{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2014:Y7NOANGUKSSRVOVEWBV47OGN25","short_pith_number":"pith:Y7NOANGU","schema_version":"1.0","canonical_sha256":"c7dae034d454a51abaa4b06bcfb8cdd77f9ef7a93a5052d11ae43fd31e02320c","source":{"kind":"arxiv","id":"1408.2318","version":4},"attestation_state":"computed","paper":{"title":"Gating of high-mobility InAs metamorphic heterostructures","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A. P. McFadden, B. Shojaei, C. J. palmstr{\\o}m, J. Shabani","submitted_at":"2014-08-11T05:38:32Z","abstract_excerpt":"We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In$_{0.75}$Ga$_{0.25}$As often show signs of parallel conduction due to proximity of their surface Fermi level to the conduction band minimum. Here, we introduce a technique that can be used to estimate the density of this surface charge that involves cool-downs from room temperature under gate bias. We have been able to remove the parallel conduction under high positive bias, but achieving full depletion has proven difficult. We find t"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1408.2318","kind":"arxiv","version":4},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mes-hall","submitted_at":"2014-08-11T05:38:32Z","cross_cats_sorted":[],"title_canon_sha256":"4837c5e99461dd74917e50d9a8ad4de8574abd3eec9eec4c851191ea37db02a6","abstract_canon_sha256":"f34f0f68a3a14a8d10213ce85e38260ae469b3653d327c0cd0f771203da2697b"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T01:42:22.028252Z","signature_b64":"df3kUlahhkwYd4bB0s7zjmUZa61ME10LvUDw/RufjcE/LBlPZnJzN/8sYJwkxAGQV+fqzmr8iDIQ2DoadWxCAw==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"c7dae034d454a51abaa4b06bcfb8cdd77f9ef7a93a5052d11ae43fd31e02320c","last_reissued_at":"2026-05-18T01:42:22.027623Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T01:42:22.027623Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Gating of high-mobility InAs metamorphic heterostructures","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A. P. McFadden, B. Shojaei, C. J. palmstr{\\o}m, J. Shabani","submitted_at":"2014-08-11T05:38:32Z","abstract_excerpt":"We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In$_{0.75}$Ga$_{0.25}$As often show signs of parallel conduction due to proximity of their surface Fermi level to the conduction band minimum. Here, we introduce a technique that can be used to estimate the density of this surface charge that involves cool-downs from room temperature under gate bias. We have been able to remove the parallel conduction under high positive bias, but achieving full depletion has proven difficult. We find t"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1408.2318","kind":"arxiv","version":4},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1408.2318","created_at":"2026-05-18T01:42:22.027719+00:00"},{"alias_kind":"arxiv_version","alias_value":"1408.2318v4","created_at":"2026-05-18T01:42:22.027719+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1408.2318","created_at":"2026-05-18T01:42:22.027719+00:00"},{"alias_kind":"pith_short_12","alias_value":"Y7NOANGUKSSR","created_at":"2026-05-18T12:28:57.508820+00:00"},{"alias_kind":"pith_short_16","alias_value":"Y7NOANGUKSSRVOVE","created_at":"2026-05-18T12:28:57.508820+00:00"},{"alias_kind":"pith_short_8","alias_value":"Y7NOANGU","created_at":"2026-05-18T12:28:57.508820+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/Y7NOANGUKSSRVOVEWBV47OGN25","json":"https://pith.science/pith/Y7NOANGUKSSRVOVEWBV47OGN25.json","graph_json":"https://pith.science/api/pith-number/Y7NOANGUKSSRVOVEWBV47OGN25/graph.json","events_json":"https://pith.science/api/pith-number/Y7NOANGUKSSRVOVEWBV47OGN25/events.json","paper":"https://pith.science/paper/Y7NOANGU"},"agent_actions":{"view_html":"https://pith.science/pith/Y7NOANGUKSSRVOVEWBV47OGN25","download_json":"https://pith.science/pith/Y7NOANGUKSSRVOVEWBV47OGN25.json","view_paper":"https://pith.science/paper/Y7NOANGU","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1408.2318&json=true","fetch_graph":"https://pith.science/api/pith-number/Y7NOANGUKSSRVOVEWBV47OGN25/graph.json","fetch_events":"https://pith.science/api/pith-number/Y7NOANGUKSSRVOVEWBV47OGN25/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/Y7NOANGUKSSRVOVEWBV47OGN25/action/timestamp_anchor","attest_storage":"https://pith.science/pith/Y7NOANGUKSSRVOVEWBV47OGN25/action/storage_attestation","attest_author":"https://pith.science/pith/Y7NOANGUKSSRVOVEWBV47OGN25/action/author_attestation","sign_citation":"https://pith.science/pith/Y7NOANGUKSSRVOVEWBV47OGN25/action/citation_signature","submit_replication":"https://pith.science/pith/Y7NOANGUKSSRVOVEWBV47OGN25/action/replication_record"}},"created_at":"2026-05-18T01:42:22.027719+00:00","updated_at":"2026-05-18T01:42:22.027719+00:00"}