{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2017:XSEJTFYYK6QUQP2GVXKXMPVN6S","short_pith_number":"pith:XSEJTFYY","schema_version":"1.0","canonical_sha256":"bc8899971857a1483f46add5763eadf4a74e90bc7f7c41f7cbbc96ec9f7efdd1","source":{"kind":"arxiv","id":"1705.06832","version":1},"attestation_state":"computed","paper":{"title":"Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared photonic applications","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Alban Gassenq, Alexei Chelnokov, Denis Rouchon, Jean-Michel Hartmann, Johan Rothman, Julie Widiez, Kevin Guilloy, Nicolas Pauc, Vincent Calvo, Vincent Reboud","submitted_at":"2017-05-18T23:47:43Z","abstract_excerpt":"Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice mismatch. In this work, we have developed a process based on Ge micro-bridge strain redistribution intentionally landed to the Si substrate. Traction arms can be then partially etched to keep only localized strained-Ge micro-blocks. Large tunable uniaxial stresses up to 4.2% strain were demonstrated bonded on Si. Our approach allows to envision integrated straine"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1705.06832","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2017-05-18T23:47:43Z","cross_cats_sorted":[],"title_canon_sha256":"b4384f6133a10b2d089362faebf85d917d62400363ebf2322e9b1ea282d050d1","abstract_canon_sha256":"20a4c1fd0224ad0db5fe40d609d27326d2a149dfca0f277bff60c0d137348be4"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T00:44:11.194389Z","signature_b64":"7FF2+Nw/Y2FoEeGi+gsnkDPwNBhx0zW3hCfyHz9l7C/pNRPVJTH+vA1oeFcnTWps6WE7qZVOoTANE5p9+FXyDQ==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"bc8899971857a1483f46add5763eadf4a74e90bc7f7c41f7cbbc96ec9f7efdd1","last_reissued_at":"2026-05-18T00:44:11.193893Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T00:44:11.193893Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared photonic applications","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Alban Gassenq, Alexei Chelnokov, Denis Rouchon, Jean-Michel Hartmann, Johan Rothman, Julie Widiez, Kevin Guilloy, Nicolas Pauc, Vincent Calvo, Vincent Reboud","submitted_at":"2017-05-18T23:47:43Z","abstract_excerpt":"Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice mismatch. In this work, we have developed a process based on Ge micro-bridge strain redistribution intentionally landed to the Si substrate. Traction arms can be then partially etched to keep only localized strained-Ge micro-blocks. Large tunable uniaxial stresses up to 4.2% strain were demonstrated bonded on Si. Our approach allows to envision integrated straine"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1705.06832","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1705.06832","created_at":"2026-05-18T00:44:11.193962+00:00"},{"alias_kind":"arxiv_version","alias_value":"1705.06832v1","created_at":"2026-05-18T00:44:11.193962+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1705.06832","created_at":"2026-05-18T00:44:11.193962+00:00"},{"alias_kind":"pith_short_12","alias_value":"XSEJTFYYK6QU","created_at":"2026-05-18T12:31:56.362134+00:00"},{"alias_kind":"pith_short_16","alias_value":"XSEJTFYYK6QUQP2G","created_at":"2026-05-18T12:31:56.362134+00:00"},{"alias_kind":"pith_short_8","alias_value":"XSEJTFYY","created_at":"2026-05-18T12:31:56.362134+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/XSEJTFYYK6QUQP2GVXKXMPVN6S","json":"https://pith.science/pith/XSEJTFYYK6QUQP2GVXKXMPVN6S.json","graph_json":"https://pith.science/api/pith-number/XSEJTFYYK6QUQP2GVXKXMPVN6S/graph.json","events_json":"https://pith.science/api/pith-number/XSEJTFYYK6QUQP2GVXKXMPVN6S/events.json","paper":"https://pith.science/paper/XSEJTFYY"},"agent_actions":{"view_html":"https://pith.science/pith/XSEJTFYYK6QUQP2GVXKXMPVN6S","download_json":"https://pith.science/pith/XSEJTFYYK6QUQP2GVXKXMPVN6S.json","view_paper":"https://pith.science/paper/XSEJTFYY","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1705.06832&json=true","fetch_graph":"https://pith.science/api/pith-number/XSEJTFYYK6QUQP2GVXKXMPVN6S/graph.json","fetch_events":"https://pith.science/api/pith-number/XSEJTFYYK6QUQP2GVXKXMPVN6S/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/XSEJTFYYK6QUQP2GVXKXMPVN6S/action/timestamp_anchor","attest_storage":"https://pith.science/pith/XSEJTFYYK6QUQP2GVXKXMPVN6S/action/storage_attestation","attest_author":"https://pith.science/pith/XSEJTFYYK6QUQP2GVXKXMPVN6S/action/author_attestation","sign_citation":"https://pith.science/pith/XSEJTFYYK6QUQP2GVXKXMPVN6S/action/citation_signature","submit_replication":"https://pith.science/pith/XSEJTFYYK6QUQP2GVXKXMPVN6S/action/replication_record"}},"created_at":"2026-05-18T00:44:11.193962+00:00","updated_at":"2026-05-18T00:44:11.193962+00:00"}