{"bundle_type":"pith_open_graph_bundle","bundle_version":"1.0","pith_number":"pith:2026:XXBJQYIUTJ7HP5CTAQAASQBWY2","short_pith_number":"pith:XXBJQYIU","canonical_record":{"source":{"id":"2605.14329","kind":"arxiv","version":1},"metadata":{"license":"http://creativecommons.org/licenses/by-nc-nd/4.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2026-05-14T03:46:52Z","cross_cats_sorted":[],"title_canon_sha256":"003c642cbd9dfca365300e0b1802e281e6f6390179b35cf381155b9befc0a13a","abstract_canon_sha256":"725c2f60ad5d1a7f8adb90d965fad6ee01e0c4a3422331602bdc051fb35168c9"},"schema_version":"1.0"},"canonical_sha256":"bdc29861149a7e77f4530400094036c6891364f38574726799fa38318a09e43f","source":{"kind":"arxiv","id":"2605.14329","version":1},"source_aliases":[{"alias_kind":"arxiv","alias_value":"2605.14329","created_at":"2026-05-17T23:39:08Z"},{"alias_kind":"arxiv_version","alias_value":"2605.14329v1","created_at":"2026-05-17T23:39:08Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2605.14329","created_at":"2026-05-17T23:39:08Z"},{"alias_kind":"pith_short_12","alias_value":"XXBJQYIUTJ7H","created_at":"2026-05-18T12:33:37Z"},{"alias_kind":"pith_short_16","alias_value":"XXBJQYIUTJ7HP5CT","created_at":"2026-05-18T12:33:37Z"},{"alias_kind":"pith_short_8","alias_value":"XXBJQYIU","created_at":"2026-05-18T12:33:37Z"}],"events":[{"event_type":"record_created","subject_pith_number":"pith:2026:XXBJQYIUTJ7HP5CTAQAASQBWY2","target":"record","payload":{"canonical_record":{"source":{"id":"2605.14329","kind":"arxiv","version":1},"metadata":{"license":"http://creativecommons.org/licenses/by-nc-nd/4.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2026-05-14T03:46:52Z","cross_cats_sorted":[],"title_canon_sha256":"003c642cbd9dfca365300e0b1802e281e6f6390179b35cf381155b9befc0a13a","abstract_canon_sha256":"725c2f60ad5d1a7f8adb90d965fad6ee01e0c4a3422331602bdc051fb35168c9"},"schema_version":"1.0"},"canonical_sha256":"bdc29861149a7e77f4530400094036c6891364f38574726799fa38318a09e43f","receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-17T23:39:08.310083Z","signature_b64":"UZRF9JXuojb8sd/ccC/MJ2cjTMIa9ceT623QiqIWxALAVY27d9JTiBgc603gJjoGUEXKDxsxOHSUPdhqH9RmBw==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"bdc29861149a7e77f4530400094036c6891364f38574726799fa38318a09e43f","last_reissued_at":"2026-05-17T23:39:08.309490Z","signature_status":"signed_v1","first_computed_at":"2026-05-17T23:39:08.309490Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"source_kind":"arxiv","source_id":"2605.14329","source_version":1,"attestation_state":"computed"},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-05-17T23:39:08Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"tT3t1qFGcGLA1YHoxAaIwOl9UO69TFBSWwFuGStg7rF0Jwoqq32BNWvW94/FyifzTXV55c1NlYWLGRYXNibWAA==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-06-04T02:36:47.081229Z"},"content_sha256":"e82cd773a4881d430c7623301a72eead0a8334c8e7d70f55c45c1113234ae11e","schema_version":"1.0","event_id":"sha256:e82cd773a4881d430c7623301a72eead0a8334c8e7d70f55c45c1113234ae11e"},{"event_type":"graph_snapshot","subject_pith_number":"pith:2026:XXBJQYIUTJ7HP5CTAQAASQBWY2","target":"graph","payload":{"graph_snapshot":{"paper":{"title":"Depletion-mode N-polar AlN-based high electron mobility transistors with improved on/off ratios","license":"http://creativecommons.org/licenses/by-nc-nd/4.