{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2016:YROQH6OLOX7WDAFFZQR436V7ZA","short_pith_number":"pith:YROQH6OL","schema_version":"1.0","canonical_sha256":"c45d03f9cb75ff6180a5cc23cdfabfc83bb81d145f3db675c1fb951f025803b4","source":{"kind":"arxiv","id":"1611.08395","version":1},"attestation_state":"computed","paper":{"title":"Robust topological insulator surface state in MBE grown (Bi_{1-x}Sb_x)_2Se_3","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"3, 4), Anhui, Applied Physics, China. (6) M.N. Miheev Institute of Metal Physics, C.-Maw Cheng (2), C. Wei Chong (1), Ekaterinburg, Hefei, Hefei University of Technology, H. Qiu (5), Hsinchu, J. C. A. Huang (1, K.-Ding Tsuei (2), Ministry of Science, National Cheng Kung University, Russia), Tainan, Taipei, Taiwan. (2) National Synchrotron Radiation Research Center, Taiwan (3) Advanced Optoelectronic Technology Center (AOTC), Taiwan. (4) Taiwan Consortium of Emergent Crystalline Materials (TCECM), Taiwan. (5) School of Electronic Science, Technology, V.V. Marchenkov (6) ((1) Department of Physics, W. Chuan Chen (2), Y. Hung Liu (1), Z. Li (5)","submitted_at":"2016-11-25T09:31:11Z","abstract_excerpt":"(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the existence of strong and robust topological surface states in this ternary system. Large tunability in transport properties by varying the Sb doping level has also been observed, where insulating phase could be achieved at x=0.5. Our results reveal the potential of this system for the study of tunable topological insulator and metal-insulator transition based device physics."},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1611.08395","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mes-hall","submitted_at":"2016-11-25T09:31:11Z","cross_cats_sorted":[],"title_canon_sha256":"e701428ac9812da098bdafe3522a5dd6d8756619d75c3498659401aa6022a978","abstract_canon_sha256":"fbae98d3de946a2fe08d4c0645600c628ddb45c42e383a8ec88999007f7bbe95"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T00:56:39.176292Z","signature_b64":"pDKAGD5jX1JATKlJ+BE0NlvRSi1XJPBw+uMp7Yc+k3gCeX2Xf/RKlwn6YYZ6lLR4PCgfc68CAamAjLXL7P3gDg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"c45d03f9cb75ff6180a5cc23cdfabfc83bb81d145f3db675c1fb951f025803b4","last_reissued_at":"2026-05-18T00:56:39.175694Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T00:56:39.175694Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Robust topological insulator surface state in MBE grown (Bi_{1-x}Sb_x)_2Se_3","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"3, 4), Anhui, Applied Physics, China. (6) M.N. Miheev Institute of Metal Physics, C.-Maw Cheng (2), C. Wei Chong (1), Ekaterinburg, Hefei, Hefei University of Technology, H. Qiu (5), Hsinchu, J. C. A. Huang (1, K.-Ding Tsuei (2), Ministry of Science, National Cheng Kung University, Russia), Tainan, Taipei, Taiwan. (2) National Synchrotron Radiation Research Center, Taiwan (3) Advanced Optoelectronic Technology Center (AOTC), Taiwan. (4) Taiwan Consortium of Emergent Crystalline Materials (TCECM), Taiwan. (5) School of Electronic Science, Technology, V.V. Marchenkov (6) ((1) Department of Physics, W. Chuan Chen (2), Y. Hung Liu (1), Z. Li (5)","submitted_at":"2016-11-25T09:31:11Z","abstract_excerpt":"(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the existence of strong and robust topological surface states in this ternary system. Large tunability in transport properties by varying the Sb doping level has also been observed, where insulating phase could be achieved at x=0.5. Our results reveal the potential of this system for the study of tunable topological insulator and metal-insulator transition based device physics."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1611.08395","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1611.08395","created_at":"2026-05-18T00:56:39.175783+00:00"},{"alias_kind":"arxiv_version","alias_value":"1611.08395v1","created_at":"2026-05-18T00:56:39.175783+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1611.08395","created_at":"2026-05-18T00:56:39.175783+00:00"},{"alias_kind":"pith_short_12","alias_value":"YROQH6OLOX7W","created_at":"2026-05-18T12:30:53.716459+00:00"},{"alias_kind":"pith_short_16","alias_value":"YROQH6OLOX7WDAFF","created_at":"2026-05-18T12:30:53.716459+00:00"},{"alias_kind":"pith_short_8","alias_value":"YROQH6OL","created_at":"2026-05-18T12:30:53.716459+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/YROQH6OLOX7WDAFFZQR436V7ZA","json":"https://pith.science/pith/YROQH6OLOX7WDAFFZQR436V7ZA.json","graph_json":"https://pith.science/api/pith-number/YROQH6OLOX7WDAFFZQR436V7ZA/graph.json","events_json":"https://pith.science/api/pith-number/YROQH6OLOX7WDAFFZQR436V7ZA/events.json","paper":"https://pith.science/paper/YROQH6OL"},"agent_actions":{"view_html":"https://pith.science/pith/YROQH6OLOX7WDAFFZQR436V7ZA","download_json":"https://pith.science/pith/YROQH6OLOX7WDAFFZQR436V7ZA.json","view_paper":"https://pith.science/paper/YROQH6OL","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1611.08395&json=true","fetch_graph":"https://pith.science/api/pith-number/YROQH6OLOX7WDAFFZQR436V7ZA/graph.json","fetch_events":"https://pith.science/api/pith-number/YROQH6OLOX7WDAFFZQR436V7ZA/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/YROQH6OLOX7WDAFFZQR436V7ZA/action/timestamp_anchor","attest_storage":"https://pith.science/pith/YROQH6OLOX7WDAFFZQR436V7ZA/action/storage_attestation","attest_author":"https://pith.science/pith/YROQH6OLOX7WDAFFZQR436V7ZA/action/author_attestation","sign_citation":"https://pith.science/pith/YROQH6OLOX7WDAFFZQR436V7ZA/action/citation_signature","submit_replication":"https://pith.science/pith/YROQH6OLOX7WDAFFZQR436V7ZA/action/replication_record"}},"created_at":"2026-05-18T00:56:39.175783+00:00","updated_at":"2026-05-18T00:56:39.175783+00:00"}