10-25T13:17:10Z","title_canon_sha256":"6acf42ae282f01bd11a7d9bc84dbb2a75811b5ce0fdf3a39895d198c987a7bbf"},"schema_version":"1.0","source":{"id":"2410.19545","kind":"arxiv","version":1}},"canonical_sha256":"b665b737f09d31bcfb00b4e2f238a09798fd4d4c75b6c537d3bd9e25817a42df","receipt":{"algorithm":"ed25519","builder_version":"pith-number-builder-2026-05-17-v1","canonical_sha256":"b665b737f09d31bcfb00b4e2f238a09798fd4d4c75b6c537d3bd9e25817a42df","first_computed_at":"2026-07-05T09:25:58.162749Z","key_id":"pith-v1-2026-05","kind":"pith_receipt","last_reissued_at":"2026-07-05T09:25:58.162749Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","receipt_version":"0.3","signature_b64":"hyxybfO847D/LEHV4ss/xUqrAiCz3AvV6V1rzu2nRI7jTZeCYZTGMZeFtkfP2taSJiRKMkrdYDsuI7myUOiyBA==","signature_status":"signed_v1","signed_at":"2026-07-05T09:25:58.163221Z","signed_message":"canonical_sha256_bytes"},"source_id":"2410.19545","source_kind":"arxiv","source_version":1}}},"equivocations":[],"invalid_events":[],"applied_event_ids":["sha256:55fef38308034b26af37382ff0b5ad0c6fd15ae9c0d7a3e0cdca955e9f309be2","sha256:61ead6a4aefbdec9a2f8e6c1f8d53b9284cce8e7d972dd4339449113b3b62712"],"state_sha256":"195d62ed45f17a8c8f7be354b187c16100b62da9d04dadd37b73f893b283d6c1"},"bundle_signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"Vcbc3jGcrCaONquJgmE8hlMFQNNbc4WfrHWquuffKTOf21jYcKDEPSxxEjbDo5GBRxSzDWD/GarPKKAjlRTjAg==","signed_message":"bundle_sha256_bytes","signed_at":"2026-08-06T15:51:20.017987Z","bundle_sha256":"f72d89afaeab631cd53aa489ed3970536f10ca761fac0ef86cb57e80653ee2e7"}}