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Itsuki Furuhashi, Ke Wei, Markus Pristovsek, Sheng Zhang, Xinhua Wang, Xinyu Liu, Xu Yang","submitted_at":"2026-05-14T03:46:52Z","abstract_excerpt":"We report N-polar AlN-based high-electron mobility transistors (HEMTs) with a GaN channel thickness of 5.2 nm on N-polar AlN on sapphire. The threshold voltage is around -2.4 to -3.0 V with saturation currents over 240 mA/mm and on/off ratios as high as 10,000, much higher than previously reported N-polar AlN-based HEMTs. The high on/off ratio is attributed to the use of an abrupt AlN/GaN heterostructure with a dedicated AlN transition layer, together with improved gate leakage. The high frequency properties as well as the on-resistance of ~20 Ohm mm are all limited by the 2000 Ohm/square shee"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2605.14329","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"verdict_id":null},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-05-17T23:39:08Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"S2wYaTh0WpRFSpwE6ePi4e7AIWkM/AWej+Ne208ACZnW6Obp9lCsVY6Fck4uaNdgHYqnHd+D+Ct+FRHw5qA2Dw==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-06-04T02:36:47.081581Z"},"content_sha256":"b450a545a285b9f964c3bd71bbb6867a6cec201d0c43ac10e8179e7bac90c2bb","schema_version":"1.0","event_id":"sha256:b450a545a285b9f964c3bd71bbb6867a6cec201d0c43ac10e8179e7bac90c2bb"}],"timestamp_proofs":[],"mirror_hints":[{"mirror_type":"https","name":"Pith Resolver","base_url":"https://pith.science","bundle_url":"https://pith.science/pith/XXBJQYIUTJ7HP5CTAQAASQBWY2/bundle.json","state_url":"https://pith.science/pith/XXBJQYIUTJ7HP5CTAQAASQBWY2/state.json","well_known_bundle_url":"https://pith.science/.well-known/pith/XXBJQYIUTJ7HP5CTAQAASQBWY2/bundle.json","status":"primary"}],"public_keys":[{"key_id":"pith-v1-2026-05","algorithm":"ed25519","format":"raw","public_key_b64":"stVStoiQhXFxp4s2pdzPNoqVNBMojDU/fJ2db5S3CbM=","public_key_hex":"b2d552b68890857171a78b36a5dccf368a953413288c353f7c9d9d6f94b709b3","fingerprint_sha256_b32_first128bits":"RVFV5Z2OI2J3ZUO7ERDEBCYNKS","fingerprint_sha256_hex":"8d4b5ee74e4693bcd1df2446408b0d54","rotates_at":null,"url":"https://pith.science/pith-signing-key.json","notes":"Pith uses this Ed25519 key to sign canonical record SHA-256 digests. Verify with: ed25519_verify(public_key, message=canonical_sha256_bytes, signature=base64decode(signature_b64))."}],"merge_version":"pith-open-graph-merge-v1","built_at":"2026-06-04T02:36:47Z","links":{"resolver":"https://pith.science/pith/XXBJQYIUTJ7HP5CTAQAASQBWY2","bundle":"https://pith.science/pith/XXBJQYIUTJ7HP5CTAQAASQBWY2/bundle.json","state":"https://pith.science/pith/XXBJQYIUTJ7HP5CTAQAASQBWY2/state.json","well_known_bundle":"https://pith.science/.well-known/pith/XXBJQYIUTJ7HP5CTAQAASQBWY2/bundle.json"},"state":{"state_type":"pith_open_graph_state","state_version":"1.0","pith_number":"pith:2026:XXBJQYIUTJ7HP5CTAQAASQBWY2","merge_version":"pith-open-graph-merge-v1","event_count":2,"valid_event_count":2,"invalid_event_count":0,"equivocation_count":0,"current":{"canonical_record":{"metadata":{"abstract_canon_sha256":"725c2f60ad5d1a7f8adb90d965fad6ee01e0c4a3422331602bdc051fb35168c9","cross_cats_sorted":[],"license":"http://creativecommons.org/licenses/by-nc-nd/4.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2026-05-14T03:46:52Z","title_canon_sha256":"003c642cbd9dfca365300e0b1802e281e6f6390179b35cf381155b9befc0a13a"},"schema_version":"1.0","source":{"id":"2605.14329","kind":"arxiv","version":1}},"source_aliases":[{"alias_kind":"arxiv","alias_value":"2605.14329","created_at":"2026-05-17T23:39:08Z"},{"alias_kind":"arxiv_version","alias_value":"2605.14329v1","created_at":"2026-05-17T23:39:08Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2605.14329","created_at":"2026-05-17T23:39:08Z"},{"alias_kind":"pith_short_12","alias_value":"XXBJQYIUTJ7H","created_at":"2026-05-18T12:33:37Z"},{"alias_kind":"pith_short_16","alias_value":"XXBJQYIUTJ7HP5CT","created_at":"2026-05-18T12:33:37Z"},{"alias_kind":"pith_short_8","alias_value":"XXBJQYIU","created_at":"2026-05-18T12:33:37Z"}],"graph_snapshots":[{"event_id":"sha256:b450a545a285b9f964c3bd71bbb6867a6cec201d0c43ac10e8179e7bac90c2bb","target":"graph","created_at":"2026-05-17T23:39:08Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"graph_snapshot":{"author_claims":{"count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","strong_count":0},"builder_version":"pith-number-builder-2026-05-17-v1","claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"paper":{"abstract_excerpt":"We report N-polar AlN-based high-electron mobility transistors (HEMTs) with a GaN channel thickness of 5.2 nm on N-polar AlN on sapphire. The threshold voltage is around -2.4 to -3.0 V with saturation currents over 240 mA/mm and on/off ratios as high as 10,000, much higher than previously reported N-polar AlN-based HEMTs. The high on/off ratio is attributed to the use of an abrupt AlN/GaN heterostructure with a dedicated AlN transition layer, together with improved gate leakage. The high frequency properties as well as the on-resistance of ~20 Ohm mm are all limited by the 2000 Ohm/square shee","authors_text":"Itsuki Furuhashi, Ke Wei, Markus Pristovsek, Sheng Zhang, Xinhua Wang, Xinyu Liu, Xu Yang","cross_cats":[],"headline":"","license":"http://creativecommons.org/licenses/by-nc-nd/4.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2026-05-14T03:46:52Z","title":"Depletion-mode N-polar AlN-based high electron mobility transistors with improved on/off ratios"},"references":{"count":0,"internal_anchors":0,"resolved_work":0,"sample":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2605.14329","kind":"arxiv","version":1},"verdict":{"created_at":null,"id":null,"model_set":{},"one_line_summary":"","pipeline_version":null,"pith_extraction_headline":"","strongest_claim":"","weakest_assumption":""}},"verdict_id":null}}],"author_attestations":[],"timestamp_anchors":[],"storage_attestations":[],"citation_signatures":[],"replication_records":[],"corrections":[],"mirror_hints":[],"record_created":{"event_id":"sha256:e82cd773a4881d430c7623301a72eead0a8334c8e7d70f55c45c1113234ae11e","target":"record","created_at":"2026-05-17T23:39:08Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"attestation_state":"computed","canonical_record":{"metadata":{"abstract_canon_sha256":"725c2f60ad5d1a7f8adb90d965fad6ee01e0c4a3422331602bdc051fb35168c9","cross_cats_sorted":[],"license":"http://creativecommons.org/licenses/by-nc-nd/4.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2026-05-14T03:46:52Z","title_canon_sha256":"003c642cbd9dfca365300e0b1802e281e6f6390179b35cf381155b9befc0a13a"},"schema_version":"1.0","source":{"id":"2605.14329","kind":"arxiv","version":1}},"canonical_sha256":"bdc29861149a7e77f4530400094036c6891364f38574726799fa38318a09e43f","receipt":{"algorithm":"ed25519","builder_version":"pith-number-builder-2026-05-17-v1","canonical_sha256":"bdc29861149a7e77f4530400094036c6891364f38574726799fa38318a09e43f","first_computed_at":"2026-05-17T23:39:08.309490Z","key_id":"pith-v1-2026-05","kind":"pith_receipt","last_reissued_at":"2026-05-17T23:39:08.309490Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","receipt_version":"0.3","signature_b64":"UZRF9JXuojb8sd/ccC/MJ2cjTMIa9ceT623QiqIWxALAVY27d9JTiBgc603gJjoGUEXKDxsxOHSUPdhqH9RmBw==","signature_status":"signed_v1","signed_at":"2026-05-17T23:39:08.310083Z","signed_message":"canonical_sha256_bytes"},"source_id":"2605.14329","source_kind":"arxiv","source_version":1}}},"equivocations":[],"invalid_events":[],"applied_event_ids":["sha256:e82cd773a4881d430c7623301a72eead0a8334c8e7d70f55c45c1113234ae11e","sha256:b450a545a285b9f964c3bd71bbb6867a6cec201d0c43ac10e8179e7bac90c2bb"],"state_sha256":"a48fb5064d5ae065f9e418cd1434a497609cce5ec6d6a4a360a5ec28cc915026"},"bundle_signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"jT3TevMThcPgq3DWGSobrhPeDJyVoufKfWDfMVHeD8VEyYpy0B1c+4Ada7hqQTOZCyxQVc8ubqclw69Sibi/Bg==","signed_message":"bundle_sha256_bytes","signed_at":"2026-06-04T02:36:47.085292Z","bundle_sha256":"dd3d02589c17f7bc4502f7986e522b9eaba32654e2896734d500488de28f58f8"}}